JP2013042172A - 半導体基板を洗浄する方法および装置 - Google Patents
半導体基板を洗浄する方法および装置 Download PDFInfo
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- JP2013042172A JP2013042172A JP2012242490A JP2012242490A JP2013042172A JP 2013042172 A JP2013042172 A JP 2013042172A JP 2012242490 A JP2012242490 A JP 2012242490A JP 2012242490 A JP2012242490 A JP 2012242490A JP 2013042172 A JP2013042172 A JP 2013042172A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 217
- 239000000758 substrate Substances 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 126
- 229920003023 plastic Polymers 0.000 claims abstract description 12
- 239000004033 plastic Substances 0.000 claims abstract description 12
- 239000011343 solid material Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 18
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 17
- 239000000194 fatty acid Substances 0.000 claims description 17
- 229930195729 fatty acid Natural products 0.000 claims description 17
- 150000004665 fatty acids Chemical class 0.000 claims description 17
- 239000000356 contaminant Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 235000021355 Stearic acid Nutrition 0.000 claims description 7
- -1 alkyl phosphates Chemical class 0.000 claims description 7
- 125000005600 alkyl phosphonate group Chemical group 0.000 claims description 7
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 claims description 7
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 7
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 7
- 239000008117 stearic acid Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 229910019142 PO4 Inorganic materials 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 6
- 235000021317 phosphate Nutrition 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 230000004913 activation Effects 0.000 abstract description 68
- 239000010410 layer Substances 0.000 description 49
- 239000000243 solution Substances 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 27
- 239000007790 solid phase Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 239000012071 phase Substances 0.000 description 17
- 238000011109 contamination Methods 0.000 description 14
- 239000004094 surface-active agent Substances 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 150000001735 carboxylic acids Chemical class 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 235000021314 Palmitic acid Nutrition 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical group [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- YWWVWXASSLXJHU-AATRIKPKSA-N (9E)-tetradecenoic acid Chemical compound CCCC\C=C\CCCCCCCC(O)=O YWWVWXASSLXJHU-AATRIKPKSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 239000002563 ionic surfactant Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- YWWVWXASSLXJHU-UHFFFAOYSA-N 