JP2013120851A - センサユニット及び固体撮像装置 - Google Patents
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- 239000007787 solid Substances 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000003384 imaging method Methods 0.000 claims description 133
- 230000005855 radiation Effects 0.000 claims description 25
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000002585 base Substances 0.000 description 127
- 230000004048 modification Effects 0.000 description 26
- 238000012986 modification Methods 0.000 description 26
- 239000011521 glass Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 18
- 239000000853 adhesive Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000013170 computed tomography imaging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
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Abstract
【解決手段】センサユニット2Aは、金属製のベース部材20Aと、固体撮像素子30と、アンプチップ40とを備える。ベース部材20Aは、第一載置面21a及び第二載置面21bとを有する。固体撮像素子30は、受光面32を有し、裏面33と第一載置面21aとが互いに対向するように第一載置面21a上に配置されている。アンプチップ40は、第二載置面21b上に配置された基板50上に実装されている。ベース部材20Aは、固体撮像素子30の側面と対向する側壁部25を更に有する。アンプチップ40と固体撮像素子30とは、ボンディングワイヤ92を介して互いに電気的に接続されている。アンプチップ40は、基板50のサーマルビア53を介してベース部材20Aと熱的に結合されている。
【選択図】図2
Description
続いて、上記実施形態の変形例について説明する。図10は、上記実施形態の第1変形例に係る固体撮像装置1Bの構成を示す断面図であって、上記実施形態の図2に相当する断面を示している。
続いて、上記実施形態の第2変形例について説明する。図11及び図12は、一変形例に係る固体撮像装置1Cの構成を示す断面図である。図11は上記実施形態の図2に相当する断面を示しており、図12は上記実施形態の図3に相当する断面を示している。また、図13は、固体撮像装置1Cが備えるベース部材20Cの全体形状を示す斜視図である。
図14〜図16は、上記実施形態の第3変形例として、ベース部材の様々な形状を示す斜視図である。図14に示されるベース部材20Dと第1実施形態のベース部材20Aとの相違点は、スリットの形状である。本変形例のベース部材20Dは、第1実施形態のスリット24に代えて、スリット(孔)71を有する。スリット71は、第一載置面21aと第二載置面21bとの間に形成されており、主面21から裏面22にわたってベース部材20Dを貫通している。本実施形態では、ベース部材20Dに一つのスリット71が形成されており、スリット71は、第一載置面21aと第二載置面21bとの境界に沿った方向(すなわちY軸方向)を長手方向として形成されており、該方向における第一載置面21aの幅と同等の長さを有する。
Claims (9)
- 主面及び裏面を有する金属製の部材であって、第一載置領域と、前記裏面を基準とする高さが前記第一載置領域よりも低い第二載置領域とが前記主面に形成されたベース部材と、
受光面と、該受光面の反対側に位置する裏面とを有し、該裏面と前記第一載置領域とが互いに対向するように前記第一載置領域上に配置された固体撮像素子と、
前記ベース部材の前記第二載置領域上に配置された配線基板上に実装され、前記固体撮像素子から出力される信号を増幅して出力する信号読出用半導体チップと
を備え、
前記ベース部材は、前記固体撮像素子の側面と対向する側壁部を更に有しており、
前記信号読出用半導体チップと前記固体撮像素子とは、ボンディングワイヤを介して互いに電気的に接続されており、
前記配線基板がサーマルビアを有しており、前記信号読出用半導体チップが前記サーマルビアを介して前記ベース部材と熱的に結合されていることを特徴とする、センサユニット。 - 前記ベース部材は、前記第一載置領域と前記第二載置領域との間に形成され、前記主面から前記裏面にわたって前記ベース部材を貫通する孔を更に有することを特徴とする、請求項1に記載のセンサユニット。
- 前記固体撮像素子上に配置され、放射線の入射強度に応じた強度の光を前記受光面へ出力するシンチレータを更に備えることを特徴とする、請求項1または2に記載のセンサユニット。
- 前記ベース部材は、前記第一載置領域を底面とし且つ前記側壁部を側面として形成された第一凹部と、前記第二載置領域を底面として形成された第二凹部とを有することを特徴とする、請求項3に記載のセンサユニット。
