JP2013004685A5 - - Google Patents
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- Publication number
- JP2013004685A5 JP2013004685A5 JP2011133539A JP2011133539A JP2013004685A5 JP 2013004685 A5 JP2013004685 A5 JP 2013004685A5 JP 2011133539 A JP2011133539 A JP 2011133539A JP 2011133539 A JP2011133539 A JP 2011133539A JP 2013004685 A5 JP2013004685 A5 JP 2013004685A5
- Authority
- JP
- Japan
- Prior art keywords
- solid
- manufacturing
- imaging device
- state imaging
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011133539A JP2013004685A (ja) | 2011-06-15 | 2011-06-15 | 固体撮像装置の製造方法 |
| US13/477,665 US8809094B2 (en) | 2011-06-15 | 2012-05-22 | Method of manufacturing solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011133539A JP2013004685A (ja) | 2011-06-15 | 2011-06-15 | 固体撮像装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013004685A JP2013004685A (ja) | 2013-01-07 |
| JP2013004685A5 true JP2013004685A5 (enExample) | 2014-07-31 |
Family
ID=47353974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011133539A Pending JP2013004685A (ja) | 2011-06-15 | 2011-06-15 | 固体撮像装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8809094B2 (enExample) |
| JP (1) | JP2013004685A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6190175B2 (ja) * | 2013-06-19 | 2017-08-30 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP6465545B2 (ja) * | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
| JP6346826B2 (ja) * | 2014-08-06 | 2018-06-20 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| KR102666282B1 (ko) * | 2017-12-12 | 2024-05-14 | 르파운드리 에스.알.엘. | 가시광선 및 자외선 검출을 위한 반도체 광학 센서 및 그 제조 공정 |
| CN114400235B (zh) * | 2022-01-16 | 2024-09-13 | Nano科技(北京)有限公司 | 一种背照射光探测阵列结构及其制备方法 |
| US20230411540A1 (en) * | 2022-06-16 | 2023-12-21 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of making |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235313A (ja) | 1992-02-25 | 1993-09-10 | Sony Corp | 受光素子 |
| JPH08203894A (ja) * | 1995-01-30 | 1996-08-09 | Sony Corp | 半導体装置の製造方法 |
| US7442973B2 (en) * | 2002-12-13 | 2008-10-28 | Sony Corporation | Solid-state imaging device and production method therefor |
| JP4427949B2 (ja) | 2002-12-13 | 2010-03-10 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP2004221487A (ja) * | 2003-01-17 | 2004-08-05 | Sharp Corp | 半導体装置の製造方法及び半導体装置 |
| JP2005340498A (ja) * | 2004-05-27 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
| JP2006049825A (ja) * | 2004-07-08 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
| JP2006191000A (ja) * | 2004-12-08 | 2006-07-20 | Canon Inc | 光電変換装置 |
| JP2006261247A (ja) * | 2005-03-15 | 2006-09-28 | Canon Inc | 固体撮像素子およびその製造方法 |
| JP2007200961A (ja) * | 2006-01-24 | 2007-08-09 | Sharp Corp | 半導体装置およびその製造方法 |
| JP2007305690A (ja) | 2006-05-09 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 固体撮像装置用素子及びその製造方法 |
| JP2008091771A (ja) | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
-
2011
- 2011-06-15 JP JP2011133539A patent/JP2013004685A/ja active Pending
-
2012
- 2012-05-22 US US13/477,665 patent/US8809094B2/en not_active Expired - Fee Related
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