9E-tetradecenoic acid Natural products CCCCC=CCCCCCCCC(O)=O YWWVWXASSLXJHU-UHFFFAOYSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021319 Palmitoleic acid Nutrition 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HXWJFEZDFPRLBG-UHFFFAOYSA-N Timnodonic acid Natural products CCCC=CC=CCC=CCC=CCC=CCCCC(O)=O HXWJFEZDFPRLBG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001299 aldehydes Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical group 0.000 description 1
- JAZBEHYOTPTENJ-JLNKQSITSA-N all-cis-5,8,11,14,17-icosapentaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O JAZBEHYOTPTENJ-JLNKQSITSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001408 amides Chemical group 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229920001222 biopolymer Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SECPZKHBENQXJG-UHFFFAOYSA-N cis-palmitoleic acid Natural products CCCCCCC=CCCCCCCCC(O)=O SECPZKHBENQXJG-UHFFFAOYSA-N 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229960005135 eicosapentaenoic acid Drugs 0.000 description 1
- 235000020673 eicosapentaenoic acid Nutrition 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- 150000002148 esters Chemical group 0.000 description 1
- 150000002170 ethers Chemical group 0.000 description 1
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- LQJBNNIYVWPHFW-QXMHVHEDSA-N gadoleic acid Chemical compound CCCCCCCCCC\C=C/CCCCCCCC(O)=O LQJBNNIYVWPHFW-QXMHVHEDSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012948 isocyanate Chemical group 0.000 description 1
- 150000002513 isocyanates Chemical group 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 150000002540 isothiocyanates Chemical group 0.000 description 1
- 150000002576 ketones Chemical group 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000002825 nitriles Chemical group 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000004713 phosphodiesters Chemical group 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003141 primary amines Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Chemical group 0.000 description 1
- 239000002888 zwitterionic surfactant Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0004—Non aqueous liquid compositions comprising insoluble particles
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0017—Multi-phase liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
- C11D3/14—Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/02—Compositions of detergents based essentially on soap on alkali or ammonium soaps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
- C23G1/18—Organic inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02041—Cleaning
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- H01L21/02052—Wet cleaning only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
