JP2013014505A - アルカリ金属酸化物を含有する光ファイバおよびその製造方法と装置 - Google Patents
アルカリ金属酸化物を含有する光ファイバおよびその製造方法と装置 Download PDFInfo
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- JP2013014505A JP2013014505A JP2012162715A JP2012162715A JP2013014505A JP 2013014505 A JP2013014505 A JP 2013014505A JP 2012162715 A JP2012162715 A JP 2012162715A JP 2012162715 A JP2012162715 A JP 2012162715A JP 2013014505 A JP2013014505 A JP 2013014505A
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- Prior art keywords
- core
- optical fiber
- glass
- alkali metal
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013307 optical fiber Substances 0.000 title claims abstract description 272
- 229910000272 alkali metal oxide Inorganic materials 0.000 title claims abstract description 171
- 238000000034 method Methods 0.000 title description 74
- 238000004519 manufacturing process Methods 0.000 title description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 176
- 238000005253 cladding Methods 0.000 claims abstract description 112
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 112
- 239000011737 fluorine Substances 0.000 claims abstract description 93
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 76
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000002019 doping agent Substances 0.000 claims abstract description 55
- 239000000203 mixture Substances 0.000 claims abstract description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000002585 base Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract description 5
- 239000011521 glass Substances 0.000 description 215
- 239000004071 soot Substances 0.000 description 114
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 90
- 239000000460 chlorine Substances 0.000 description 61
- 229910052801 chlorine Inorganic materials 0.000 description 58
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 55
- 239000000835 fiber Substances 0.000 description 52
- 239000003513 alkali Substances 0.000 description 37
- 239000007789 gas Substances 0.000 description 33
- 235000012239 silicon dioxide Nutrition 0.000 description 29
- 238000009792 diffusion process Methods 0.000 description 28
- 229910005793 GeO 2 Inorganic materials 0.000 description 27
- 239000006185 dispersion Substances 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 21
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 239000002131 composite material Substances 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 15
- 238000007596 consolidation process Methods 0.000 description 15
- 238000001035 drying Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 13
