JP2013046063A5 - - Google Patents

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Publication number
JP2013046063A5
JP2013046063A5 JP2012171055A JP2012171055A JP2013046063A5 JP 2013046063 A5 JP2013046063 A5 JP 2013046063A5 JP 2012171055 A JP2012171055 A JP 2012171055A JP 2012171055 A JP2012171055 A JP 2012171055A JP 2013046063 A5 JP2013046063 A5 JP 2013046063A5
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JP
Japan
Prior art keywords
subassembly
aluminum nitride
nitride substrate
bulk aluminum
measurement unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012171055A
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English (en)
Japanese (ja)
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JP5833988B2 (ja
JP2013046063A (ja
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Publication date
Priority claimed from US13/217,821 external-priority patent/US8908161B2/en
Application filed filed Critical
Publication of JP2013046063A publication Critical patent/JP2013046063A/ja
Publication of JP2013046063A5 publication Critical patent/JP2013046063A5/ja
Application granted granted Critical
Publication of JP5833988B2 publication Critical patent/JP5833988B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012171055A 2011-08-25 2012-08-01 窒化アルミニウム部分の除去 Expired - Fee Related JP5833988B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/217,821 US8908161B2 (en) 2011-08-25 2011-08-25 Removing aluminum nitride sections
US13/217,821 2011-08-25

Publications (3)

Publication Number Publication Date
JP2013046063A JP2013046063A (ja) 2013-03-04
JP2013046063A5 true JP2013046063A5 (https=) 2015-09-17
JP5833988B2 JP5833988B2 (ja) 2015-12-16

Family

ID=46704547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012171055A Expired - Fee Related JP5833988B2 (ja) 2011-08-25 2012-08-01 窒化アルミニウム部分の除去

Country Status (3)

Country Link
US (1) US8908161B2 (https=)
EP (1) EP2562800A3 (https=)
JP (1) JP5833988B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
JP6426359B2 (ja) * 2014-03-24 2018-11-21 株式会社東芝 半導体発光素子及びその製造方法
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
US10468297B1 (en) * 2018-04-27 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-based etch-stop layer
CN114041205B (zh) * 2019-03-19 2025-07-29 动量光学公司 基底的热引导的化学蚀刻及其实时监测
JP2021131324A (ja) * 2020-02-20 2021-09-09 キオクシア株式会社 薄膜分析装置、及び、薄膜分析方法

Family Cites Families (21)

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US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5392124A (en) 1993-12-17 1995-02-21 International Business Machines Corporation Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control
TW312079B (https=) * 1994-06-06 1997-08-01 Ibm
US5739945A (en) 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
US5754294A (en) * 1996-05-03 1998-05-19 Virginia Semiconductor, Inc. Optical micrometer for measuring thickness of transparent wafers
FR2765347B1 (fr) 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6750152B1 (en) * 1999-10-01 2004-06-15 Delphi Technologies, Inc. Method and apparatus for electrically testing and characterizing formation of microelectric features
US6635573B2 (en) * 2001-10-29 2003-10-21 Applied Materials, Inc Method of detecting an endpoint during etching of a material within a recess
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
TWI234298B (en) 2003-11-18 2005-06-11 Itswell Co Ltd Semiconductor light emitting diode and method for manufacturing the same
ATE476687T1 (de) * 2003-12-19 2010-08-15 Ibm Differentielle metrologie für kritische abmessung und überlagerung
JP4622720B2 (ja) 2004-07-21 2011-02-02 日亜化学工業株式会社 窒化物半導体ウエハ又は窒化物半導体素子の製造方法
US20060285120A1 (en) * 2005-02-25 2006-12-21 Verity Instruments, Inc. Method for monitoring film thickness using heterodyne reflectometry and grating interferometry
US20080176149A1 (en) * 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
CN101918624A (zh) 2008-01-16 2010-12-15 国立大学法人东京农工大学 具有a1系ⅲ族氮化物单晶层的层叠体的制造方法、通过该制法制得的层叠体、使用该层叠体的a1系ⅲ族氮化物单晶基板的制造方法及氮化铝单晶基板
WO2010001804A1 (ja) * 2008-07-01 2010-01-07 住友電気工業株式会社 ＡｌxＧａ(1-x)Ｎ単結晶の製造方法、ＡｌxＧａ(1-x)Ｎ単結晶および光学部品
US7902047B2 (en) 2008-07-18 2011-03-08 The United States Of America As Represented By The United States Department Of Energy Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers
EP2253988A1 (en) * 2008-09-19 2010-11-24 Christie Digital Systems USA, Inc. A light integrator for more than one lamp

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