JP2013067856A - 触媒の吸着処理方法および吸着処理装置 - Google Patents
触媒の吸着処理方法および吸着処理装置 Download PDFInfo
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- 239000003054 catalyst Substances 0.000 title claims abstract description 241
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 61
- 239000002105 nanoparticle Substances 0.000 claims abstract description 34
- 239000002270 dispersing agent Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 127
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 27
- 238000007654 immersion Methods 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 7
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 7
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 7
- 229920002873 Polyethylenimine Polymers 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 6
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 description 37
- 230000008569 process Effects 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000007598 dipping method Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000000084 colloidal system Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000004931 aggregating effect Effects 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1806—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by mechanical pretreatment, e.g. grinding, sanding
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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Abstract
【解決手段】はじめに、凹部22が形成された基板20を準備する。次に、触媒吸着装置10によって、基板20と、分散剤で被覆されたナノ粒子からなる触媒を含む触媒溶液12とを接触させ、これによって、基板20の表面に触媒23を吸着させる。この際、触媒溶液12に高周波振動が付与される。
【選択図】図2
Description
以下、図1乃至図4を参照して、本発明の実施の形態について説明する。まず図1を参照して、半導体装置の配線形成システム1について説明する。図1は、本実施の形態における配線形成システム1を示すブロック図である。
次に上述の触媒吸着装置10について、図2を参照して詳細に説明する。図2は、触媒吸着装置10を示す縦断面図である。
次に、基板20に供給される触媒溶液12、および触媒溶液12に含まれる触媒について説明する。はじめに触媒について説明する。
次に、このような構成からなる本実施の形態の作用について説明する。ここでは、配線基板を作製する方法について、図3(a)〜(d)を参照して説明する。
次に、触媒吸着装置10によって基板20と触媒溶液12とを接触させる。具体的には、図2に示すように、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬する(浸漬工程)。これによって、図3(b)に示すように、基板20の表面に触媒23を吸着させる。ここで本実施の形態によれば、浸漬工程の際、高周波振動子14によって触媒溶液12に高周波振動が付与される。このため、基板20の凹部22の下部にまで十分に触媒23を拡散させることができ、このことにより、図3(b)に示すように、凹部22の下部にまで短時間で触媒を吸着させることができる。
次に、めっき処理装置6によって、触媒23が吸着された基板20の表面にめっき層24を形成する。めっき層24を形成するための具体的な方法は特には限られないが、例えば、めっき液が貯留されためっき液槽(図示せず)を準備し、次に、めっき液槽に基板20を浸漬する。これによって、図3(c)に示すように、基板20の表面にめっき層24が無電解めっきにより形成される。
次に、絶縁層21の裏面側(凹部22が露出していない側)を化学機械研磨し、これによって、絶縁層21の裏面側にまで凹部22を露出させる。このことにより、図3(d)に示すように、めっき層24が形成された貫通ビアホール26を有する配線基板が作製される。なお図示はしないが、この後、貫通ビアホール26上にバンプを形成する工程や、絶縁層21の表面上または裏面上に所定のパターンを形成する工程などが適宜実施されてもよい。
上述した実施の形態において、触媒23が絶縁層21上に吸着される例を示したが、これに限られることはない。例えば、基板20の表面にバリア膜が形成される場合、触媒23をバリア膜上に吸着させてもよい。このような例について、図4(a)〜(d)を参照して説明する。