- 230000007423 decrease Effects 0.000 description 12
- 229910052734 helium Inorganic materials 0.000 description 12
- 239000001307 helium Substances 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 11
- 239000005373 porous glass Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- 229910052723 transition metal Inorganic materials 0.000 description 11
- 150000003624 transition metals Chemical class 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 229910052701 rubidium Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
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- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 230000008859 change Effects 0.000 description 5
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- 229910052792 caesium Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 3
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 3
- 229910001950 potassium oxide Inorganic materials 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
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- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052805 deuterium Inorganic materials 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- FZFYOUJTOSBFPQ-UHFFFAOYSA-M dipotassium;hydroxide Chemical compound [OH-].[K+].[K+] FZFYOUJTOSBFPQ-UHFFFAOYSA-M 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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Images
Classifications
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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Abstract
【解決手段】ゲルマニア、フッ素およびそれらの混合物からなる群より選択される第1のドーパントに加え、K2Oからなるアルカリ金属酸化物を含む第2のドーパントを、20から1000ppmのピーク濃度で有してなるシリカベースのコアとし、アルカリ金属酸化物の濃度を、光ファイバの半径により異ならせる。コアとクラッド内のアルカリ金属酸化物ドーパントの濃度を適切に選択することによって、前記コアが、前記クラッドに対して、0.2%より大きいピーク相対屈折率ΔMAXを持つ屈折率プロファイルを持たせる。
【選択図】なし
Description
− モードフィールド径は、単一モード光ファイバの端面に亘る光出力の尺度であり、
図11を参照して先に説明した方法にしたがって、K2Oドープ・ガラスコア・ロッドを形成した。図17に示したように、ガラスコア・ロッドは、ガウス曲線に類似の半径の関数としてのK2O濃度164を有した。曲線166は、純粋なシリカに関するガラスロッドの相対屈折率を示している。K2O拡散のための出発管は純粋な(未ドープの)シリカであった。コア・ロッドは、ロッドの中心線168辺りで約1質量%の最大値を持つK2O濃度164を有した。ロッドの外側部分に相当する部分171は、アルカリが実質的にドープされていないことが好ましい。特に、ドーピングは、ロッドの外側半分がアルカリの最低濃度を有し、内側半分が最高濃度を有するようなものである。より詳しくは、外側半分のアルカリドーパントのピーク濃度は、内側半分のアルカリドーパントのピーク濃度の好ましくは50%未満、より好ましくは25%未満である。
図11を参照して先に説明した方法にしたがって、Na2Oドープ・ガラスコア・ロッドを形成した。図18に示したように、ガラスコア・ロッドは、ガウス曲線に類似の半径の関数としてのNa2O濃度170を有した。曲線172は、純粋なシリカに関するガラスロッドの相対屈折率を示している。このロッドは、ロッドの中心線172辺りで約2質量%の最大値を持つNa2O濃度170を有した。
