JP2013170117A5 - - Google Patents
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- Publication number
- JP2013170117A5 JP2013170117A5 JP2012037150A JP2012037150A JP2013170117A5 JP 2013170117 A5 JP2013170117 A5 JP 2013170117A5 JP 2012037150 A JP2012037150 A JP 2012037150A JP 2012037150 A JP2012037150 A JP 2012037150A JP 2013170117 A5 JP2013170117 A5 JP 2013170117A5
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon
- core wires
- frequency
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- -1 silane compound Chemical class 0.000 claims 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims 1
- 239000005052 trichlorosilane Substances 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012037150A JP5792657B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
| CN201380006296.1A CN104066679A (zh) | 2012-02-23 | 2013-02-19 | 多晶硅棒的制造方法 |
| MYPI2014702225A MY168538A (en) | 2012-02-23 | 2013-02-19 | Polycrystalline silicon rod manufacturing method |
| PCT/JP2013/000892 WO2013125207A1 (ja) | 2012-02-23 | 2013-02-19 | 多結晶シリコン棒の製造方法 |
| KR1020147019662A KR20140125354A (ko) | 2012-02-23 | 2013-02-19 | 다결정 실리콘 봉의 제조 방법 |
| CN201710051831.5A CN106976884B (zh) | 2012-02-23 | 2013-02-19 | 多晶硅棒的制造方法 |
| US14/380,249 US20150017349A1 (en) | 2012-02-23 | 2013-02-19 | Polycrystalline silicon rod manufacturing method |
| EP13751736.3A EP2818450B1 (en) | 2012-02-23 | 2013-02-19 | Polycrystalline silicon rod manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012037150A JP5792657B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013170117A JP2013170117A (ja) | 2013-09-02 |
| JP2013170117A5 true JP2013170117A5 (https=) | 2014-01-23 |
| JP5792657B2 JP5792657B2 (ja) | 2015-10-14 |
Family
ID=49005403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012037150A Active JP5792657B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150017349A1 (https=) |
| EP (1) | EP2818450B1 (https=) |
| JP (1) | JP5792657B2 (https=) |
| KR (1) | KR20140125354A (https=) |
| CN (2) | CN106976884B (https=) |
| MY (1) | MY168538A (https=) |
| WO (1) | WO2013125207A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6181620B2 (ja) * | 2014-09-04 | 2017-08-16 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
| CN106115712B (zh) * | 2016-06-28 | 2019-04-05 | 重庆大全泰来电气有限公司 | 一种多晶硅还原炉电源系统 |
| JP2018123033A (ja) * | 2017-02-02 | 2018-08-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
| JP6969917B2 (ja) * | 2017-07-12 | 2021-11-24 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
| CN110182813B (zh) * | 2019-06-12 | 2021-01-12 | 厦门佰事兴新材料科技有限公司 | 还原炉电极的维护方法 |
| JP7191780B2 (ja) | 2019-06-17 | 2022-12-19 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法 |
| EP3998230A4 (en) * | 2019-07-12 | 2024-10-02 | Tokuyama Corporation | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON |
| CN110683547B (zh) * | 2019-11-18 | 2023-12-26 | 新疆东方希望新能源有限公司 | 一种72对棒还原炉高压击穿系统及其方法 |
| CN114545865B (zh) * | 2020-11-25 | 2024-01-30 | 新特能源股份有限公司 | 一种多晶硅生长控制方法 |
| CN113922634A (zh) * | 2021-11-30 | 2022-01-11 | 重庆大全泰来电气有限公司 | 一种多对棒多晶硅还原炉电源系统 |
| CN114212794B (zh) * | 2021-12-30 | 2023-03-28 | 新疆大全新能源股份有限公司 | 制备电子级方硅芯的原生多晶硅棒的生产方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2727305A1 (de) * | 1977-06-16 | 1979-01-04 | Siemens Ag | Verfahren zum abscheiden von feinkristallinem silicium aus der gasphase an der oberflaeche eines erhitzten traegerkoerpers |
| DE2831816A1 (de) | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
| JPS6374909A (ja) | 1986-09-19 | 1988-04-05 | Shin Etsu Handotai Co Ltd | 大直径多結晶シリコン棒の製造方法 |
| JPH01305810A (ja) * | 1988-06-02 | 1989-12-11 | Osaka Titanium Co Ltd | 多結晶シリコンの通電加熱方法 |
| US6221155B1 (en) * | 1997-12-15 | 2001-04-24 | Advanced Silicon Materials, Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
| JP3621311B2 (ja) * | 1999-11-15 | 2005-02-16 | 住友チタニウム株式会社 | 多結晶シリコン製造プロセスにおけるシリコン直径及び温度の推定方法並びにこれを用いた操業管理方法 |
| US7521341B2 (en) * | 2005-11-09 | 2009-04-21 | Industrial Technology Research Institute | Method of direct deposition of polycrystalline silicon |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
-
2012
- 2012-02-23 JP JP2012037150A patent/JP5792657B2/ja active Active
-
2013
- 2013-02-19 WO PCT/JP2013/000892 patent/WO2013125207A1/ja not_active Ceased
- 2013-02-19 US US14/380,249 patent/US20150017349A1/en not_active Abandoned
- 2013-02-19 CN CN201710051831.5A patent/CN106976884B/zh active Active
- 2013-02-19 KR KR1020147019662A patent/KR20140125354A/ko not_active Withdrawn
- 2013-02-19 EP EP13751736.3A patent/EP2818450B1/en active Active
- 2013-02-19 MY MYPI2014702225A patent/MY168538A/en unknown
- 2013-02-19 CN CN201380006296.1A patent/CN104066679A/zh active Pending
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