JP2012519394A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012519394A5 JP2012519394A5 JP2011553052A JP2011553052A JP2012519394A5 JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5 JP 2011553052 A JP2011553052 A JP 2011553052A JP 2011553052 A JP2011553052 A JP 2011553052A JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- region
- top surface
- item
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 23
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15671009P | 2009-03-02 | 2009-03-02 | |
| US61/156,710 | 2009-03-02 | ||
| US18453509P | 2009-06-05 | 2009-06-05 | |
| US61/184,535 | 2009-06-05 | ||
| PCT/US2010/025959 WO2010101946A1 (en) | 2009-03-02 | 2010-03-02 | DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014166443A Division JP2014220531A (ja) | 2009-03-02 | 2014-08-19 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012519394A JP2012519394A (ja) | 2012-08-23 |
| JP2012519394A5 true JP2012519394A5 (https=) | 2013-04-18 |
| JP5739824B2 JP5739824B2 (ja) | 2015-06-24 |
Family
ID=42666641
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011553052A Expired - Fee Related JP5739824B2 (ja) | 2009-03-02 | 2010-03-02 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
| JP2014166443A Withdrawn JP2014220531A (ja) | 2009-03-02 | 2014-08-19 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014166443A Withdrawn JP2014220531A (ja) | 2009-03-02 | 2014-08-19 | 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8795430B2 (https=) |
| EP (1) | EP2404312A4 (https=) |
| JP (2) | JP5739824B2 (https=) |
| KR (1) | KR20110129444A (https=) |
| CN (1) | CN102449737A (https=) |
| TW (1) | TW201044444A (https=) |
| WO (1) | WO2010101946A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9404197B2 (en) * | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| WO2011109754A1 (en) * | 2010-03-04 | 2011-09-09 | The Regents Of The University Of California | Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction |
| US8445890B2 (en) * | 2010-03-09 | 2013-05-21 | Micron Technology, Inc. | Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing |
| US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| JP2013544027A (ja) | 2010-10-26 | 2013-12-09 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 基板およびエピ層パターン化によるｉｉｉ族窒化物ヘテロ構造歪み緩和制限 |
| US9236530B2 (en) * | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
| US8772758B2 (en) | 2011-05-13 | 2014-07-08 | The Regents Of The University Of California | Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N |
| US9209358B2 (en) | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
| PL228006B1 (pl) * | 2015-09-23 | 2018-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Dioda superluminescencyjna na bazie stopu AlInGaN |
| CN106784181B (zh) * | 2016-12-14 | 2020-06-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高绿光或更长波长InGaN量子阱发光效率的方法及结构 |
| CN107068817B (zh) * | 2017-04-18 | 2019-05-10 | 湘能华磊光电股份有限公司 | Led外延生长方法 |
| JPWO2020017207A1 (ja) * | 2018-07-20 | 2021-08-02 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子 |
| CN110211865B (zh) * | 2019-05-15 | 2020-12-15 | 中国电子科技集团公司第五十五研究所 | 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法 |
| US11195973B1 (en) * | 2019-05-17 | 2021-12-07 | Facebook Technologies, Llc | III-nitride micro-LEDs on semi-polar oriented GaN |
| FR3098992B1 (fr) * | 2019-07-18 | 2023-01-13 | Aledia | Diode électroluminescente et procédé de fabrication |
| US11175447B1 (en) | 2019-08-13 | 2021-11-16 | Facebook Technologies, Llc | Waveguide in-coupling using polarized light emitting diodes |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| KR101086155B1 (ko) * | 2002-12-16 | 2011-11-25 | 독립행정법인 과학기술진흥기구 | 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장 |
| EP1658142B2 (en) * | 2003-08-18 | 2014-10-22 | Nordson Corporation | Spray applicator for particulate material |
| US7504274B2 (en) * | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
| JP4696285B2 (ja) * | 2005-02-25 | 2011-06-08 | 京セラ株式会社 | Ｒ面サファイア基板とそれを用いたエピタキシャル基板及び半導体装置、並びにその製造方法 |
| KR101145755B1 (ko) * | 2005-03-10 | 2012-05-16 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | 평면의 반극성 갈륨 질화물의 성장을 위한 기술 |
| TWI490918B (zh) * | 2006-01-20 | 2015-07-01 | 美國加利福尼亞大學董事會 | 半極性氮化（鋁，銦，鎵，硼）之改良成長方法 |
