JP2013055336A5 - - Google Patents

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Publication number
JP2013055336A5
JP2013055336A5 JP2012180127A JP2012180127A JP2013055336A5 JP 2013055336 A5 JP2013055336 A5 JP 2013055336A5 JP 2012180127 A JP2012180127 A JP 2012180127A JP 2012180127 A JP2012180127 A JP 2012180127A JP 2013055336 A5 JP2013055336 A5 JP 2013055336A5
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JP
Japan
Prior art keywords
gcib
etching
etching gas
gas
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012180127A
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English (en)
Japanese (ja)
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JP2013055336A (ja
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Publication date
Priority claimed from US13/223,906 external-priority patent/US8512586B2/en
Application filed filed Critical
Publication of JP2013055336A publication Critical patent/JP2013055336A/ja
Publication of JP2013055336A5 publication Critical patent/JP2013055336A5/ja
Pending legal-status Critical Current

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JP2012180127A 2011-09-01 2012-08-15 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス Pending JP2013055336A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/223,906 2011-09-01
US13/223,906 US8512586B2 (en) 2011-09-01 2011-09-01 Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials

Publications (2)

Publication Number Publication Date
JP2013055336A JP2013055336A (ja) 2013-03-21
JP2013055336A5 true JP2013055336A5 (https=) 2015-06-18

Family

ID=47753485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012180127A Pending JP2013055336A (ja) 2011-09-01 2012-08-15 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス

Country Status (4)

Country Link
US (3) US8512586B2 (https=)
JP (1) JP2013055336A (https=)
KR (1) KR20130025357A (https=)
TW (1) TWI508166B (https=)

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CN107112186B (zh) * 2014-09-05 2020-04-21 Tel艾派恩有限公司 用于基片的射束处理的过程气体增强
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US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
US20180047564A1 (en) * 2016-08-10 2018-02-15 GlobalFoundries, Inc. Method to tune contact cd and reduce mask count by tilted ion beam
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US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
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JP7109165B2 (ja) * 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP7113711B2 (ja) * 2018-09-25 2022-08-05 東京エレクトロン株式会社 エッチング方法、エッチング装置、および記憶媒体
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US8557710B2 (en) * 2011-09-01 2013-10-15 Tel Epion Inc. Gas cluster ion beam etching process for metal-containing materials
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