JP2012017997A5 - - Google Patents

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Publication number
JP2012017997A5
JP2012017997A5 JP2010153828A JP2010153828A JP2012017997A5 JP 2012017997 A5 JP2012017997 A5 JP 2012017997A5 JP 2010153828 A JP2010153828 A JP 2010153828A JP 2010153828 A JP2010153828 A JP 2010153828A JP 2012017997 A5 JP2012017997 A5 JP 2012017997A5
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JP
Japan
Prior art keywords
polycrystalline silicon
silicon rod
producing
peak frequency
frequency
Prior art date
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Application number
JP2010153828A
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English (en)
Japanese (ja)
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JP2012017997A (ja
JP5238762B2 (ja
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Publication date
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Priority claimed from JP2010153828A external-priority patent/JP5238762B2/ja
Priority to JP2010153828A priority Critical patent/JP5238762B2/ja
Priority to EP11803307.5A priority patent/EP2594933A4/en
Priority to AU2011275287A priority patent/AU2011275287B2/en
Priority to CN201180033481.0A priority patent/CN102971624B/zh
Priority to PCT/JP2011/003800 priority patent/WO2012004968A1/ja
Priority to US13/808,404 priority patent/US9006002B2/en
Publication of JP2012017997A publication Critical patent/JP2012017997A/ja
Publication of JP2012017997A5 publication Critical patent/JP2012017997A5/ja
Publication of JP5238762B2 publication Critical patent/JP5238762B2/ja
Application granted granted Critical
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JP2010153828A 2010-07-06 2010-07-06 多結晶シリコン棒および多結晶シリコン棒の製造方法 Active JP5238762B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010153828A JP5238762B2 (ja) 2010-07-06 2010-07-06 多結晶シリコン棒および多結晶シリコン棒の製造方法
PCT/JP2011/003800 WO2012004968A1 (ja) 2010-07-06 2011-07-04 多結晶シリコン棒および多結晶シリコン棒の製造方法
AU2011275287A AU2011275287B2 (en) 2010-07-06 2011-07-04 Polycrystalline silicon rod and production method for polycrystalline silicon rod
CN201180033481.0A CN102971624B (zh) 2010-07-06 2011-07-04 多晶硅棒以及多晶硅棒的制造方法
EP11803307.5A EP2594933A4 (en) 2010-07-06 2011-07-04 Polycrystalline silicon rod and production method for polycrystalline silicon rod
US13/808,404 US9006002B2 (en) 2010-07-06 2011-07-04 Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rod

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010153828A JP5238762B2 (ja) 2010-07-06 2010-07-06 多結晶シリコン棒および多結晶シリコン棒の製造方法

Publications (3)

Publication Number Publication Date
JP2012017997A JP2012017997A (ja) 2012-01-26
JP2012017997A5 true JP2012017997A5 (https=) 2012-03-08
JP5238762B2 JP5238762B2 (ja) 2013-07-17

Family

ID=45440960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010153828A Active JP5238762B2 (ja) 2010-07-06 2010-07-06 多結晶シリコン棒および多結晶シリコン棒の製造方法

Country Status (6)

Country Link
US (1) US9006002B2 (https=)
EP (1) EP2594933A4 (https=)
JP (1) JP5238762B2 (https=)
CN (1) CN102971624B (https=)
AU (1) AU2011275287B2 (https=)
WO (1) WO2012004968A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5828795B2 (ja) 2012-04-04 2015-12-09 信越化学工業株式会社 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法
JP2014001096A (ja) 2012-06-18 2014-01-09 Shin Etsu Chem Co Ltd 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
JP5868286B2 (ja) * 2012-08-10 2016-02-24 信越化学工業株式会社 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法
DE102013207251A1 (de) * 2013-04-22 2014-10-23 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
JP6181620B2 (ja) 2014-09-04 2017-08-16 信越化学工業株式会社 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊
CN108168868A (zh) * 2017-12-29 2018-06-15 绍兴文理学院 一种检测型钢构件自振频率的方法
CN108225955B (zh) * 2017-12-30 2024-01-12 洛阳阿特斯光伏科技有限公司 一种硅棒的硬度评估方法
CN108732307A (zh) * 2018-05-04 2018-11-02 扬州连城金晖金刚线切片研发有限公司 一种金刚线切片的单、多晶硅棒检验方法
US11655541B2 (en) 2018-12-17 2023-05-23 Wacker Chemie Ag Process for producing polycrystalline silicon

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062229A (en) * 1977-02-22 1977-12-13 General Electric Company Method of testing the integrity of installed rock bolts
JP2001021543A (ja) 1999-07-06 2001-01-26 Sumitomo Sitix Of Amagasaki Inc シリコン塊の探傷方法
JP2001235451A (ja) * 2000-02-25 2001-08-31 Mitsubishi Electric Corp 試料の欠陥測定装置及び方法
JP2001294416A (ja) * 2000-04-07 2001-10-23 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの製造装置
JP4768927B2 (ja) 2001-05-11 2011-09-07 新日本製鐵株式会社 打音検査物の非破壊検査方法、及び品質管理方法
JP2004149324A (ja) * 2002-10-28 2004-05-27 Sumitomo Mitsubishi Silicon Corp 多結晶シリコンロッド及びその製造方法、並びにそのロッドの製造に使用されるシリコン芯材
US6941811B2 (en) * 2003-08-04 2005-09-13 Nan Ya Technology Corporation Method and apparatus for detecting wafer flaw
JP4575886B2 (ja) 2006-02-14 2010-11-04 シャープ株式会社 多結晶半導体ウエハの割れ検査装置および割れ検査方法
DE102006040486A1 (de) 2006-08-30 2008-03-13 Wacker Chemie Ag Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium

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