KR20130025357A - 복수의 재료에 대하여 타겟 에칭 프로세스 측정 기준을 달성하는 가스 클러스터 이온 빔 에칭 프로세스 - Google Patents

복수의 재료에 대하여 타겟 에칭 프로세스 측정 기준을 달성하는 가스 클러스터 이온 빔 에칭 프로세스 Download PDF

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Publication number
KR20130025357A
KR20130025357A KR1020120096825A KR20120096825A KR20130025357A KR 20130025357 A KR20130025357 A KR 20130025357A KR 1020120096825 A KR1020120096825 A KR 1020120096825A KR 20120096825 A KR20120096825 A KR 20120096825A KR 20130025357 A KR20130025357 A KR 20130025357A
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South Korea
Prior art keywords
gcib
etching
substrate
gas
etch
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KR1020120096825A
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English (en)
Korean (ko)
Inventor
마틴 디 타뱃
크리스토퍼 케이 올센
얀 샤오
루에어리디 맥크리몬
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텔 에피온 인크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
KR1020120096825A 2011-09-01 2012-08-31 복수의 재료에 대하여 타겟 에칭 프로세스 측정 기준을 달성하는 가스 클러스터 이온 빔 에칭 프로세스 Ceased KR20130025357A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/223,906 2011-09-01
US13/223,906 US8512586B2 (en) 2011-09-01 2011-09-01 Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials

Publications (1)

Publication Number Publication Date
KR20130025357A true KR20130025357A (ko) 2013-03-11

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Application Number Title Priority Date Filing Date
KR1020120096825A Ceased KR20130025357A (ko) 2011-09-01 2012-08-31 복수의 재료에 대하여 타겟 에칭 프로세스 측정 기준을 달성하는 가스 클러스터 이온 빔 에칭 프로세스

Country Status (4)

Country Link
US (3) US8512586B2 (https=)
JP (1) JP2013055336A (https=)
KR (1) KR20130025357A (https=)
TW (1) TWI508166B (https=)

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KR20160034491A (ko) * 2014-09-19 2016-03-30 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
KR20200010411A (ko) * 2017-05-30 2020-01-30 도쿄엘렉트론가부시키가이샤 에칭 방법
KR20200035213A (ko) * 2018-09-25 2020-04-02 도쿄엘렉트론가부시키가이샤 에칭 방법, 에칭 장치 및 기억 매체
US11342192B2 (en) 2017-03-29 2022-05-24 Tokyo Electron Limited Substrate processing method and storage medium

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US8512586B2 (en) * 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
US9123506B2 (en) * 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
US9209033B2 (en) * 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
CN105917438B (zh) * 2013-11-22 2018-04-24 Tel 艾派恩有限公司 分子束增强gcib处理
US9589853B2 (en) 2014-02-28 2017-03-07 Lam Research Corporation Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
US20150279686A1 (en) * 2014-03-31 2015-10-01 Taiwan Semiconductor Manufacturing Company Limited Semiconductor processing methods
KR102306979B1 (ko) * 2014-04-01 2021-09-30 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
CN107112186B (zh) * 2014-09-05 2020-04-21 Tel艾派恩有限公司 用于基片的射束处理的过程气体增强
KR20170093831A (ko) * 2014-12-09 2017-08-16 도쿄엘렉트론가부시키가이샤 패턴 형성 방법, 가스 클러스터 이온 빔 조사 장치 및 패턴 형성 장치
US9396995B1 (en) 2015-02-27 2016-07-19 Globalfoundries Inc. MOL contact metallization scheme for improved yield and device reliability
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US20170345665A1 (en) * 2016-05-26 2017-11-30 Tokyo Electron Limited Atomic layer etching systems and methods
US20180019298A1 (en) * 2016-07-18 2018-01-18 Raytheon Company METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
US20180047564A1 (en) * 2016-08-10 2018-02-15 GlobalFoundries, Inc. Method to tune contact cd and reduce mask count by tilted ion beam
US10002764B1 (en) * 2016-12-16 2018-06-19 Varian Semiconductor Equipment Associates, Inc. Sputter etch material selectivity
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
CN111696863B (zh) * 2019-03-15 2024-04-12 北京北方华创微电子装备有限公司 硅介质材料刻蚀方法
US11215934B2 (en) * 2020-01-21 2022-01-04 Applied Materials, Inc. In-situ light detection methods and apparatus for ultraviolet semiconductor substrate processing
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JP2023071504A (ja) * 2021-11-11 2023-05-23 東京エレクトロン株式会社 基板処理方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160034491A (ko) * 2014-09-19 2016-03-30 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
US11342192B2 (en) 2017-03-29 2022-05-24 Tokyo Electron Limited Substrate processing method and storage medium
KR20200010411A (ko) * 2017-05-30 2020-01-30 도쿄엘렉트론가부시키가이샤 에칭 방법
KR20200035213A (ko) * 2018-09-25 2020-04-02 도쿄엘렉트론가부시키가이샤 에칭 방법, 에칭 장치 및 기억 매체

Also Published As

Publication number Publication date
JP2013055336A (ja) 2013-03-21
US9324567B2 (en) 2016-04-26
US20130309872A1 (en) 2013-11-21
TWI508166B (zh) 2015-11-11
TW201327666A (zh) 2013-07-01
US20130059446A1 (en) 2013-03-07
US20130196509A1 (en) 2013-08-01
US8512586B2 (en) 2013-08-20

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