JP5234130B2 - 光半導体素子 - Google Patents
光半導体素子 Download PDFInfo
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- JP5234130B2 JP5234130B2 JP2011072540A JP2011072540A JP5234130B2 JP 5234130 B2 JP5234130 B2 JP 5234130B2 JP 2011072540 A JP2011072540 A JP 2011072540A JP 2011072540 A JP2011072540 A JP 2011072540A JP 5234130 B2 JP5234130 B2 JP 5234130B2
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- 239000004065 semiconductor Substances 0.000 title claims description 161
- 230000003287 optical effect Effects 0.000 title claims description 72
- 150000004767 nitrides Chemical class 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 32
- 230000010355 oscillation Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 356
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 80
- 238000005253 cladding Methods 0.000 description 58
- 239000013078 crystal Substances 0.000 description 48
- 238000004519 manufacturing process Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- -1 hydrogen ions Chemical class 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000003776 cleavage reaction Methods 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Description
図1は、本発明による光半導体素子の第1実施形態として、半導体レーザ素子1Aの外観を示す斜視図である。また、図2は、図1のII−II線に沿った半導体レーザ素子1Aの側断面図である。図1及び図2に示されるように、本実施形態の半導体レーザ素子1Aは、III族窒化物半導体基板としてのGaN基板10と、第1のIII族窒化物半導体積層部としてのレーザ構造部20と、第2のIII族窒化物半導体積層部としてのレーザ構造部30と、III族窒化物半導体薄膜としてのGaN薄膜40とを備える。
上記第1実施形態の変形例として、半導体レーザ素子1Aの他の製造方法について説明する。図10は、本変形例に係る半導体レーザ素子1Aの製造方法を示すフローチャートである。また、図11及び図12は、本変形例に係る半導体レーザ素子1Aの製造工程を示す断面図であり、半導体レーザ素子1Aの光導波方向に垂直な切断面を示している。
続いて、本発明による光半導体素子の第2実施形態について説明する。図13は、本実施形態の光半導体素子としての発光ダイオード(LED)1Bの平面図である。また、図14は、図13のXIV−XIV線に沿った発光ダイオード1Bの側断面図である。図13及び図14に示されるように、本実施形態の発光ダイオード1Bは、III族窒化物半導体基板としてのGaN基板10と、第1のIII族窒化物半導体積層部としてのLED構造部80と、第2のIII族窒化物半導体積層部としてのLED構造部90と、III族窒化物半導体薄膜としてのGaN薄膜40とを備える。なお、GaN基板10の構成については、既述した第1実施形態と同様なので、詳細な説明を省略する。
ここで、上述した接合層形成工程S1及びイオン注入工程S2に関する実施例について説明する。本実施例では、まず、GaN薄膜40の母材として、HVPE法により成長させた直径2インチ(5.08cm)、厚さ500μmのGaN単結晶インゴット60を準備した。このGaN単結晶インゴット60は、一方の主面が(0001)面(すなわちGa原子表面)であり、他方の主面が(000−1)面(すなわちN原子表面)であり、両主面が鏡面加工されたものである。
Claims (11)
- 主面が第1の面方位を有するIII族窒化物半導体基板と、
前記主面の第1の領域上に成長しており、第1の活性層を含む第1のIII族窒化物半導体積層部と、
前記主面の前記第1の領域とは異なる第2の領域に対し、III族窒化物半導体とは異なる材料から成る接合層を介して接合されており、表面が前記第1の面方位とは異なる第2の面方位を有するIII族窒化物半導体薄膜と、
前記III族窒化物半導体薄膜の前記表面上に成長しており、第2の活性層を含む第2のIII族窒化物半導体積層部と、
を備え、
前記第1及び第2の活性層は、Inを含む第1及び第2の井戸層をそれぞれ有し、
前記第1及び第2の井戸層の発光波長が互いに異なることを特徴とする、光半導体素子。 - 前記第1の井戸層のIn組成と、前記第2の井戸層のIn組成とが互いに異なることを特徴とする、請求項1に記載の光半導体素子。
- 第1のIII族窒化物半導体積層部が、前記第1の活性層に沿って設けられた第1の光ガイド層を更に含み、
第2のIII族窒化物半導体積層部が、前記第2の活性層に沿って設けられた第2の光ガイド層を更に含み、
