JP2013084881A - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP2013084881A
JP2013084881A JP2012051012A JP2012051012A JP2013084881A JP 2013084881 A JP2013084881 A JP 2013084881A JP 2012051012 A JP2012051012 A JP 2012051012A JP 2012051012 A JP2012051012 A JP 2012051012A JP 2013084881 A JP2013084881 A JP 2013084881A
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JP
Japan
Prior art keywords
light emitting
electrode
layer
semiconductor layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012051012A
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English (en)
Japanese (ja)
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JP2013084881A5 (https=
Inventor
Dong-Wook Park
パク・ドンウク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110102986A external-priority patent/KR20130038558A/ko
Priority claimed from KR1020110104233A external-priority patent/KR20130039574A/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2013084881A publication Critical patent/JP2013084881A/ja
Publication of JP2013084881A5 publication Critical patent/JP2013084881A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2012051012A 2011-10-10 2012-03-07 発光素子 Pending JP2013084881A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0102986 2011-10-10
KR1020110102986A KR20130038558A (ko) 2011-10-10 2011-10-10 발광소자
KR1020110104233A KR20130039574A (ko) 2011-10-12 2011-10-12 발광소자
KR10-2011-0104233 2011-10-12

Publications (2)

Publication Number Publication Date
JP2013084881A true JP2013084881A (ja) 2013-05-09
JP2013084881A5 JP2013084881A5 (https=) 2015-04-09

Family

ID=45562246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012051012A Pending JP2013084881A (ja) 2011-10-10 2012-03-07 発光素子

Country Status (4)

Country Link
US (1) US8785952B2 (https=)
EP (1) EP2581953B1 (https=)
JP (1) JP2013084881A (https=)
CN (1) CN103035809B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072435A (ja) * 2014-09-30 2016-05-09 日亜化学工業株式会社 発光装置
JP2016119397A (ja) * 2014-12-22 2016-06-30 スタンレー電気株式会社 半導体発光装置
JP2016525282A (ja) * 2013-07-26 2016-08-22 リヤード オプトエレクトロニック カンパニー リミテッドＬｅｙａｒｄ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃ Ｃｏ．， Ｌｔｄ． 発光ダイオードディスプレイ画面
JP2016163015A (ja) * 2015-03-05 2016-09-05 旭化成株式会社 紫外線発光素子及びその製造方法
WO2017072859A1 (ja) * 2015-10-27 2017-05-04 創光科学株式会社 窒化物半導体紫外線発光装置及びその製造方法
JPWO2020153191A1 (ja) * 2019-01-25 2021-12-02 ソニーグループ株式会社 発光デバイスおよび画像表示装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US20140362603A1 (en) 2013-05-09 2014-12-11 Seoul Semiconductor Co., Ltd. Light source module and backlight unit having the same
KR101688163B1 (ko) * 2015-03-30 2016-12-20 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
DE102015112538B4 (de) 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2017112321A (ja) * 2015-12-18 2017-06-22 ソニー株式会社 発光ユニットおよび表示装置
TW201727894A (zh) * 2016-01-18 2017-08-01 國立清華大學 具有垂直型跨接結構電極的水平式半導體元件
US10332949B2 (en) 2016-07-06 2019-06-25 Seoul Semiconductor Co., Ltd. Display apparatus
TWI668855B (zh) * 2017-07-07 2019-08-11 Hon Hai Precision Industry Co., Ltd. 微型led顯示面板
KR102474953B1 (ko) 2018-03-22 2022-12-06 엘지이노텍 주식회사 반도체 소자
US11848398B2 (en) * 2019-12-29 2023-12-19 Seoul Viosys Co., Ltd. Flat bonding method of light emitting device and flat bonder for light emitting device
CN113066805B (zh) * 2021-03-23 2023-01-10 京东方科技集团股份有限公司 显示装置、显示面板、驱动背板及其制造方法

Citations (16)