また上述した実施の形態において、基板20の凹部22が、絶縁層21に形成された非貫通孔からなる例を示したが、これに限られることはない。本実施の形態による吸着処理方法および吸着処理装置によれば、基板20の凹部22が貫通孔であるか非貫通孔であるかに依らず、凹部22の下部にまで短時間で触媒を吸着させることができる。
また本実施の形態および各変形例において、めっき工程により、基板20の凹部22の側面近傍にのみめっき層24が形成される例を示した。しかしながら、これに限られることはなく、基板20の凹部22内の全空間に銅などの導電性材料が埋め込まれるよう、めっき工程を実施してもよい。この場合、凹部22の側面近傍に形成されためっき層24をシード層とする電解めっきが実施されてもよい。
二酸化ケイ素からなる絶縁層21を有する基板20に、直径約5μm、深さ約30μm(即ち、アスペクト比が約6)の凹部22を形成した。次に、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬した(浸漬工程)。その際、触媒溶液槽11内に用いられた高周波振動子14を用いて、触媒溶液12に約37kHzの高周波振動を付与した。
パラジウム(0.1wt%)
分散剤(ポリビニルピロリドン)
この場合、触媒は、パラジウムからなる平均直径(平均粒径)4nmのナノ粒子によって構成されていた。
・浸漬条件
温度 :常温
浸漬時間 :5分
触媒溶液12に高周波振動を付与しなかったこと以外は、実施例1と同様にして、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬した。
浸漬時間を1時間としたこと以外は、実施例1と同様にして、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬した。
浸漬時間を3時間としたこと以外は、実施例1と同様にして、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬した。
二酸化ケイ素からなる絶縁層21を有する基板20に、直径約3μm、深さ約25μm(即ち、アスペクト比が約8)の凹部22を形成した。次に、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬した(浸漬工程)。触媒溶液としては、塩化スズで保護したパラジウムのコロイド溶液(以下、Pd/Snコロイド溶液とも称する)を含む溶液を用いた。その後、後処理工程として、硫酸(10%)を含む酸性アクセラレーター浴に基板20を20分間にわたって浸漬した。
OPC−80 catalyst(奥野製薬製):50ml/L
OPC−SAL(奥野製薬製) M:260g/L
・触媒溶液の浸漬条件
温度 :常温
浸漬時間 :1時間
浸漬工程において触媒溶液に約37kHzの高周波振動を付与したこと以外は、比較例2と同様にして、触媒溶液槽11に貯留された触媒溶液12に基板20を浸漬した。
11 触媒溶液槽
12 触媒溶液
13 基板保持部
14 高周波振動子
20 基板
21 絶縁層
22 凹部
23 触媒
24 めっき層
25 バリア膜
Claims (14)
- 凹部が形成された基板を準備する工程と、
前記基板と、分散剤で被覆されたナノ粒子からなる触媒を含む触媒溶液とを接触させ、これによって前記基板の表面に前記触媒を吸着させる吸着工程と、を備え、
前記吸着工程において、前記触媒溶液に高周波振動が付与されることを特徴とする触媒の吸着処理方法。 - 前記分散剤が、ポリビニルピロリドン(PVP)、ポリアクリル酸(PAA)、ポリエチレンイミン(PEI)、テトラメチルアンモニウム(TMA)またはクエン酸を含むことを特徴とする請求項1に記載の吸着処理方法。
- 前記ナノ粒子が、パラジウム、金または白金を含むことを特徴とする請求項1または2に記載の吸着処理方法。
- 前記ナノ粒子が、ルテニウムを含むことを特徴とする請求項1または2に記載の吸着処理方法。
- 前記吸着工程において、前記触媒が前記基板の前記凹部の側面に吸着されることを特徴とする請求項1に記載の吸着処理方法。
- 前記吸着工程が、ナノ粒子からなる触媒を含む触媒溶液に前記基板を浸漬する浸漬工程を含むことを特徴とする請求項1に記載の触媒の吸着処理方法。
- 前記基板に形成された前記凹部の直径が、100nm〜100μmの範囲内となっていることを特徴とする請求項1乃至6のいずれか一項に記載の触媒の吸着処理方法。
- 凹部が形成された基板を保持する基板保持部と、
前記基板と、分散剤で被覆されたナノ粒子からなる触媒を含む触媒溶液とが接触するよう、前記基板に対して前記触媒溶液を供給する触媒溶液供給部と、
前記基板に対して供給される前記触媒溶液に高周波振動を付与する高周波振動部と、を備えたことを特徴とする触媒の吸着処理装置。 - 前記分散剤が、ポリビニルピロリドン(PVP)、ポリアクリル酸(PAA)、ポリエチレンイミン(PEI)、テトラメチルアンモニウム(TMA)またはクエン酸を含むことを特徴とする請求項8に記載の吸着処理装置。
- 前記ナノ粒子が、パラジウム、金または白金を含むことを特徴とする請求項8または9に記載の吸着処理装置。
- 前記ナノ粒子が、ルテニウムを含むことを特徴とする請求項8または9に記載の吸着処理装置。
- 前記触媒が前記基板の前記凹部の側面に吸着されることを特徴とする請求項8に記載の吸着処理装置。
- 前記触媒溶液供給部が、前記触媒溶液が貯留される触媒溶液槽を含み、
前記高周波振動部が、前記触媒溶液槽内に配置された高周波振動子を含むことを特徴とする請求項8に記載の触媒の吸着処理装置。 - 前記基板に形成された前記凹部の直径が、100nm〜100μmの範囲内となっていることを特徴とする請求項8乃至13のいずれか一項に記載の触媒の吸着処理装置。
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