JP2012519394A5 - - Google Patents

Download PDF

Info

Publication number
JP2012519394A5
JP2012519394A5 JP2011553052A JP2011553052A JP2012519394A5 JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5 JP 2011553052 A JP2011553052 A JP 2011553052A JP 2011553052 A JP2011553052 A JP 2011553052A JP 2012519394 A5 JP2012519394 A5 JP 2012519394A5
Authority
JP
Japan
Prior art keywords
film
substrate
region
top surface
item
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011553052A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012519394A (ja
JP5739824B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2010/025959 external-priority patent/WO2010101946A1/en
Publication of JP2012519394A publication Critical patent/JP2012519394A/ja
Publication of JP2012519394A5 publication Critical patent/JP2012519394A5/ja
Application granted granted Critical
Publication of JP5739824B2 publication Critical patent/JP5739824B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011553052A 2009-03-02 2010-03-02 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子 Expired - Fee Related JP5739824B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15671009P 2009-03-02 2009-03-02
US61/156,710 2009-03-02
US18453509P 2009-06-05 2009-06-05
US61/184,535 2009-06-05
PCT/US2010/025959 WO2010101946A1 (en) 2009-03-02 2010-03-02 DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014166443A Division JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Publications (3)

Publication Number Publication Date
JP2012519394A JP2012519394A (ja) 2012-08-23
JP2012519394A5 true JP2012519394A5 (cg-RX-API-DMAC7.html) 2013-04-18
JP5739824B2 JP5739824B2 (ja) 2015-06-24

Family

ID=42666641

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011553052A Expired - Fee Related JP5739824B2 (ja) 2009-03-02 2010-03-02 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子
JP2014166443A Withdrawn JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014166443A Withdrawn JP2014220531A (ja) 2009-03-02 2014-08-19 非極性または半極性（Ｇａ、Ａｌ、Ｉｎ、Ｂ）Ｎ基板上に成長させられる素子

Country Status (7)

Country Link
US (2) US8795430B2 (cg-RX-API-DMAC7.html)
EP (1) EP2404312A4 (cg-RX-API-DMAC7.html)
JP (2) JP5739824B2 (cg-RX-API-DMAC7.html)
KR (1) KR20110129444A (cg-RX-API-DMAC7.html)
CN (1) CN102449737A (cg-RX-API-DMAC7.html)
TW (1) TW201044444A (cg-RX-API-DMAC7.html)
WO (1) WO2010101946A1 (cg-RX-API-DMAC7.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9404197B2 (en) * 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
CN102782966B (zh) * 2010-03-04 2017-04-26 加利福尼亚大学董事会 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置
US8445890B2 (en) * 2010-03-09 2013-05-21 Micron Technology, Inc. Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8853669B2 (en) 2010-10-26 2014-10-07 The Regents Of The University Of California Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
JP2014520388A (ja) * 2011-05-13 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非ｃ−平面（Ａｌ，Ｇａ，Ｉｎ）に対するシリコン（Ｓｉ）ドーピングによる、傾斜欠陥形成の抑制および臨界厚の増加
CN103999245A (zh) 2011-12-14 2014-08-20 首尔伟傲世有限公司 半导体装置及制造半导体装置的方法
PL228006B1 (pl) * 2015-09-23 2018-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Dioda superluminescencyjna na bazie stopu AlInGaN
CN106784181B (zh) * 2016-12-14 2020-06-23 中国科学院苏州纳米技术与纳米仿生研究所 提高绿光或更长波长InGaN量子阱发光效率的方法及结构
CN107068817B (zh) * 2017-04-18 2019-05-10 湘能华磊光电股份有限公司 Led外延生长方法
WO2020017207A1 (ja) * 2018-07-20 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子
CN110211865B (zh) * 2019-05-15 2020-12-15 中国电子科技集团公司第五十五研究所 一种降低氮化镓高电子迁移率场效应管界面热阻的外延生长方法
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
FR3098992B1 (fr) * 2019-07-18 2023-01-13 Aledia Diode électroluminescente et procédé de fabrication
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
KR101372698B1 (ko) * 2002-12-16 2014-03-11 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US20060144963A1 (en) * 2003-08-18 2006-07-06 Fulkerson Terrence M Spray applicator for particulate material
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
JP4696285B2 (ja) * 2005-02-25 2011-06-08 京セラ株式会社 Ｒ面サファイア基板とそれを用いたエピタキシャル基板及び半導体装置、並びにその製造方法
KR101145755B1 (ko) * 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
TWI490918B (zh) * 2006-01-20 2015-07-01 Univ California 半極性氮化（鋁，銦，鎵，硼）之改良成長方法
JP5684455B2 (ja) 2006-02-10 2015-03-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法
JP2007227803A (ja) * 2006-02-24 2007-09-06 Kyocera Corp 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置
JP2007243006A (ja) 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
KR20090018106A (ko) 2006-05-09 2009-02-19 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 준극성 (ａｌ, ｇａ, ｉｎ)ｎ을 위한 인-시츄 결함 감소 기술
KR102511874B1 (ko) 2006-07-28 2023-03-20 더 트러스티스 오브 더 유니버시티 오브 펜실바니아 개선된 백신 및 이의 사용 방법
JP2008109066A (ja) 2006-09-29 2008-05-08 Rohm Co Ltd 発光素子
WO2008067537A2 (en) 2006-11-30 2008-06-05 University Of South Carolina Method and apparatus for growth of iii-nitride semiconductor epitaxial layers
JP2008235802A (ja) * 2007-03-23 2008-10-02 Rohm Co Ltd 発光装置
US8686396B2 (en) * 2007-05-08 2014-04-01 Nitek, Inc. Non-polar ultraviolet light emitting device and method for fabricating same
US20080296626A1 (en) 2007-05-30 2008-12-04 Benjamin Haskell Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the same
US8158497B2 (en) * 2007-06-15 2012-04-17 The Regents Of The University Of California Planar nonpolar m-plane group III nitride films grown on miscut substrates
KR101537300B1 (ko) * 2007-08-08 2015-07-16 더 리전츠 오브 더 유니버시티 오브 캘리포니아 미스컷 기판들 상에 성장된 평면의 무극성 ｍ-면 Ⅲ족-질화물 막들
CN100532638C (zh) 2008-05-16 2009-08-26 南京大学 生长非极性面GaN薄膜材料的方法及其用途

Similar Documents

Publication Publication Date Title
JP2012519394A5 (cg-RX-API-DMAC7.html)
Kim et al. Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution
Cuong et al. Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
Ee et al. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
US8816374B2 (en) Light emitting diode with graphene layer
US9240517B2 (en) Strain relief superlattices and optoelectronic devices including the same
Hu et al. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
TWI650879B (zh) 半導體發光元件用基板及半導體發光元件以及該等之製造方法
US8823044B2 (en) Light emitting diode with graphene layer
JP2010536181A5 (cg-RX-API-DMAC7.html)
WO2012050888A2 (en) Gallium nitride based structures with embedded voids and methods for their fabrication
JP2011006319A5 (cg-RX-API-DMAC7.html)
WO2013022365A1 (en) Light emitting diode with nanostructured layer and methods of making and using
CN103311397B (zh) 通过压力缓降生长改进的LED的p‑GaN层
Kataria et al. Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon
Huang et al. High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate
Quan et al. High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes
US20170186905A1 (en) Heterostructure Including Anodic Aluminum Oxide Layer
Lee et al. GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission
FR3044464A1 (fr) Procede permettant d'obtenir sur un substrat cristallin une couche semi-polaire de nitrure
JP4806112B1 (ja) 発光ダイオード
Deng et al. InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
JP2012243780A (ja) 半導体発光素子及びウェーハ
FR3029015A1 (fr) Dispositif optoelectronique a elements semiconducteurs tridimensionnels et son procede de fabrication
Hu et al. High-efficiency light-emitting column-crystallized InGaN∕ GaN quantum-well flower structure on micropillared Si substrate