JP2016119397A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2016119397A JP2016119397A JP2014258489A JP2014258489A JP2016119397A JP 2016119397 A JP2016119397 A JP 2016119397A JP 2014258489 A JP2014258489 A JP 2014258489A JP 2014258489 A JP2014258489 A JP 2014258489A JP 2016119397 A JP2016119397 A JP 2016119397A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Abstract
Description
11 搭載基板
NW n側配線(第2の配線)
PW p側配線(第1の配線、個別配線)
20、20A 半導体発光素子
SL 半導体構造層
21 n型半導体層(第2の半導体層)
22 活性層
23 p型半導体層(第1の半導体層)
NE n電極(第2の電極)
PE p電極(第1の電極)
ES1、ES2 端面
ML1、ML2 反射ミラー
24 光散乱体
Claims (6)
- 搭載基板と、
前記搭載基板上に並置され、その各々が第1の導電型を有する第1の半導体層、活性層及び前記第1の半導体層とは反対の導電型の第2の導電型を有する第2の半導体層が前記搭載基板上に順次積層された半導体構造層を有する複数の半導体発光素子と、を有し、
前記複数の半導体発光素子の各々は、前記半導体構造層の互いに対向する端面によって構成された共振器を有し、
前記複数の半導体発光素子の各々は、前記第2の半導体層の表面から前記活性層に向けて窪んだ凹部を有することを特徴とする半導体発光装置。 - 前記複数の前記半導体発光素子の各々における前記第1の半導体層の各々に接続された個別配線を有することを特徴とする請求項1に記載の半導体発光装置。
- 前記凹部は、その底部に光散乱構造が設けられていることを特徴とする請求項1又は2に記載の半導体発光装置。
- 前記互いに対向する端面には反射ミラーが設けられており、
前記反射ミラーは光学多層膜からなることを特徴とする請求項1乃至3のいずれか1つに記載の半導体発光装置。 - 前記互いに対向する端面には反射ミラーが設けられており、
前記反射ミラーは、前記互いに対向する端面上に形成された光学多層膜と、前記光学多層膜上に形成された反射金属膜とからなることを特徴とする請求項1乃至3のいずれか1つに記載の半導体発光装置。 - 前記光散乱構造は前記凹部の前記底部に設けられた蛍光体粒子を含むことを特徴とする請求項3乃至5のいずれか1つに記載の半導体発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014258489A JP6527695B2 (ja) | 2014-12-22 | 2014-12-22 | 半導体発光装置 |
US14/977,447 US9577167B2 (en) | 2014-12-22 | 2015-12-21 | Semiconductor light emitting device |
Applications Claiming Priority (1)
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JP2014258489A JP6527695B2 (ja) | 2014-12-22 | 2014-12-22 | 半導体発光装置 |
Publications (2)
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JP2016119397A true JP2016119397A (ja) | 2016-06-30 |
JP6527695B2 JP6527695B2 (ja) | 2019-06-05 |
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JP2014258489A Active JP6527695B2 (ja) | 2014-12-22 | 2014-12-22 | 半導体発光装置 |
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US (1) | US9577167B2 (ja) |
JP (1) | JP6527695B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11094530B2 (en) | 2019-05-14 | 2021-08-17 | Applied Materials, Inc. | In-situ curing of color conversion layer |
US11239213B2 (en) * | 2019-05-17 | 2022-02-01 | Applied Materials, Inc. | In-situ curing of color conversion layer in recess |
Citations (19)
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JPS62248283A (ja) * | 1986-04-22 | 1987-10-29 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS63147388A (ja) * | 1986-12-10 | 1988-06-20 | Nec Corp | 半導体レ−ザ |
JPH01120881A (ja) * | 1987-11-04 | 1989-05-12 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH02119196A (ja) * | 1988-08-09 | 1990-05-07 | General Electric Co (Ge) | 出力が結合された表面出射型半導体レーザ装置 |
JPH06237043A (ja) * | 1993-02-08 | 1994-08-23 | Sony Corp | 半導体レーザー |
JP2004140113A (ja) * | 2002-10-16 | 2004-05-13 | Sharp Corp | 光学素子および光学センサ |
JP2004341128A (ja) * | 2003-05-14 | 2004-12-02 | Sharp Corp | 発光体とそれを含む照明装置および表示装置 |
US20090268770A1 (en) * | 2008-04-28 | 2009-10-29 | Shih-Yuan Wang | Gain Clamped Optical Device For Emitting LED Mode Light |
JP2010074008A (ja) * | 2008-09-19 | 2010-04-02 | Nichia Corp | 半導体発光素子 |
JP2010087292A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 発光素子 |
JP2010093127A (ja) * | 2008-10-09 | 2010-04-22 | Sumitomo Electric Ind Ltd | 半導体発光装置 |
