JP5833988B2 - 窒化アルミニウム部分の除去 - Google Patents

窒化アルミニウム部分の除去 Download PDF

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Publication number
JP5833988B2
JP5833988B2 JP2012171055A JP2012171055A JP5833988B2 JP 5833988 B2 JP5833988 B2 JP 5833988B2 JP 2012171055 A JP2012171055 A JP 2012171055A JP 2012171055 A JP2012171055 A JP 2012171055A JP 5833988 B2 JP5833988 B2 JP 5833988B2
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Japan
Prior art keywords
substrate
subassembly
light
aln
layer
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Expired - Fee Related
Application number
JP2012171055A
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English (en)
Japanese (ja)
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JP2013046063A5 (https=
JP2013046063A (ja
Inventor
ブレント・エス・クルーサー
クリストファー・エル・チュア
トーマス・ウンデラー
ノーブル・エム・ジョンソン
ボーエン・チェン
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Palo Alto Research Center Inc
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Palo Alto Research Center Inc
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Publication date
Application filed by Palo Alto Research Center Inc filed Critical Palo Alto Research Center Inc
Publication of JP2013046063A publication Critical patent/JP2013046063A/ja
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Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Weting (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2012171055A 2011-08-25 2012-08-01 窒化アルミニウム部分の除去 Expired - Fee Related JP5833988B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/217,821 2011-08-25
US13/217,821 US8908161B2 (en) 2011-08-25 2011-08-25 Removing aluminum nitride sections

Publications (3)

Publication Number Publication Date
JP2013046063A JP2013046063A (ja) 2013-03-04
JP2013046063A5 JP2013046063A5 (https=) 2015-09-17
JP5833988B2 true JP5833988B2 (ja) 2015-12-16

Family

ID=46704547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012171055A Expired - Fee Related JP5833988B2 (ja) 2011-08-25 2012-08-01 窒化アルミニウム部分の除去

Country Status (3)

Country Link
US (1) US8908161B2 (https=)
EP (1) EP2562800A3 (https=)
JP (1) JP5833988B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
JP6426359B2 (ja) * 2014-03-24 2018-11-21 株式会社東芝 半導体発光素子及びその製造方法
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
US10468297B1 (en) 2018-04-27 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-based etch-stop layer
WO2020191134A1 (en) * 2019-03-19 2020-09-24 Momentum Optics Thermally guided chemical etching of a substrate and real-time monitoring thereof
JP2021131324A (ja) * 2020-02-20 2021-09-09 キオクシア株式会社 薄膜分析装置、及び、薄膜分析方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5392124A (en) 1993-12-17 1995-02-21 International Business Machines Corporation Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control
TW312079B (https=) * 1994-06-06 1997-08-01 Ibm
US5739945A (en) 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
US5754294A (en) * 1996-05-03 1998-05-19 Virginia Semiconductor, Inc. Optical micrometer for measuring thickness of transparent wafers
FR2765347B1 (fr) 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6750152B1 (en) * 1999-10-01 2004-06-15 Delphi Technologies, Inc. Method and apparatus for electrically testing and characterizing formation of microelectric features
US6635573B2 (en) * 2001-10-29 2003-10-21 Applied Materials, Inc Method of detecting an endpoint during etching of a material within a recess
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
TWI234298B (en) 2003-11-18 2005-06-11 Itswell Co Ltd Semiconductor light emitting diode and method for manufacturing the same
DE60333688D1 (de) * 2003-12-19 2010-09-16 Ibm Differentielle metrologie für kritische abmessung und überlagerung
JP4622720B2 (ja) 2004-07-21 2011-02-02 日亜化学工業株式会社 窒化物半導体ウエハ又は窒化物半導体素子の製造方法
US20060285120A1 (en) * 2005-02-25 2006-12-21 Verity Instruments, Inc. Method for monitoring film thickness using heterodyne reflectometry and grating interferometry
US8092695B2 (en) * 2006-10-30 2012-01-10 Applied Materials, Inc. Endpoint detection for photomask etching
US20110018104A1 (en) 2008-01-16 2011-01-27 Toru Nagashima METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
EP2314738A4 (en) * 2008-07-01 2014-08-13 Sumitomo Electric Industries PROCESS FOR PREPARING AN ALXGA (1-X) N-CRYSTAL, ALXGA (1-X) N-CRYSTAL AND OPTICS
US7902047B2 (en) 2008-07-18 2011-03-08 The United States Of America As Represented By The United States Department Of Energy Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers
EP2253988A1 (en) 2008-09-19 2010-11-24 Christie Digital Systems USA, Inc. A light integrator for more than one lamp

Also Published As

Publication number Publication date
EP2562800A2 (en) 2013-02-27
EP2562800A3 (en) 2013-11-13
JP2013046063A (ja) 2013-03-04
US20130052758A1 (en) 2013-02-28
US8908161B2 (en) 2014-12-09

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