【解決手段】基板を洗浄する方法が提供される。方法は、活性化溶液を基板の表面に塗布することから始まる。活性化溶液および基板の表面は、固体の洗浄表面の表面と接触する。活性化溶液は固体の洗浄要素の一部分の中に吸収され、次にダイ基板または固体の洗浄表面は、互いに対して動かされ、基板の表面を洗浄する。塑性変形を受ける固体の洗浄要素によって、基板の表面を洗浄する方法も提供される。対応する洗浄装置も提供される。
【選択図】図1B
Description
例えば、本願発明は以下の項目を提供する。
(項目1)
基板を洗浄する方法であって、該方法は、
活性化溶液を基板の表面に塗布する方法動作と、
該活性化溶液および該基板の表面を固体の洗浄要素の表面と接触させる方法動作と、
該活性化溶液を該固体の洗浄要素の一部分の中に吸収させる方法動作と、
該基板または該固体の洗浄要素のうちの1つを互いに対して動かし、該基板の表面を洗浄する方法動作と
を包含する、方法。
(項目2)
前記活性化溶液は、アルカリ性の溶液である、項目1に記載の方法。
(項目3)
前記活性化溶液は、水酸化アンモニウム、水酸化ナトリウム、水酸化カリウム、トリエタノールアミンおよび水酸化テトラメチルアンモニウムから成る群から選択される塩基を含むアルカリ性の溶液である、項目1に記載の方法。
(項目4)
前記固体の洗浄要素は、脂肪酸からなる平らな表面である、項目1に記載の方法。
(項目5)
前記固体の洗浄要素は、カルボン酸、スルホン酸およびホスホン酸からなる群から選択された成分から成る平らな表面である、項目1に記載の方法。
(項目6)
前記活性化溶液および前記基板の表面を前記固体の洗浄要素の表面と接触させる前記方法動作は、該固体の洗浄要素の表面のイオン化および該基板の表面のイオン化を生じる、項目1に記載の方法。
(項目7)
前記固体の洗浄要素は、スルホン酸アルキル、リン酸アルキルおよびホスホン酸アルキルからなる群から選択された成分から成る、項目1に記載の方法。
(項目8)
前記活性化溶液は、前記固体の洗浄要素の前記一部分の中に拡散し、該固体の洗浄要素の該一部分を該固体の洗浄要素の残りに対してより軟らかくさせる、項目1に記載の方法。
(項目9)
前記活性化溶液は界面活性剤である、項目1に記載の方法。
(項目10)
前記界面活性剤は、イオン界面活性剤である、項目9に記載の方法。
(項目11)
基板を洗浄する洗浄装置であって、
外面を有する固体の材料であって、該外面は、該基板の表面に配置された活性化溶液にさらされるとき、前記固体の材料の残りに対してより軟らかくなるように構成される、材料と、
該固体の材料を支持し、かつ力を及ぼして該外面が該基板の該表面と接触するように構成された支持構造と
を備えている、洗浄装置。
(項目12)
前記固体の材料は、脂肪酸、スルホン酸アルキル、リン酸アルキル、およびホスホン酸アルキルから成る群から選択される、項目11に記載の装置。
(項目13)
前記支持構造は、前記固体の材料の軸の中を通るシャフトを含み、該固体の材料は、該軸の周りに回転する、項目11に記載の装置。
(項目14)
前記支持構造はジンバル式であり、前記基板に対して、前記固体の材料に回転を提供する、項目11に記載の装置。
(項目15)
活性化溶液を前記基板の前記表面に提供する流体送達システムをさらに備えている、項目11に記載の装置。
(項目16)
前記活性化溶液はアルカリ性である、項目11に記載の装置。
(項目17)
前記活性化溶液は界面活性剤である、項目11に記載の装置。
(項目18)
前記外面の成分は前記活性化溶液によってイオン化され、該外面は平らな表面である、項目11に記載の装置。
(項目19)
基板を洗浄する洗浄システムであって、
該基板を支持するように構成された支持と、
活性化溶液を該基板の表面に送達するように構成された流体送達システムと、
露出された表面を有する固相の洗浄要素であって、該露出された表面は、該露出された表面が該活性化溶液と接するとき、該固相の洗浄要素の残り部分に対して軟らかくなる成分を有する、固相の洗浄要素と、
該固相の洗浄要素を支持する支持構造であって、該支持構造は洗浄動作の間、該基板の表面に対して該露出された表面を維持するように構成された、支持構造と
を備えている、洗浄システム。
(項目20)
前記固相の洗浄要素は本質的に脂肪酸から成る、項目19に記載の洗浄システム。
(項目21)
前記固相の洗浄要素は、スルホン酸アルキル、リン酸アルキル(alky,phosphate)およびホスホン酸アルキルからなる群から選択される材料である、項目19に記載の洗浄システム。
(項目22)
前記活性化溶液のpHは7.0よりも上である、項目19に記載の洗浄システム。
(項目23)
前記活性化溶液は界面活性剤である、項目19に記載の洗浄システム。
(項目24)
前記界面活性剤はドデシル硫酸アンモニウムである、項目23に記載の洗浄システム。
(項目25)
前記支持構造は、前記固相の洗浄要素を回転させるように構成された、項目19に記載の洗浄システム。
(項目26)
前記支持構造は、前記固相の洗浄要素を前記基板の表面に対して平行、垂直に移動させるように構成された、項目19に記載の洗浄システム。
(項目27)
前記支持構造は、前記固相の洗浄要素を動かないように保持する、項目19に記載の洗浄システム。
(項目28)
前記活性化溶液は露出された表面と反応して、前記基板の前記表面に対して前記固相の洗浄要素のゼラチン状の界面部分を成長させる、項目19に記載の洗浄システム。
(項目29)
前記ゼラチン状の界面部分は、前記基板の前記表面に配置された粒子を捕捉する、項目28に記載の洗浄システム。
(項目30)
複数の固相の洗浄要素であって、該複数の固相の洗浄要素は各々、異なる材料から成り、前記基板支持は、該複数の固相の洗浄要素の各々の下で該基板を動かし、前記流体送達システムは、該基板が該複数の固相の洗浄要素の各々の下で動く前に、該基板に前記活性化溶液を提供する、複数の固相の洗浄要素をさらに備えている、項目19に記載の洗浄システム。
(項目31)
基板を洗浄する方法であって、
基板表面を固体の洗浄要素の表面と接触させる方法動作と、
該固体の洗浄要素を該基板表面に対して押し付ける方法動作と、