US20110294240A1 (en) * | 2010-05-28 | 2011-12-01 | Yu-Sik Kim | Light-emitting device, light-emitting system including the same, and fabricating method thereof |
US20120050694A1 (en) * | 2010-08-27 | 2012-03-01 | Industrial Technology Research Institute | Light emitting unit array and projection system |
JP2013021213A (ja) * | 2011-07-13 | 2013-01-31 | Mitsubishi Electric Corp | レーザ素子 |
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JP6282485B2 (ja) * | 2014-02-24 | 2018-02-21 | スタンレー電気株式会社 | 半導体発光素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002176224A (ja) * | 2000-12-07 | 2002-06-21 | Fuji Photo Film Co Ltd | レーザー光源 |
US6797990B2 (en) * | 2001-06-29 | 2004-09-28 | Showa Denko Kabushiki Kaisha | Boron phosphide-based semiconductor device and production method thereof |
US7407421B2 (en) * | 2003-11-20 | 2008-08-05 | Matsushita Electric Industrial Co., Ltd. | Light source, optical pickup, and electronic apparatus |
JP4839478B2 (ja) * | 2005-10-03 | 2011-12-21 | Dowaエレクトロニクス株式会社 | 垂直共振器型発光ダイオード及びその製造方法 |
US7858995B2 (en) * | 2007-08-03 | 2010-12-28 | Rohm Co., Ltd. | Semiconductor light emitting device |
JP2013065726A (ja) | 2011-09-16 | 2013-04-11 | Toshiba Corp | 半導体発光装置及びその製造方法 |
-
2014
- 2014-12-22 JP JP2014258489A patent/JP6527695B2/ja active Active
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2015
- 2015-12-21 US US14/977,447 patent/US9577167B2/en active Active
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS57104555U (ja) * | 1980-12-17 | 1982-06-28 | ||
JPS62248283A (ja) * | 1986-04-22 | 1987-10-29 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS63147388A (ja) * | 1986-12-10 | 1988-06-20 | Nec Corp | 半導体レ−ザ |
JPH01120881A (ja) * | 1987-11-04 | 1989-05-12 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH02119196A (ja) * | 1988-08-09 | 1990-05-07 | General Electric Co (Ge) | 出力が結合された表面出射型半導体レーザ装置 |
JPH06237043A (ja) * | 1993-02-08 | 1994-08-23 | Sony Corp | 半導体レーザー |
JP2004140113A (ja) * | 2002-10-16 | 2004-05-13 | Sharp Corp | 光学素子および光学センサ |
JP2004341128A (ja) * | 2003-05-14 | 2004-12-02 | Sharp Corp | 発光体とそれを含む照明装置および表示装置 |
US20090268770A1 (en) * | 2008-04-28 | 2009-10-29 | Shih-Yuan Wang | Gain Clamped Optical Device For Emitting LED Mode Light |
JP2010074008A (ja) * | 2008-09-19 | 2010-04-02 | Nichia Corp | 半導体発光素子 |
JP2010087292A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 発光素子 |
JP2010093127A (ja) * | 2008-10-09 | 2010-04-22 | Sumitomo Electric Ind Ltd | 半導体発光装置 |
US20110294240A1 (en) * | 2010-05-28 | 2011-12-01 | Yu-Sik Kim | Light-emitting device, light-emitting system including the same, and fabricating method thereof |
US20120050694A1 (en) * | 2010-08-27 | 2012-03-01 | Industrial Technology Research Institute | Light emitting unit array and projection system |
JP2014515554A (ja) * | 2011-05-19 | 2014-06-30 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体モジュール、および複数のそのようなモジュールを有するディスプレイ |
JP2013021213A (ja) * | 2011-07-13 | 2013-01-31 | Mitsubishi Electric Corp | レーザ素子 |
JP2013030642A (ja) * | 2011-07-29 | 2013-02-07 | Mitsubishi Electric Corp | レーザ素子 |
JP2013084881A (ja) * | 2011-10-10 | 2013-05-09 | Lg Innotek Co Ltd | 発光素子 |
JP6282485B2 (ja) * | 2014-02-24 | 2018-02-21 | スタンレー電気株式会社 | 半導体発光素子 |
Also Published As
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US9577167B2 (en) | 2017-02-21 |
US20160181488A1 (en) | 2016-06-23 |
JP6527695B2 (ja) | 2019-06-05 |
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