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Publication number Priority date Publication date Assignee Title
JP2000114595A (ja) * 1998-10-07 2000-04-21 Matsushita Electronics Industry Corp ＧａＮ系化合物半導体発光素子
JP2001085746A (ja) * 1999-09-14 2001-03-30 Seiwa Electric Mfg Co Ltd Ｌｅｄチップ
JP2002353507A (ja) * 2001-05-23 2002-12-06 Citizen Electronics Co Ltd 発光ダイオードおよびその製造方法
JP2003282957A (ja) * 2002-03-20 2003-10-03 Nichia Chem Ind Ltd フリップチップ型半導体素子及びその製造方法
JP2004096113A (ja) * 2002-09-02 2004-03-25 Samsung Electro Mech Co Ltd 発光ダイオード及びその製造方法
JP2005197573A (ja) * 2004-01-09 2005-07-21 Sharp Corp Ｉｉｉ族窒化物半導体発光素子
WO2006035664A1 (ja) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
JP2006196538A (ja) * 2005-01-11 2006-07-27 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2006216933A (ja) * 2005-02-03 2006-08-17 Epistar Corp 発光素子及びその製造方法
JP2006245231A (ja) * 2005-03-02 2006-09-14 Nichia Chem Ind Ltd 半導体発光素子
JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP2011066304A (ja) * 2009-09-18 2011-03-31 Toyoda Gosei Co Ltd 発光素子
WO2011068161A1 (ja) * 2009-12-04 2011-06-09 昭和電工株式会社 半導体発光素子、電子機器および発光装置
WO2011093454A1 (ja) * 2010-01-29 2011-08-04 シチズン電子株式会社 発光装置の製造方法及び発光装置
US20110233588A1 (en) * 2010-03-26 2011-09-29 Toyoda Gosei Co., Ltd. Semiconductor light-emitting device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4203132B2 (ja) * 1997-03-31 2008-12-24 シャープ株式会社 発光素子及びその製造方法
US6630689B2 (en) 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
CN100454592C (zh) * 2005-07-06 2009-01-21 晶元光电股份有限公司 半导体发光元件
JP2007173269A (ja) * 2005-12-19 2007-07-05 Showa Denko Kk フリップチップ型半導体発光素子、フリップチップ型半導体発光素子の製造方法、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
US8884321B2 (en) 2008-04-06 2014-11-11 Lg Innotek Co., Ltd. Luminous element

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114595A (ja) * 1998-10-07 2000-04-21 Matsushita Electronics Industry Corp ＧａＮ系化合物半導体発光素子
JP2001085746A (ja) * 1999-09-14 2001-03-30 Seiwa Electric Mfg Co Ltd Ｌｅｄチップ
JP2002353507A (ja) * 2001-05-23 2002-12-06 Citizen Electronics Co Ltd 発光ダイオードおよびその製造方法
JP2003282957A (ja) * 2002-03-20 2003-10-03 Nichia Chem Ind Ltd フリップチップ型半導体素子及びその製造方法
JP2004096113A (ja) * 2002-09-02 2004-03-25 Samsung Electro Mech Co Ltd 発光ダイオード及びその製造方法
JP2005197573A (ja) * 2004-01-09 2005-07-21 Sharp Corp Ｉｉｉ族窒化物半導体発光素子
WO2006035664A1 (ja) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
JP2006196538A (ja) * 2005-01-11 2006-07-27 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2006216933A (ja) * 2005-02-03 2006-08-17 Epistar Corp 発光素子及びその製造方法
JP2006245231A (ja) * 2005-03-02 2006-09-14 Nichia Chem Ind Ltd 半導体発光素子
JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP2011066304A (ja) * 2009-09-18 2011-03-31 Toyoda Gosei Co Ltd 発光素子
WO2011068161A1 (ja) * 2009-12-04 2011-06-09 昭和電工株式会社 半導体発光素子、電子機器および発光装置
WO2011093454A1 (ja) * 2010-01-29 2011-08-04 シチズン電子株式会社 発光装置の製造方法及び発光装置
US20110233588A1 (en) * 2010-03-26 2011-09-29 Toyoda Gosei Co., Ltd. Semiconductor light-emitting device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016525282A (ja) * 2013-07-26 2016-08-22 リヤード オプトエレクトロニック カンパニー リミテッドＬｅｙａｒｄ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃ Ｃｏ．， Ｌｔｄ． 発光ダイオードディスプレイ画面
JP2016072435A (ja) * 2014-09-30 2016-05-09 日亜化学工業株式会社 発光装置
JP2016119397A (ja) * 2014-12-22 2016-06-30 スタンレー電気株式会社 半導体発光装置
JP2016163015A (ja) * 2015-03-05 2016-09-05 旭化成株式会社 紫外線発光素子及びその製造方法
WO2017072859A1 (ja) * 2015-10-27 2017-05-04 創光科学株式会社 窒化物半導体紫外線発光装置及びその製造方法
JPWO2017072859A1 (ja) * 2015-10-27 2018-08-02 創光科学株式会社 窒化物半導体紫外線発光装置及びその製造方法
US10361346B2 (en) 2015-10-27 2019-07-23 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light emitting device and method for manufacturing same
JPWO2020153191A1 (ja) * 2019-01-25 2021-12-02 ソニーグループ株式会社 発光デバイスおよび画像表示装置
JP7484727B2 (ja) 2019-01-25 2024-05-16 ソニーグループ株式会社 発光デバイスおよび画像表示装置
US12068441B2 (en) 2019-01-25 2024-08-20 Sony Group Corporation Light-emitting device and image display apparatus

Also Published As

Publication number Publication date
EP2581953B1 (en) 2020-04-08
EP2581953A3 (en) 2013-05-29
US20120132946A1 (en) 2012-05-31
CN103035809A (zh) 2013-04-10
US8785952B2 (en) 2014-07-22
CN103035809B (zh) 2017-06-20
EP2581953A2 (en) 2013-04-17

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