JP2013004685A - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP2013004685A
JP2013004685A JP2011133539A JP2011133539A JP2013004685A JP 2013004685 A JP2013004685 A JP 2013004685A JP 2011133539 A JP2011133539 A JP 2011133539A JP 2011133539 A JP2011133539 A JP 2011133539A JP 2013004685 A JP2013004685 A JP 2013004685A
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JP
Japan
Prior art keywords
imaging device
solid
state imaging
insulating film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011133539A
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English (en)
Japanese (ja)
Other versions
JP2013004685A5 (enExample
Inventor
Hideomi Kumano
秀臣 熊野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011133539A priority Critical patent/JP2013004685A/ja
Priority to US13/477,665 priority patent/US8809094B2/en
Publication of JP2013004685A publication Critical patent/JP2013004685A/ja
Publication of JP2013004685A5 publication Critical patent/JP2013004685A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2011133539A 2011-06-15 2011-06-15 固体撮像装置の製造方法 Pending JP2013004685A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011133539A JP2013004685A (ja) 2011-06-15 2011-06-15 固体撮像装置の製造方法
US13/477,665 US8809094B2 (en) 2011-06-15 2012-05-22 Method of manufacturing solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011133539A JP2013004685A (ja) 2011-06-15 2011-06-15 固体撮像装置の製造方法

Publications (2)

Publication Number Publication Date
JP2013004685A true JP2013004685A (ja) 2013-01-07
JP2013004685A5 JP2013004685A5 (enExample) 2014-07-31

Family

ID=47353974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011133539A Pending JP2013004685A (ja) 2011-06-15 2011-06-15 固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US8809094B2 (enExample)
JP (1) JP2013004685A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015005578A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP2016039192A (ja) * 2014-08-06 2016-03-22 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6465545B2 (ja) * 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
US11581350B2 (en) * 2017-12-12 2023-02-14 Lfoundry S.R.L. Semiconductor optical sensor for visible and ultraviolet light detection and corresponding manufacturing process
CN114400235B (zh) * 2022-01-16 2024-09-13 Nano科技(北京)有限公司 一种背照射光探测阵列结构及其制备方法
US20230411540A1 (en) * 2022-06-16 2023-12-21 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of making

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203894A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
JP2005340498A (ja) * 2004-05-27 2005-12-08 Matsushita Electric Ind Co Ltd 固体撮像素子
JP2006049825A (ja) * 2004-07-08 2006-02-16 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP2006191000A (ja) * 2004-12-08 2006-07-20 Canon Inc 光電変換装置
JP2006261247A (ja) * 2005-03-15 2006-09-28 Canon Inc 固体撮像素子およびその製造方法
JP2007200961A (ja) * 2006-01-24 2007-08-09 Sharp Corp 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235313A (ja) 1992-02-25 1993-09-10 Sony Corp 受光素子
KR20110015473A (ko) 2002-12-13 2011-02-15 소니 주식회사 고체 촬상 소자 및 그 제조방법
JP4427949B2 (ja) 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
JP2004221487A (ja) * 2003-01-17 2004-08-05 Sharp Corp 半導体装置の製造方法及び半導体装置
JP2007305690A (ja) 2006-05-09 2007-11-22 Matsushita Electric Ind Co Ltd 固体撮像装置用素子及びその製造方法
JP2008091771A (ja) 2006-10-04 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203894A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
JP2005340498A (ja) * 2004-05-27 2005-12-08 Matsushita Electric Ind Co Ltd 固体撮像素子
JP2006049825A (ja) * 2004-07-08 2006-02-16 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP2006191000A (ja) * 2004-12-08 2006-07-20 Canon Inc 光電変換装置
JP2006261247A (ja) * 2005-03-15 2006-09-28 Canon Inc 固体撮像素子およびその製造方法
JP2007200961A (ja) * 2006-01-24 2007-08-09 Sharp Corp 半導体装置およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015005578A (ja) * 2013-06-19 2015-01-08 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
US9601533B2 (en) 2013-06-19 2017-03-21 Canon Kabushiki Kaisha Solid-state imaging apparatus, method of manufacturing the same, and camera
JP2016039192A (ja) * 2014-08-06 2016-03-22 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
US20120322196A1 (en) 2012-12-20
US8809094B2 (en) 2014-08-19

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