CN103035809B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103035809B
CN103035809B CN201210055541.5A CN201210055541A CN103035809B CN 103035809 B CN103035809 B CN 103035809B CN 201210055541 A CN201210055541 A CN 201210055541A CN 103035809 B CN103035809 B CN 103035809B
Authority
CN
China
Prior art keywords
light emitting
layer
emitting device
electrode
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210055541.5A
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English (en)
Chinese (zh)
Other versions
CN103035809A (zh
Inventor
朴东昱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110102986A external-priority patent/KR20130038558A/ko
Priority claimed from KR1020110104233A external-priority patent/KR20130039574A/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103035809A publication Critical patent/CN103035809A/zh
Application granted granted Critical
Publication of CN103035809B publication Critical patent/CN103035809B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201210055541.5A 2011-10-10 2012-03-05 发光器件 Active CN103035809B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0102986 2011-10-10
KR1020110102986A KR20130038558A (ko) 2011-10-10 2011-10-10 발광소자
KR1020110104233A KR20130039574A (ko) 2011-10-12 2011-10-12 발광소자
KR10-2011-0104233 2011-10-12

Publications (2)

Publication Number Publication Date
CN103035809A CN103035809A (zh) 2013-04-10
CN103035809B true CN103035809B (zh) 2017-06-20

Family

ID=45562246

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210055541.5A Active CN103035809B (zh) 2011-10-10 2012-03-05 发光器件

Country Status (4)

Country Link
US (1) US8785952B2 (https=)
EP (1) EP2581953B1 (https=)
JP (1) JP2013084881A (https=)
CN (1) CN103035809B (https=)

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US9269876B2 (en) * 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US20140362603A1 (en) 2013-05-09 2014-12-11 Seoul Semiconductor Co., Ltd. Light source module and backlight unit having the same
CN103456729B (zh) * 2013-07-26 2016-09-21 利亚德光电股份有限公司 发光二极管显示屏
JP6511757B2 (ja) * 2014-09-30 2019-05-15 日亜化学工業株式会社 発光装置
JP6527695B2 (ja) * 2014-12-22 2019-06-05 スタンレー電気株式会社 半導体発光装置
JP2016163015A (ja) * 2015-03-05 2016-09-05 旭化成株式会社 紫外線発光素子及びその製造方法
KR101688163B1 (ko) * 2015-03-30 2016-12-20 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
DE102015112538B4 (de) 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6352551B2 (ja) * 2015-10-27 2018-07-04 創光科学株式会社 窒化物半導体紫外線発光装置及びその製造方法
JP2017112321A (ja) * 2015-12-18 2017-06-22 ソニー株式会社 発光ユニットおよび表示装置
TW201727894A (zh) * 2016-01-18 2017-08-01 國立清華大學 具有垂直型跨接結構電極的水平式半導體元件
US10332949B2 (en) 2016-07-06 2019-06-25 Seoul Semiconductor Co., Ltd. Display apparatus
TWI668855B (zh) * 2017-07-07 2019-08-11 Hon Hai Precision Industry Co., Ltd. 微型led顯示面板
KR102474953B1 (ko) 2018-03-22 2022-12-06 엘지이노텍 주식회사 반도체 소자
WO2020153191A1 (ja) * 2019-01-25 2020-07-30 ソニー株式会社 発光デバイスおよび画像表示装置
US11848398B2 (en) * 2019-12-29 2023-12-19 Seoul Viosys Co., Ltd. Flat bonding method of light emitting device and flat bonder for light emitting device
CN113066805B (zh) * 2021-03-23 2023-01-10 京东方科技集团股份有限公司 显示装置、显示面板、驱动背板及其制造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4203132B2 (ja) * 1997-03-31 2008-12-24 シャープ株式会社 発光素子及びその製造方法
JP3896704B2 (ja) * 1998-10-07 2007-03-22 松下電器産業株式会社 ＧａＮ系化合物半導体発光素子
JP4418057B2 (ja) * 1999-09-14 2010-02-17 星和電機株式会社 Ｌｅｄチップ
US6630689B2 (en) 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
JP4822482B2 (ja) * 2001-05-23 2011-11-24 シチズン電子株式会社 発光ダイオードおよびその製造方法
JP4214704B2 (ja) * 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
KR100499129B1 (ko) * 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
JP2005197573A (ja) * 2004-01-09 2005-07-21 Sharp Corp Ｉｉｉ族窒化物半導体発光素子
WO2006035664A1 (ja) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
JP4614773B2 (ja) * 2005-01-11 2011-01-19 パナソニック株式会社 半導体発光装置
TWI244228B (en) 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
JP5008262B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
CN100454592C (zh) * 2005-07-06 2009-01-21 晶元光电股份有限公司 半导体发光元件
JP2007173269A (ja) * 2005-12-19 2007-07-05 Showa Denko Kk フリップチップ型半導体発光素子、フリップチップ型半導体発光素子の製造方法、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
US8884321B2 (en) 2008-04-06 2014-11-11 Lg Innotek Co., Ltd. Luminous element
JP2010087292A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd 発光素子
JP5152133B2 (ja) * 2009-09-18 2013-02-27 豊田合成株式会社 発光素子
JP2011119491A (ja) * 2009-12-04 2011-06-16 Showa Denko Kk 半導体発光素子、電子機器および発光装置
CN102884645B (zh) * 2010-01-29 2015-05-27 西铁城电子株式会社 发光装置的制造方法以及发光装置
JP5381853B2 (ja) * 2010-03-26 2014-01-08 豊田合成株式会社 半導体発光素子

Also Published As

Publication number Publication date
EP2581953B1 (en) 2020-04-08
JP2013084881A (ja) 2013-05-09
EP2581953A3 (en) 2013-05-29
US20120132946A1 (en) 2012-05-31
CN103035809A (zh) 2013-04-10
US8785952B2 (en) 2014-07-22
EP2581953A2 (en) 2013-04-17

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Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China