KR20140125354A - 다결정 실리콘 봉의 제조 방법 - Google Patents
다결정 실리콘 봉의 제조 방법 Download PDFInfo
- Publication number
- KR20140125354A KR20140125354A KR1020147019662A KR20147019662A KR20140125354A KR 20140125354 A KR20140125354 A KR 20140125354A KR 1020147019662 A KR1020147019662 A KR 1020147019662A KR 20147019662 A KR20147019662 A KR 20147019662A KR 20140125354 A KR20140125354 A KR 20140125354A
- Authority
- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- current
- frequency
- silicon core
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 266
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 199
- 229920005591 polysilicon Polymers 0.000 claims abstract description 76
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 36
- 239000002994 raw material Substances 0.000 claims description 31
- 230000008021 deposition Effects 0.000 claims description 23
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 21
- 239000005052 trichlorosilane Substances 0.000 claims description 21
- -1 silane compound Chemical class 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 60
- 238000006243 chemical reaction Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 22
- 239000002184 metal Substances 0.000 description 21
- 238000000151 deposition Methods 0.000 description 20
- 238000001556 precipitation Methods 0.000 description 19
- 230000002500 effect on skin Effects 0.000 description 13
- 230000035515 penetration Effects 0.000 description 12
- 238000001816 cooling Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 239000005046 Chlorosilane Substances 0.000 description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 6
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 5
- 241000482268 Zea mays subsp. mays Species 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 241000479656 Bessa Species 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-037150 | 2012-02-23 | ||
| JP2012037150A JP5792657B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
| PCT/JP2013/000892 WO2013125207A1 (ja) | 2012-02-23 | 2013-02-19 | 多結晶シリコン棒の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140125354A true KR20140125354A (ko) | 2014-10-28 |
Family
ID=49005403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147019662A Withdrawn KR20140125354A (ko) | 2012-02-23 | 2013-02-19 | 다결정 실리콘 봉의 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150017349A1 (https=) |
| EP (1) | EP2818450B1 (https=) |
| JP (1) | JP5792657B2 (https=) |
| KR (1) | KR20140125354A (https=) |
| CN (2) | CN106976884B (https=) |
| MY (1) | MY168538A (https=) |
| WO (1) | WO2013125207A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200144062A (ko) * | 2019-06-17 | 2020-12-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 다결정 실리콘 로드의 제조 방법 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6181620B2 (ja) * | 2014-09-04 | 2017-08-16 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
| CN106115712B (zh) * | 2016-06-28 | 2019-04-05 | 重庆大全泰来电气有限公司 | 一种多晶硅还原炉电源系统 |
| JP2018123033A (ja) * | 2017-02-02 | 2018-08-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
| JP6969917B2 (ja) * | 2017-07-12 | 2021-11-24 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
| CN110182813B (zh) * | 2019-06-12 | 2021-01-12 | 厦门佰事兴新材料科技有限公司 | 还原炉电极的维护方法 |
| EP3998230A4 (en) * | 2019-07-12 | 2024-10-02 | Tokuyama Corporation | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON |
| CN110683547B (zh) * | 2019-11-18 | 2023-12-26 | 新疆东方希望新能源有限公司 | 一种72对棒还原炉高压击穿系统及其方法 |
| CN114545865B (zh) * | 2020-11-25 | 2024-01-30 | 新特能源股份有限公司 | 一种多晶硅生长控制方法 |
| CN113922634A (zh) * | 2021-11-30 | 2022-01-11 | 重庆大全泰来电气有限公司 | 一种多对棒多晶硅还原炉电源系统 |
| CN114212794B (zh) * | 2021-12-30 | 2023-03-28 | 新疆大全新能源股份有限公司 | 制备电子级方硅芯的原生多晶硅棒的生产方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2727305A1 (de) * | 1977-06-16 | 1979-01-04 | Siemens Ag | Verfahren zum abscheiden von feinkristallinem silicium aus der gasphase an der oberflaeche eines erhitzten traegerkoerpers |
| DE2831816A1 (de) | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
| JPS6374909A (ja) | 1986-09-19 | 1988-04-05 | Shin Etsu Handotai Co Ltd | 大直径多結晶シリコン棒の製造方法 |
| JPH01305810A (ja) * | 1988-06-02 | 1989-12-11 | Osaka Titanium Co Ltd | 多結晶シリコンの通電加熱方法 |
| US6221155B1 (en) * | 1997-12-15 | 2001-04-24 | Advanced Silicon Materials, Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
| JP3621311B2 (ja) * | 1999-11-15 | 2005-02-16 | 住友チタニウム株式会社 | 多結晶シリコン製造プロセスにおけるシリコン直径及び温度の推定方法並びにこれを用いた操業管理方法 |
| US7521341B2 (en) * | 2005-11-09 | 2009-04-21 | Industrial Technology Research Institute | Method of direct deposition of polycrystalline silicon |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
-
2012
- 2012-02-23 JP JP2012037150A patent/JP5792657B2/ja active Active
-
2013
- 2013-02-19 WO PCT/JP2013/000892 patent/WO2013125207A1/ja not_active Ceased
- 2013-02-19 US US14/380,249 patent/US20150017349A1/en not_active Abandoned
- 2013-02-19 CN CN201710051831.5A patent/CN106976884B/zh active Active
- 2013-02-19 KR KR1020147019662A patent/KR20140125354A/ko not_active Withdrawn
- 2013-02-19 EP EP13751736.3A patent/EP2818450B1/en active Active
- 2013-02-19 MY MYPI2014702225A patent/MY168538A/en unknown
- 2013-02-19 CN CN201380006296.1A patent/CN104066679A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200144062A (ko) * | 2019-06-17 | 2020-12-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 다결정 실리콘 로드의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106976884B (zh) | 2019-09-27 |
| WO2013125207A1 (ja) | 2013-08-29 |
| JP5792657B2 (ja) | 2015-10-14 |
| JP2013170117A (ja) | 2013-09-02 |
| EP2818450A4 (en) | 2015-12-02 |
| CN106976884A (zh) | 2017-07-25 |
| EP2818450A1 (en) | 2014-12-31 |
| MY168538A (en) | 2018-11-12 |
| CN104066679A (zh) | 2014-09-24 |
| EP2818450B1 (en) | 2023-11-08 |
| US20150017349A1 (en) | 2015-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20140715 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |