CN102449737A - 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置 - Google Patents

生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置 Download PDF

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CN102449737A
CN102449737A CN2010800100512A CN201080010051A CN102449737A CN 102449737 A CN102449737 A CN 102449737A CN 2010800100512 A CN2010800100512 A CN 2010800100512A CN 201080010051 A CN201080010051 A CN 201080010051A CN 102449737 A CN102449737 A CN 102449737A
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film
polar
plane
substrate
growth
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罗伯特·M·法雷尔
迈克尔·伊萨
詹姆斯·S·斯佩克
史蒂文·P·登巴尔斯
中村秀治
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University of California San Diego UCSD
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University of California San Diego UCSD
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2010800100512A 2009-03-02 2010-03-02 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置 Pending CN102449737A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15671009P 2009-03-02 2009-03-02
US61/156,710 2009-03-02
US18453509P 2009-06-05 2009-06-05
US61/184,535 2009-06-05
PCT/US2010/025959 WO2010101946A1 (en) 2009-03-02 2010-03-02 DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

Publications (1)

Publication Number Publication Date
CN102449737A true CN102449737A (zh) 2012-05-09

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CN2010800100512A Pending CN102449737A (zh) 2009-03-02 2010-03-02 生长于非极性或半极性(Ga，Al，In，B)N衬底上的装置

Country Status (7)

Country Link
US (2) US8795430B2 (https=)
EP (1) EP2404312A4 (https=)
JP (2) JP5739824B2 (https=)
KR (1) KR20110129444A (https=)
CN (1) CN102449737A (https=)
TW (1) TW201044444A (https=)
WO (1) WO2010101946A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784181A (zh) * 2016-12-14 2017-05-31 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
CN107068817A (zh) * 2017-04-18 2017-08-18 湘能华磊光电股份有限公司 Led外延生长方法
WO2020228164A1 (zh) * 2019-05-15 2020-11-19 中国电子科技集团公司第五十五研究所 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
WO2011109754A1 (en) * 2010-03-04 2011-09-09 The Regents Of The University Of California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction
US8445890B2 (en) * 2010-03-09 2013-05-21 Micron Technology, Inc. Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
JP2013544027A (ja) 2010-10-26 2013-12-09 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 基板およびエピ層パターン化によるｉｉｉ族窒化物ヘテロ構造歪み緩和制限
US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US8772758B2 (en) 2011-05-13 2014-07-08 The Regents Of The University Of California Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
US9209358B2 (en) 2011-12-14 2015-12-08 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
PL228006B1 (pl) * 2015-09-23 2018-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Dioda superluminescencyjna na bazie stopu AlInGaN
JPWO2020017207A1 (ja) * 2018-07-20 2021-08-02 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
FR3098992B1 (fr) * 2019-07-18 2023-01-13 Aledia Diode électroluminescente et procédé de fabrication
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060029832A1 (en) * 2001-06-08 2006-02-09 Xueping Xu High surface quality GaN wafer and method of fabricating same
US20070111488A1 (en) * 2004-05-10 2007-05-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US20070184637A1 (en) * 2004-06-03 2007-08-09 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
CN101138091A (zh) * 2005-03-10 2008-03-05 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
CN101270471A (zh) * 2008-05-16 2008-09-24 南京大学 生长非极性面GaN薄膜材料的方法及其用途

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
EP1658142B2 (en) * 2003-08-18 2014-10-22 Nordson Corporation Spray applicator for particulate material
JP4696285B2 (ja) * 2005-02-25 2011-06-08 京セラ株式会社 Ｒ面サファイア基板とそれを用いたエピタキシャル基板及び半導体装置、並びにその製造方法
TWI490918B (zh) * 2006-01-20 2015-07-01 美國加利福尼亞大學董事會 半極性氮化（鋁，銦，鎵，硼）之改良成長方法
JP5684455B2 (ja) * 2006-02-10 2015-03-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法
JP2007227803A (ja) * 2006-02-24 2007-09-06 Kyocera Corp 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
WO2007133603A2 (en) * 2006-05-09 2007-11-22 The Regents Of The University Of California In-situ defect reduction techniques for nonpolar and semipolar (ai, ga, in)n
AU2007278831B2 (en) 2006-07-28 2013-03-21 The Trustees Of The University Of Pennsylvania Improved vaccines and methods for using the same
JP2008109066A (ja) * 2006-09-29 2008-05-08 Rohm Co Ltd 発光素子
WO2008067537A2 (en) * 2006-11-30 2008-06-05 University Of South Carolina Method and apparatus for growth of iii-nitride semiconductor epitaxial layers
JP2008235802A (ja) * 2007-03-23 2008-10-02 Rohm Co Ltd 発光装置
WO2009005894A2 (en) * 2007-05-08 2009-01-08 Nitek, Inc. Non-polar ultraviolet light emitting device and method for fabricating same
US20080296626A1 (en) * 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same
US8158497B2 (en) * 2007-06-15 2012-04-17 The Regents Of The University Of California Planar nonpolar m-plane group III nitride films grown on miscut substrates
WO2009021201A1 (en) * 2007-08-08 2009-02-12 The Regents Of The University Of California Planar nonpolar m-plane group iii-nitride films grown on miscut substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060029832A1 (en) * 2001-06-08 2006-02-09 Xueping Xu High surface quality GaN wafer and method of fabricating same
US20070111488A1 (en) * 2004-05-10 2007-05-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US20070184637A1 (en) * 2004-06-03 2007-08-09 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
CN101138091A (zh) * 2005-03-10 2008-03-05 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
CN101270471A (zh) * 2008-05-16 2008-09-24 南京大学 生长非极性面GaN薄膜材料的方法及其用途

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784181A (zh) * 2016-12-14 2017-05-31 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
CN107068817A (zh) * 2017-04-18 2017-08-18 湘能华磊光电股份有限公司 Led外延生长方法
CN107068817B (zh) * 2017-04-18 2019-05-10 湘能华磊光电股份有限公司 Led外延生长方法
WO2020228164A1 (zh) * 2019-05-15 2020-11-19 中国电子科技集团公司第五十五研究所 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法

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JP2014220531A (ja) 2014-11-20
US20140308769A1 (en) 2014-10-16
EP2404312A4 (en) 2013-10-02
EP2404312A1 (en) 2012-01-11
WO2010101946A1 (en) 2010-09-10
KR20110129444A (ko) 2011-12-01
TW201044444A (en) 2010-12-16
US8795430B2 (en) 2014-08-05
US20100219416A1 (en) 2010-09-02
JP5739824B2 (ja) 2015-06-24
JP2012519394A (ja) 2012-08-23

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Application publication date: 20120509