JP2013055336A - 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス - Google Patents

複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス Download PDF

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Publication number
JP2013055336A
JP2013055336A JP2012180127A JP2012180127A JP2013055336A JP 2013055336 A JP2013055336 A JP 2013055336A JP 2012180127 A JP2012180127 A JP 2012180127A JP 2012180127 A JP2012180127 A JP 2012180127A JP 2013055336 A JP2013055336 A JP 2013055336A
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gcib
etching
substrate
gas
etch
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Japanese (ja)
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JP2013055336A5 (https=
Inventor
D Tabat Martin
ディー タバット マーティン
K Olsen Christopher
ケイ オルセン クリストファー
Xiao Yang
シャオ ヤン
Maccrimmon Ruairidh
マッククリモン ルアリー
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TEL Epion Inc
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TEL Epion Inc
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Publication of JP2013055336A publication Critical patent/JP2013055336A/ja
Publication of JP2013055336A5 publication Critical patent/JP2013055336A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
JP2012180127A 2011-09-01 2012-08-15 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス Pending JP2013055336A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/223,906 2011-09-01
US13/223,906 US8512586B2 (en) 2011-09-01 2011-09-01 Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials

Publications (2)

Publication Number Publication Date
JP2013055336A true JP2013055336A (ja) 2013-03-21
JP2013055336A5 JP2013055336A5 (https=) 2015-06-18

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JP2012180127A Pending JP2013055336A (ja) 2011-09-01 2012-08-15 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス

Country Status (4)

Country Link
US (3) US8512586B2 (https=)
JP (1) JP2013055336A (https=)
KR (1) KR20130025357A (https=)
TW (1) TWI508166B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
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JP2015029072A (ja) * 2013-06-10 2015-02-12 エフ・イ−・アイ・カンパニー 電子ビーム誘起エッチング
WO2016093087A1 (ja) * 2014-12-09 2016-06-16 東京エレクトロン株式会社 パターン形成方法、ガスクラスターイオンビーム照射装置及びパターン形成装置
JP2017183534A (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 プラズマエッチングガス及びプラズマエッチング方法
JP2020515047A (ja) * 2016-12-30 2020-05-21 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造エッチング用ヨウ素含有化合物
JP2023071504A (ja) * 2021-11-11 2023-05-23 東京エレクトロン株式会社 基板処理方法

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US8512586B2 (en) * 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
US9209033B2 (en) * 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
CN105917438B (zh) * 2013-11-22 2018-04-24 Tel 艾派恩有限公司 分子束增强gcib处理
US9589853B2 (en) 2014-02-28 2017-03-07 Lam Research Corporation Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
US20150279686A1 (en) * 2014-03-31 2015-10-01 Taiwan Semiconductor Manufacturing Company Limited Semiconductor processing methods
KR102306979B1 (ko) * 2014-04-01 2021-09-30 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
CN107112186B (zh) * 2014-09-05 2020-04-21 Tel艾派恩有限公司 用于基片的射束处理的过程气体增强
KR102257901B1 (ko) * 2014-09-19 2021-05-31 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
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US20170345665A1 (en) * 2016-05-26 2017-11-30 Tokyo Electron Limited Atomic layer etching systems and methods
US20180019298A1 (en) * 2016-07-18 2018-01-18 Raytheon Company METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
US20180047564A1 (en) * 2016-08-10 2018-02-15 GlobalFoundries, Inc. Method to tune contact cd and reduce mask count by tilted ion beam
US10002764B1 (en) * 2016-12-16 2018-06-19 Varian Semiconductor Equipment Associates, Inc. Sputter etch material selectivity
JP6812880B2 (ja) 2017-03-29 2021-01-13 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
JP7109165B2 (ja) * 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP7113711B2 (ja) * 2018-09-25 2022-08-05 東京エレクトロン株式会社 エッチング方法、エッチング装置、および記憶媒体
CN111696863B (zh) * 2019-03-15 2024-04-12 北京北方华创微电子装备有限公司 硅介质材料刻蚀方法
US11215934B2 (en) * 2020-01-21 2022-01-04 Applied Materials, Inc. In-situ light detection methods and apparatus for ultraviolet semiconductor substrate processing
US20210349017A1 (en) * 2020-05-08 2021-11-11 Caci, Inc. - Federal Systems and methods for detection of biological agents using infrared spectroscopy

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Cited By (10)

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Publication number Priority date Publication date Assignee Title
JP2015029072A (ja) * 2013-06-10 2015-02-12 エフ・イ−・アイ・カンパニー 電子ビーム誘起エッチング
US10304658B2 (en) 2013-06-10 2019-05-28 Fei Company Electron beam-induced etching
WO2016093087A1 (ja) * 2014-12-09 2016-06-16 東京エレクトロン株式会社 パターン形成方法、ガスクラスターイオンビーム照射装置及びパターン形成装置
JPWO2016093087A1 (ja) * 2014-12-09 2017-09-07 東京エレクトロン株式会社 パターン形成方法、ガスクラスターイオンビーム照射装置及びパターン形成装置
JP2017183534A (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 プラズマエッチングガス及びプラズマエッチング方法
JP2020515047A (ja) * 2016-12-30 2020-05-21 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造エッチング用ヨウ素含有化合物
JP7227135B2 (ja) 2016-12-30 2023-02-21 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体構造エッチング用ヨウ素含有化合物
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JP2023071504A (ja) * 2021-11-11 2023-05-23 東京エレクトロン株式会社 基板処理方法

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US9324567B2 (en) 2016-04-26
US20130309872A1 (en) 2013-11-21
TWI508166B (zh) 2015-11-11
TW201327666A (zh) 2013-07-01
KR20130025357A (ko) 2013-03-11
US20130059446A1 (en) 2013-03-07
US20130196509A1 (en) 2013-08-01
US8512586B2 (en) 2013-08-20

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