| JP5684455B2 (ja) * | 2006-02-10 | 2015-03-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法 |
| JP2007227803A (ja) * | 2006-02-24 | 2007-09-06 | Kyocera Corp | 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置 |
| JP2007243006A (ja) * | 2006-03-10 | 2007-09-20 | Kyocera Corp | 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置 |
| WO2007133603A2 (en) * | 2006-05-09 | 2007-11-22 | The Regents Of The University Of California | In-situ defect reduction techniques for nonpolar and semipolar (ai, ga, in)n |
| AU2007278831B2 (en) | 2006-07-28 | 2013-03-21 | The Trustees Of The University Of Pennsylvania | Improved vaccines and methods for using the same |
| JP2008109066A (ja) * | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | 発光素子 |
| WO2008067537A2 (en) * | 2006-11-30 | 2008-06-05 | University Of South Carolina | Method and apparatus for growth of iii-nitride semiconductor epitaxial layers |
| JP2008235802A (ja) * | 2007-03-23 | 2008-10-02 | Rohm Co Ltd | 発光装置 |
| WO2009005894A2 (en) * | 2007-05-08 | 2009-01-08 | Nitek, Inc. | Non-polar ultraviolet light emitting device and method for fabricating same |
| US20080296626A1 (en) * | 2007-05-30 | 2008-12-04 | Benjamin Haskell | Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same |
| US8158497B2 (en) * | 2007-06-15 | 2012-04-17 | The Regents Of The University Of California | Planar nonpolar m-plane group III nitride films grown on miscut substrates |
| WO2009021201A1 (en) * | 2007-08-08 | 2009-02-12 | The Regents Of The University Of California | Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
| CN100532638C (zh) | 2008-05-16 | 2009-08-26 | 南京大学 | 生长非极性面GaN薄膜材料的方法及其用途 |
-
2010
- 2010-03-02 US US12/716,176 patent/US8795430B2/en not_active Expired - Fee Related
- 2010-03-02 CN CN2010800100512A patent/CN102449737A/zh active Pending
- 2010-03-02 TW TW099105996A patent/TW201044444A/zh unknown
- 2010-03-02 JP JP2011553052A patent/JP5739824B2/ja not_active Expired - Fee Related
- 2010-03-02 KR KR1020117022867A patent/KR20110129444A/ko not_active Ceased
- 2010-03-02 WO PCT/US2010/025959 patent/WO2010101946A1/en not_active Ceased
- 2010-03-02 EP EP10749224.1A patent/EP2404312A4/en not_active Withdrawn
-
2014
- 2014-06-24 US US14/313,691 patent/US20140308769A1/en not_active Abandoned
- 2014-08-19 JP JP2014166443A patent/JP2014220531A/ja not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012519394A5 (https=) | ||
| Kim et al. | Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution | |
| Inoue et al. | Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure | |
| Cuong et al. | Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning | |
| Jung et al. | Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region | |
| Kwon et al. | Enhanced emission efficiency of GaN∕ InGaN multiple quantum well light-emitting diode with an embedded photonic crystal | |
| US8816374B2 (en) | Light emitting diode with graphene layer | |
| US9240517B2 (en) | Strain relief superlattices and optoelectronic devices including the same | |
| TWI650879B (zh) | 半導體發光元件用基板及半導體發光元件以及該等之製造方法 | |
| JP2016129266A5 (https=) | ||
| US8823044B2 (en) | Light emitting diode with graphene layer | |
| JP2010536181A5 (https=) | ||
| WO2013022365A1 (en) | Light emitting diode with nanostructured layer and methods of making and using | |
| CN103311397B (zh) | 通过压力缓降生长改进的LED的p‑GaN层 | |
| Kataria et al. | Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon | |
| Huang et al. | High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate | |
| Quan et al. | High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes | |
| Lee et al. | GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission | |
| FR3044464A1 (fr) | Procede permettant d'obtenir sur un substrat cristallin une couche semi-polaire de nitrure | |
| JP4806112B1 (ja) | 発光ダイオード | |
| Kim et al. | Effect of periodic deflector embedded in InGaN∕ GaN light emitting diode | |
| CN205621763U (zh) | 一种半导体器件 | |
| Wang et al. | Fabrication and optical investigation of a high-density GaN nanowire array | |
| Deng et al. | InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates | |
| Huang et al. | Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography |