JP2013093482A5 - - Google Patents

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Publication number
JP2013093482A5
JP2013093482A5 JP2011235617A JP2011235617A JP2013093482A5 JP 2013093482 A5 JP2013093482 A5 JP 2013093482A5 JP 2011235617 A JP2011235617 A JP 2011235617A JP 2011235617 A JP2011235617 A JP 2011235617A JP 2013093482 A5 JP2013093482 A5 JP 2013093482A5
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JP
Japan
Prior art keywords
insulating layer
drift region
field plate
region
semiconductor device
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Pending
Application number
JP2011235617A
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English (en)
Japanese (ja)
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JP2013093482A (ja
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Priority to JP2011235617A priority Critical patent/JP2013093482A/ja
Priority claimed from JP2011235617A external-priority patent/JP2013093482A/ja
Publication of JP2013093482A publication Critical patent/JP2013093482A/ja
Publication of JP2013093482A5 publication Critical patent/JP2013093482A5/ja
Pending legal-status Critical Current

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JP2011235617A 2011-10-27 2011-10-27 半導体装置および半導体装置の製造方法 Pending JP2013093482A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011235617A JP2013093482A (ja) 2011-10-27 2011-10-27 半導体装置および半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011235617A JP2013093482A (ja) 2011-10-27 2011-10-27 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2013093482A JP2013093482A (ja) 2013-05-16
JP2013093482A5 true JP2013093482A5 (enrdf_load_stackoverflow) 2014-09-18

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JP2011235617A Pending JP2013093482A (ja) 2011-10-27 2011-10-27 半導体装置および半導体装置の製造方法

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JP (1) JP2013093482A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6270572B2 (ja) 2014-03-19 2018-01-31 株式会社東芝 半導体装置及びその製造方法
JP6230456B2 (ja) 2014-03-19 2017-11-15 株式会社東芝 半導体装置
JP2017054960A (ja) 2015-09-10 2017-03-16 株式会社東芝 半導体装置
JP2019087698A (ja) 2017-11-10 2019-06-06 株式会社日立製作所 半導体装置および半導体装置の製造方法
JP6973422B2 (ja) * 2019-01-21 2021-11-24 株式会社デンソー 半導体装置の製造方法
US11705516B2 (en) * 2021-01-08 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Polarization enhancement structure for enlarging memory window

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS61180483A (ja) * 1985-02-05 1986-08-13 Matsushita Electric Ind Co Ltd 高耐圧ｍｏｓ型半導体装置
JP3334313B2 (ja) * 1994-01-19 2002-10-15 日本電信電話株式会社 横形ｍｏｓ電界効果トランジスタ
KR100289049B1 (ko) * 1997-12-17 2001-10-24 정선종 이중필드판구조를갖는전력소자
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
US6545316B1 (en) * 2000-06-23 2003-04-08 Silicon Wireless Corporation MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
JP2002353444A (ja) * 2001-05-28 2002-12-06 Fuji Electric Co Ltd 半導体装置
JP2004335990A (ja) * 2003-03-10 2004-11-25 Fuji Electric Device Technology Co Ltd Ｍｉｓ型半導体装置
DE10310552B4 (de) * 2003-03-11 2014-01-23 Infineon Technologies Ag Feldeffekttransistor und Halbleiterchip mit diesem Feldeffekttransistor
KR100688552B1 (ko) * 2005-06-08 2007-03-02 삼성전자주식회사 두꺼운 에지 게이트절연막 패턴을 갖는 모스 전계효과트랜지스터 및 그 제조방법
EP1946378B1 (en) * 2005-11-02 2012-12-12 Nxp B.V. Method of manufacturing a semiconductor device
JP2008135700A (ja) * 2006-11-01 2008-06-12 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子
JP2008277640A (ja) * 2007-05-02 2008-11-13 Toshiba Corp 窒化物半導体素子
JP2008311392A (ja) * 2007-06-14 2008-12-25 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
US20090267145A1 (en) * 2008-04-23 2009-10-29 Ciclon Semiconductor Device Corp. Mosfet device having dual interlevel dielectric thickness and method of making same
US8507988B2 (en) * 2009-10-02 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage devices, systems, and methods for forming the high voltage devices
JP5037594B2 (ja) * 2009-12-08 2012-09-26 シャープ株式会社 電界効果トランジスタ
JP2011198837A (ja) * 2010-03-17 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法

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