ここに開示し、図12に示した方法を用いて、シリカ管にK2Oをドープした。アルカリ金属供給源化合物110はKIであった。バーナ114を用いて、KIを約1100から1200℃の温度まで加熱した。アルカリ金属供給源化合物110が蒸発するまで、バーナ124を、順方向では約220mm/分の速度で、反対方向では約400mm/分の速度で、管106に沿って移動させた。リザーバ108を管106から切断し、管106をコラプスして第1のガラスロッドを形成した。第1のガラスロッドを、13時間に亘り49%のHF中でエッチングした。次いで、第1のガラスロッドを旋盤に配置し、シリカガラススートを従来の外付け気相成長法で第1のガラスロッド上に堆積させて、第1の複合ガラス物品を形成した。第1のガラス物品を、従来の固結ドーピングによって、固結させ、乾燥させ、Fドープし、次いで、線引きして第2のガラスロッドを形成した。第2のガラスロッドを、ロッドの直径に亘りマイクロプローブで測定した。図19は、第2のガラスロッドの直径に亘る、K2O(曲線176)、Cl(曲線178)およびF(曲線180)の濃度を示している。第2のガラスロッドを旋盤に配置し、追加のシリカスートを第2のガラスロッド上に堆積させて、第2の複合ガラス物品を形成した。第2のガラス物品を、従来の方法によって、固結し、乾燥させ、Fドープし、次いで、第3のガラスロッドを形成した。第3のガラスロッドを旋盤に配置し、従来の外付け気相成長法でシリカスートを第3のガラスロッド上に堆積させて、第4の複合ガラス物品を形成した。第4のガラス物品を、固結中に、固結し、Clガスで乾燥させ、Fドープして、光ファイバに線引きするための準備ができている光ファイバ・プリフォーム(線引きプリフォーム)を形成した。この光ファイバ線引きプリフォームを、70gのファイバ張力で7m/sで光ファイバに線引きした。この光ファイバは、1150nmのカットオフ波長(2メートル長のファイバで測定して)、および1550nmでの0.17dB/kmの減衰を有した。光ファイバのマイクロプローブ分析を行った。半径の関数としての光ファイバ中のドーパント濃度が図20に示されている。ここで、曲線182はK2Oの濃度を質量%で表し、曲線184はFの濃度を質量%で表している。
ガラス管にGeO2をドープすることによって、別の光ファイバを製造した。次いで、そのガラス管に、ここに記載した拡散方法によってK2Oをドープし、コラプスし、K2O−GeO2ドープ・ガラスロッドに線引きした。従来の外付け気相成長法でロッドにガラススートを堆積させることによってオーバークラッドし、次いで、従来のように固結して、光ファイバ線引きプリフォームを形成した。固結プロセス中に、オーバークラッドしたスートにFをドープした。線引きプリフォームを、コアに関するピーク相対屈折率%Δが約0.75%のステップ型屈折率のコアを有する単一モード光ファイバに線引きした。光ファイバのマイクロプローブ分析を行った。半径の関数としての光ファイバ中のドーパント濃度のプロットが図21に示されている。ここで、曲線186はK2Oの濃度を質量%で表し、曲線188はFの濃度を質量%で表し、曲線190はGeO2の濃度を質量%で表している。
本発明にしたがって、GeO2を含有するSiO2ガラス管にK2Oをドープした。この管を、往復運動しているH2/O2バーナの火炎により加熱することによってコラプスし、約15mmから17mmの直径を有する大きな直径の中実のガラスロッドを形成した。このバーナの火炎は、約1.5cm/分から2cm/分の速度で往復運動していた。火炎の温度は、約2150℃から2200℃の間であった。大きな直径のガラスロッドの外側を、49%のHF溶液中で約8時間に亘りエッチングして、ロッドの表面にあった不純物を除去した。大きな直径のガラスロッド中のK2Oのピーク量は、約1.5質量%から2質量%であった。大きな直径のガラスロッドは、純粋なシリカに対して、約0.35%から0.4%の相対屈折率を有した。次いで、大きな直径のガラスロッドを従来の線引き方法によって線引きして、約6mmの直径を有する小さな直径のガラスロッドを得た。この小さな直径のガラスロッドを多数のセクションに切断した。ガラススートを標的またはベイト・ロッド上に堆積させる外付け気相成長法によって、多孔質ガラススートコア・プリフォームを製造した。この多孔質ガラススートコア・プリフォームは、コアガラススートおよびクラッドガラススートの少なくとも一部分を含んでいた。多孔質スート・プリフォームが一旦形成されたら、標的ロッドを取り外し、プリフォームの中心線に沿って孔を残した。K2OおよびGeO2を有してなる小さな直径のガラスロッドをこの多孔質ガラススート・プリフォームの中心孔中に挿入して、第1の複合プリフォームを形成した。次いで、第1の複合プリフォームを従来の固結炉内で固結して、固結したコア・プリフォームを形成した。固結したコア・プリフォームを従来の予備線引き炉内で線引きして、第2のガラスコアロッドを形成した。第2のガラスコアロッドを多数のセクションに切断した。第1のコアロッド・セクションをガラス形成旋盤に配置し、追加のクラッド・ガラススートを第1のコアロッド上に堆積させて、第2の複合プリフォームを形成した。第2の複合プリフォームを従来の固結炉内で固結し、固結した線引きプリフォームを形成した。次いで、線引きプリフォームを従来の方法によって光ファイバに線引きして、K2OおよびGeO2がドープされたコアを有する光ファイバを形成した。残りのダイのガラスコア・ロッドの各セクションを同様の様式で加工して、線引きプリフォームを得て、これらの線引きプリフォームを光ファイバに線引きした。これらの光ファイバを、EIA/TIA FOTP−78によるスペクトル減衰測定および光パルス反射波時間領域測定(ODTR)EIA/TIA FOTP−60の両方を使用して、光学損失(減衰)について測定した。測定結果が以下の表1に与えられている。表1において、MFDは1310nmの波長で測定した光ファイバのモードフィールド径を表し、ファイバのカットオフ波長は、EIA/TIA FOTP−80にしたがって、2メートル長のファイバについて測定したカットオフ波長である。
ここに開示した方法にしたがって、第1のシリカガラス管にRb2Oをドープした。管を加熱し、コラプスして、中実のガラスコアロッドを形成した。第2のシリカガラス管も、ここに開示した方法にしたがって、Cs2Oをドープした。第2のガラスロッドをさらに加熱し、コラプスして、Cs2Oがドープされた第2の中実ガラスコアロッドを形成した。Rb2Oドープ・ガラスコアロッドおよびCs2Oドープ・ガラスコアロッドの両方を、各ガラスロッドの中心線近くのガラスロッドの直径の一部分に亘って電子マイクロプローブで測定した。各ガラスロッドの直径に亘り測定したRb2OおよびCs2Oの濃度が、それぞれ、図22および図23に示されている。図22において、曲線192はガラスコアロッドの直径の一部分に亘るRb2Oの濃度を表し、曲線194はFの濃度を表している。図22において、曲線196はガラスコアロッドの直径の一部分に亘るCs2Oの濃度を表し、曲線198はFの濃度を表している。
前出の参考例3からのコアロッドを用いて、光ファイバを製造した。この光ファイバは、図24に示すような、屈折率プロファイルおよびK2O濃度を有していた。図24において、曲線200はコアの屈折率プロファイルを表し、曲線202は半径の関数としてのK2Oの濃度を表している。この光ファイバは、光パルス反射波領域測定(OTDR)により測定したときの1550nmで0.1827dB/kmの減衰、および1310nmでの9.52μmのモードフィールド径を有した。この光ファイバは、約1519nmのカットオフ波長、1308.2nmのゼロ分散波長、および0.088ps/nm2/kmのゼロ分散波長での分散スロープを有した。この光ファイバは、150gのファイバ張力および10m/sの線引き速度で線引きした。
図31は、図25により示された方法にしたがって製造された、ここに開示された第1組の好ましい光ファイバの実施の形態に属する光ファイバの相対屈折率プロファイルを示している。ΔMAX=0.41%、半値全幅(HHPW)が4.4μm、Rコア=7.1μm、およびクラッドは62.5μmの半径まで延在する。拡散尾部は、クラッド中に7.1μmから約22μmまで延在する。
図33は、実施例3(図31により表される)のファイバにおけるK2Oの濃度プロファイルおよびK2Oドーパントプロファイルを除いて実施例3に一般的に類似した実施例4、比較例2、3の光ファイバにおけるK2Oの濃度プロファイルを示している。表4は、実施例3、4、比較例2、3に関する、K2Oプロファイルのピーク濃度および半値全幅並びに1550nmでの対応して測定した減衰を列記している。比較例3は、最低のK2Oピーク、最低のK2Oプロファイル、および最高の減衰を有した。K2Oの存在による減衰の減少は、約20ppm未満のピークK2O濃度について、次第に減少したことが分かった。
図34は、図26により示された方法にしたがって製造された、ここに開示された第2組の好ましい光ファイバの実施の形態に属する光ファイバの相対屈折率プロファイルを示している。ΔMAX=0.33%、半値全幅(HHPW)が4.4μm、Rコア=4.7μm、およびクラッドは62.5μmの半径まで延在する。コア中のK2Oの平均濃度は250ppmである。
ここに開示された第2組の好ましい実施の形態に属する追加の代表的な光ファイバを図26に示した方法にしたがって製造した。この光ファイバは、図34に類似の屈折率プロファイルを有する。コア中のK2O濃度が高い比較のための光ファイバの参考例11も製造し、測定した。
Claims (1)
- ゲルマニア、フッ素およびそれらの混合物からなる群より選択される第1のドーパントと、K2Oからなるアルカリ金属酸化物を含む第2のドーパントを、20から1000ppmのピーク濃度で有してなるシリカベースのコア、および
前記コアを取り囲みかつ直接隣接したシリカベースのクラッド、
を有してなる光ファイバであって、
前記コアが、前記クラッドに対して、0.2%より大きいピーク相対屈折率ΔMAXを持つ屈折率プロファイルを有する光ファイバ。
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- 2004-08-27 JP JP2006524928A patent/JP2007504080A/ja active Pending
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- 2004-08-27 US US10/929,142 patent/US8798412B2/en active Active
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2018517943A (ja) * | 2015-07-31 | 2018-07-05 | 長飛光繊光纜股▲ふん▼有限公司 | 極低損失でベンド不敏感の単一モード光ファイバ |
Also Published As
Publication number | Publication date |
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JP2013006764A (ja) | 2013-01-10 |
WO2005021455A3 (en) | 2005-09-01 |
JP5722838B2 (ja) | 2015-05-27 |
KR101066281B1 (ko) | 2011-09-20 |
EP1663890A2 (en) | 2006-06-07 |
US20050063663A1 (en) | 2005-03-24 |
KR20060123712A (ko) | 2006-12-04 |
JP2007504080A (ja) | 2007-03-01 |
US20150316712A1 (en) | 2015-11-05 |
WO2005021455A2 (en) | 2005-03-10 |
JP5706374B2 (ja) | 2015-04-22 |
EP1663890B1 (en) | 2020-09-23 |
US8798412B2 (en) | 2014-08-05 |
US9250386B2 (en) | 2016-02-02 |
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