前記第1及び第2の光ガイド層がInを含み、
前記第1及び第2の光ガイド層のIn組成が互いに異なる
ことを特徴とする、請求項1または2に記載の光半導体素子。 - 前記第1及び第2の井戸層のうち一方の発光波長が430nm以上480nm以下の範囲に含まれることを特徴とする、請求項1〜3のいずれか一項に記載の光半導体素子。
- 前記第1及び第2の井戸層のうち一方の発光波長が500nm以上550nm以下の範囲に含まれることを特徴とする、請求項1〜3のいずれか一項に記載の光半導体素子。
- 前記第1の井戸層の発光波長が500nm以上550nm以下の範囲に含まれ、前記第2の井戸層の発光波長が430nm以上480nm以下の範囲に含まれることを特徴とする、請求項1〜3のいずれか一項に記載の光半導体素子。
- 前記第1のIII族窒化物半導体積層部が、レーザ発振のための光導波路構造を有しており、
前記III族窒化物半導体基板の前記主面における法線ベクトルが、当該III族窒化物半導体のc軸に対して傾斜しており、前記III族窒化物半導体基板のc軸の傾斜方向が、前記第1のIII族窒化物半導体積層部の前記光導波路構造の長手方向と垂直である
ことを特徴とする、請求項1〜6のいずれか一項に記載の光半導体素子。 - 前記III族窒化物半導体基板の前記主面が、当該III族窒化物半導体の半極性面または無極性面を含むことを特徴とする、請求項1〜6のいずれか一項に記載の光半導体素子。
- 前記III族窒化物半導体基板の前記主面における法線ベクトルと、前記III族窒化物半導体基板のc軸との成す傾斜角が、10度以上80度以下、又は100度以上170度以下の範囲に含まれることを特徴とする、請求項8に記載の光半導体素子。
- 前記III族窒化物半導体基板の前記主面における法線ベクトルと、前記III族窒化物半導体基板のc軸との成す傾斜角が、63度以上80度以下、又は100度以上117度以下の範囲に含まれることを特徴とする、請求項9に記載の光半導体素子。
- 前記接合層が導電性を有する材料からなることを特徴とする、請求項1〜10のいずれか一項に記載の光半導体素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2011072540A JP5234130B2 (ja) | 2011-03-29 | 2011-03-29 | 光半導体素子 |
CN2012800158739A CN103460529A (zh) | 2011-03-29 | 2012-03-28 | 光半导体元件 |
PCT/JP2012/058174 WO2012133546A1 (ja) | 2011-03-29 | 2012-03-28 | 光半導体素子 |
TW101111146A TW201244311A (en) | 2011-03-29 | 2012-03-29 | Optical semiconductor element |
US13/434,230 US8445925B2 (en) | 2011-03-29 | 2012-03-29 | Semiconductor optical device |
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JP2011072540A JP5234130B2 (ja) | 2011-03-29 | 2011-03-29 | 光半導体素子 |
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JP5234130B2 true JP5234130B2 (ja) | 2013-07-10 |
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US (1) | US8445925B2 (ja) |
JP (1) | JP5234130B2 (ja) |
CN (1) | CN103460529A (ja) |
TW (1) | TW201244311A (ja) |
WO (1) | WO2012133546A1 (ja) |
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US9269858B2 (en) * | 2011-08-31 | 2016-02-23 | Micron Technology, Inc. | Engineered substrates for semiconductor devices and associated systems and methods |
CN104377549A (zh) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | 一种四波长镓氮基半导体激光芯片结构 |
CN104393488A (zh) * | 2014-12-11 | 2015-03-04 | 北京工业大学 | 一种三波长镓氮基半导体激光芯片结构 |
WO2017017928A1 (ja) * | 2015-07-30 | 2017-02-02 | パナソニック株式会社 | 窒化物半導体レーザ素子 |
WO2017160119A1 (ko) * | 2016-03-18 | 2017-09-21 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 표시장치 |
CN110574245A (zh) * | 2017-05-01 | 2019-12-13 | 松下知识产权经营株式会社 | 氮化物系发光装置 |
CN108832483A (zh) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | 一种脊形半导体激光二极管的制备方法 |
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