該固体の洗浄要素または該基板のうちの1つを互いに対して動かす方法動作であって、該動かすことは、該固体の洗浄要素の該表面の塑性変形を引き起こし、それによって該固体の洗浄要素の層を該基板表面に堆積させる、方法動作と、
該固体の洗浄要素の層を該基板表面からすすぎ落とす方法動作と
を包含する、方法。
(項目32)
前記固体の洗浄要素の硬さは、前記基板の硬さを下回る、項目31に記載の方法。
(項目33)
アルカリ性の水溶液が、前記固体の洗浄要素の層を前記基板の表面からすすぎ落とすために使用される、項目31に記載の方法。
(項目34)
水、スルホン酸および過酸化水素の混合物が、前記固体の洗浄要素の層を前記基板の表面からすすぎ落とすために使用される、項目31に記載の方法。
(項目35)
前記固体の洗浄要素または前記基板のうちの1つを互いに対して動かす方法動作は、該固体の洗浄要素を前記基板表面に配置された汚染物質と相互作用させることを包含する、項目31に記載の方法。
(項目36)
基板を洗浄する洗浄装置であって、
外面を有する固体の材料であって、該外面は、該基板または該固体の材料のうちの1つが互いに対して動く間に、該固体の材料に及ぼされる下向きの力に応答して、塑性的に変形し、該基板に配置された膜を残すように構成された、材料と、
該固体の材料を支持し、該下向きの力を伝達するように構成された支持構造と
を備えている、洗浄装置。
(項目37)
前記固体の材料は、前記基板の硬さを下回る硬さを有し、該固体の材料は本質的に、ステアリン酸から成る、項目36に記載の装置。
(項目38)
前記基板に配置された前記膜をすすぎ落とす流体送達システムをさらに備えている、項目36に記載の装置。
(項目39)
前記固体の材料は本質的に脂肪酸から成る、項目36に記載の装置。
(項目40)
前記固体の材料は、スルホン酸アルキル、リン酸アルキル(alky,phosphate)、およびホスホン酸アルキルから成る群から選択される材料である、項目36に記載の装置。
以下の記述において、本発明の完全な理解を提供するために、多くの特定の詳細が述べられる。しかしながら、本発明がこれらの特定の詳細のうちの一部、またはすべてがなくても実行し得ることは、当業者には明らかである。他の例において、本発明を不必要に分かりにくくしないために、周知のプロセス動作は、詳細には記述されていない。
Claims (10)
- 基板を洗浄する方法であって、
該方法は、
基板表面を固体の洗浄要素の表面と接触させる方法動作と、
該固体の洗浄要素を該基板表面に対して押し付ける方法動作と、
該固体の洗浄要素または該基板のうちの1つを互いに対して動かす方法動作であって、該動かすことは、該固体の洗浄要素の該表面の塑性変形を引き起こし、それによって該固体の洗浄要素の層を該基板表面に堆積させる、方法動作と、
該固体の洗浄要素の層を該基板表面からすすぎ落とす方法動作と
を包含する、方法。 - 前記固体の洗浄要素の硬さは、前記基板の硬さを下回る、請求項1に記載の方法。
- アルカリ性の水溶液が、前記固体の洗浄要素の層を前記基板表面からすすぎ落とすために使用される、請求項1に記載の方法。
- 水、硫酸および過酸化水素の混合物が、前記固体の洗浄要素の層を前記基板表面からすすぎ落とすために使用される、請求項1に記載の方法。
- 前記固体の洗浄要素または前記基板のうちの1つを互いに対して動かす方法動作は、該固体の洗浄要素を前記基板表面に配置された汚染物質と相互作用させることを包含する、請求項1に記載の方法。
- 基板を洗浄する洗浄装置であって、
該洗浄装置は、
外面を有する固体の材料であって、該外面は、該基板または該固体の材料のうちの1つが互いに対して動く間に、該固体の材料に及ぼされる下向きの力に応答して、塑性的に変形し、該基板に配置された膜を残すように構成された、材料と、
該固体の材料を支持し、該下向きの力を伝達するように構成された支持構造と
を備えている、装置。 - 前記固体の材料は、前記基板の硬さを下回る硬さを有し、該固体の材料は本質的に、ステアリン酸から成る、請求項6に記載の装置。
- 前記基板に配置された前記膜をすすぎ落とす流体送達システムをさらに備えている、請求項6に記載の装置。
- 前記固体の材料は本質的に脂肪酸から成る、請求項6に記載の装置。
- 前記固体の材料は、スルホン酸アルキル、リン酸アルキル、およびホスホン酸アルキルから成る群から選択される材料である、請求項6に記載の装置。
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US11/612,352 US8316866B2 (en) | 2003-06-27 | 2006-12-18 | Method and apparatus for cleaning a semiconductor substrate |
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Patent Citations (1)
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JPH08500622A (ja) * | 1992-08-19 | 1996-01-23 | ロデール インコーポレーテッド | 高分子微小エレメントを含む高分子基材 |
Also Published As
Publication number | Publication date |
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US20130048021A1 (en) | 2013-02-28 |
KR20130042061A (ko) | 2013-04-25 |
WO2007079373A3 (en) | 2008-01-10 |
WO2007079373A2 (en) | 2007-07-12 |
US8591662B2 (en) | 2013-11-26 |
EP1965933A2 (en) | 2008-09-10 |
US8316866B2 (en) | 2012-11-27 |
JP5518163B2 (ja) | 2014-06-11 |
US20070084483A1 (en) | 2007-04-19 |
US20140059789A1 (en) | 2014-03-06 |
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