- 前記ベース部材の前記裏面と前記第二載置領域との間隔が前記第二凹部の深さよりも大きいことを特徴とする、請求項4に記載のセンサユニット。
- 前記固体撮像素子は、前記受光面への入射光の波長に対して透明な基板を有しており、前記固体撮像素子の側面と前記側壁部とが互いに接着されることにより前記固体撮像素子が前記ベース部材に固定されていることを特徴とする、請求項1〜5のいずれか一項に記載のセンサユニット。
- 前記固体撮像素子は、前記受光面への入射光の波長に対して透明な基板を有しており、
前記固体撮像素子の前記裏面上に遮光膜が設けられていることを特徴とする、請求項1〜5のいずれか一項に記載のセンサユニット。 - 請求項1〜7の何れか一項に記載のセンサユニットと、
前記ベース部材、前記固体撮像素子、及び前記信号読出用半導体チップを収容する筐体と、
前記筐体内において前記ベース部材の前記裏面を支持するとともに、前記ベース部材と前記筐体とを互いに熱的に結合する支持部材と
を備えることを特徴とする、固体撮像装置。 - 前記第二載置領域の裏側に相当する前記ベース部材の前記裏面内の領域において前記支持部材が占める面積割合が、前記第一載置領域の裏側に相当する前記ベース部材の前記裏面内の領域において前記支持部材が占める面積割合よりも大きいことを特徴とする、請求項8に記載の固体撮像装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011268166A JP6081697B2 (ja) | 2011-12-07 | 2011-12-07 | センサユニット及び固体撮像装置 |
CN201280060686.2A CN103999220B (zh) | 2011-12-07 | 2012-12-04 | 传感器单元以及固体摄像装置 |
EP12855813.7A EP2790219B1 (en) | 2011-12-07 | 2012-12-04 | Sensor unit and solid-state imaging device |
KR1020147005838A KR102105723B1 (ko) | 2011-12-07 | 2012-12-04 | 센서 유니트 및 고체 촬상 장치 |
PCT/JP2012/081391 WO2013084893A1 (ja) | 2011-12-07 | 2012-12-04 | センサユニット及び固体撮像装置 |
US14/362,643 US9478683B2 (en) | 2011-12-07 | 2012-12-04 | Sensor unit and solid-state imaging device |
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JP2011268166A JP6081697B2 (ja) | 2011-12-07 | 2011-12-07 | センサユニット及び固体撮像装置 |
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JP2013120851A true JP2013120851A (ja) | 2013-06-17 |
JP6081697B2 JP6081697B2 (ja) | 2017-02-15 |
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US (1) | US9478683B2 (ja) |
EP (1) | EP2790219B1 (ja) |
JP (1) | JP6081697B2 (ja) |
KR (1) | KR102105723B1 (ja) |
CN (1) | CN103999220B (ja) |
WO (1) | WO2013084893A1 (ja) |
Cited By (3)
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JP2016200542A (ja) * | 2015-04-13 | 2016-12-01 | キヤノン株式会社 | 放射線撮像装置及び放射線撮像システム |
JP2017068161A (ja) * | 2015-10-01 | 2017-04-06 | 日本軽金属株式会社 | X線撮影装置用筺体 |
JP2017138256A (ja) * | 2016-02-05 | 2017-08-10 | 富士電機株式会社 | 放射線検出装置 |
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US9478683B2 (en) | 2016-10-25 |
JP6081697B2 (ja) | 2017-02-15 |
US20140353515A1 (en) | 2014-12-04 |
WO2013084893A1 (ja) | 2013-06-13 |
EP2790219A1 (en) | 2014-10-15 |
KR20140107175A (ko) | 2014-09-04 |
EP2790219B1 (en) | 2018-06-27 |
CN103999220A (zh) | 2014-08-20 |
EP2790219A4 (en) | 2015-10-28 |
KR102105723B1 (ko) | 2020-04-28 |
CN103999220B (zh) | 2017-08-25 |
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