JP2013145799A - 半導体レーザ素子、及び、半導体レーザ素子の製造方法 - Google Patents

半導体レーザ素子、及び、半導体レーザ素子の製造方法 Download PDF

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Publication number
JP2013145799A
JP2013145799A JP2012005367A JP2012005367A JP2013145799A JP 2013145799 A JP2013145799 A JP 2013145799A JP 2012005367 A JP2012005367 A JP 2012005367A JP 2012005367 A JP2012005367 A JP 2012005367A JP 2013145799 A JP2013145799 A JP 2013145799A
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degrees
semipolar
plane
semiconductor
axis
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JP2012005367A
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English (en)
Japanese (ja)
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JP2013145799A5 (https=
Inventor
Tatsufumi Hamaguchi
達史 濱口
Shinpei Takagi
慎平 高木
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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Priority to JP2012005367A priority Critical patent/JP2013145799A/ja
Priority to CN2013100038771A priority patent/CN103208740A/zh
Priority to US13/735,746 priority patent/US20130182734A1/en
Publication of JP2013145799A publication Critical patent/JP2013145799A/ja
Publication of JP2013145799A5 publication Critical patent/JP2013145799A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2012005367A 2012-01-13 2012-01-13 半導体レーザ素子、及び、半導体レーザ素子の製造方法 Pending JP2013145799A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012005367A JP2013145799A (ja) 2012-01-13 2012-01-13 半導体レーザ素子、及び、半導体レーザ素子の製造方法
CN2013100038771A CN103208740A (zh) 2012-01-13 2013-01-06 激光二极管以及制造激光二极管的方法
US13/735,746 US20130182734A1 (en) 2012-01-13 2013-01-07 Laser diode and method of manufacturing laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012005367A JP2013145799A (ja) 2012-01-13 2012-01-13 半導体レーザ素子、及び、半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
JP2013145799A true JP2013145799A (ja) 2013-07-25
JP2013145799A5 JP2013145799A5 (https=) 2014-10-02

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JP2012005367A Pending JP2013145799A (ja) 2012-01-13 2012-01-13 半導体レーザ素子、及び、半導体レーザ素子の製造方法

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US (1) US20130182734A1 (https=)
JP (1) JP2013145799A (https=)
CN (1) CN103208740A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016113071A1 (de) * 2016-07-15 2018-01-18 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
CN108376731A (zh) * 2018-02-07 2018-08-07 赛富乐斯股份有限公司 发光装置及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264340A (ja) * 2002-03-11 2003-09-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム
JP2011003660A (ja) * 2009-06-17 2011-01-06 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP2011068503A (ja) * 2009-09-24 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体基板
JP2011138891A (ja) * 2009-12-28 2011-07-14 Nichia Corp 窒化物半導体素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010518626A (ja) * 2007-02-12 2010-05-27 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎダイオードレーザのためのレーザ棒配向の最適化
US8284810B1 (en) * 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US7933303B2 (en) * 2009-06-17 2011-04-26 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
KR101833379B1 (ko) * 2009-11-05 2018-02-28 더 리전츠 오브 더 유니버시티 오브 캘리포니아 에칭된 미러들을 구비하는 반극성 ｛20-21｝ ⅲ-족 질화물 레이저 다이오드들

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264340A (ja) * 2002-03-11 2003-09-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体マルチストライプレーザ及び光ファイバシステム
JP2011003660A (ja) * 2009-06-17 2011-01-06 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP2011068503A (ja) * 2009-09-24 2011-04-07 Sumitomo Electric Ind Ltd 窒化物半導体基板
JP2011138891A (ja) * 2009-12-28 2011-07-14 Nichia Corp 窒化物半導体素子

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US20130182734A1 (en) 2013-07-18
CN103208740A (zh) 2013-07-17

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