JP2012511106A - 改善されたバリア層の性質を有する薄膜の高速成膜 - Google Patents

改善されたバリア層の性質を有する薄膜の高速成膜 Download PDF

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Publication number
JP2012511106A
JP2012511106A JP2011539778A JP2011539778A JP2012511106A JP 2012511106 A JP2012511106 A JP 2012511106A JP 2011539778 A JP2011539778 A JP 2011539778A JP 2011539778 A JP2011539778 A JP 2011539778A JP 2012511106 A JP2012511106 A JP 2012511106A
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Prior art keywords
substrate
barrier
thin film
less
precursor
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Japanese (ja)
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JP2012511106A5 (enExample
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アール ディッキー エリック
バロー ウィリアム
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Lotus Applied Technology LLC
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Lotus Applied Technology LLC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Wrappers (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
JP2011539778A 2008-12-05 2009-12-07 改善されたバリア層の性質を有する薄膜の高速成膜 Pending JP2012511106A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12038108P 2008-12-05 2008-12-05
US61/120,381 2008-12-05
US16128709P 2009-03-18 2009-03-18
US61/161,287 2009-03-18
PCT/US2009/067024 WO2010065966A2 (en) 2008-12-05 2009-12-07 High rate deposition of thin films with improved barrier layer properties

Publications (2)

Publication Number Publication Date
JP2012511106A true JP2012511106A (ja) 2012-05-17
JP2012511106A5 JP2012511106A5 (enExample) 2013-01-31

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JP2011539778A Pending JP2012511106A (ja) 2008-12-05 2009-12-07 改善されたバリア層の性質を有する薄膜の高速成膜

Country Status (7)

Country Link
US (1) US20100143710A1 (enExample)
EP (1) EP2364380A4 (enExample)
JP (1) JP2012511106A (enExample)
KR (1) KR20110100618A (enExample)
CN (1) CN102239278A (enExample)
BR (1) BRPI0922795A2 (enExample)
WO (1) WO2010065966A2 (enExample)

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US8637117B2 (en) 2009-10-14 2014-01-28 Lotus Applied Technology, Llc Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
US9297076B2 (en) * 2010-07-23 2016-03-29 Lotus Applied Technology, Llc Substrate transport mechanism contacting a single side of a flexible web substrate for roll-to-roll thin film deposition
JP5864089B2 (ja) 2010-08-25 2016-02-17 日亜化学工業株式会社 発光装置の製造方法
WO2012032343A1 (en) 2010-09-07 2012-03-15 Sun Chemical B.V. A carbon dioxide barrier coating
JP5682372B2 (ja) * 2011-02-07 2015-03-11 ソニー株式会社 電池用セパレータ、電池用セパレータの製造方法、電池、電池パックおよび電子機器
WO2012133541A1 (ja) * 2011-03-29 2012-10-04 凸版印刷株式会社 巻き取り成膜装置
US20130177760A1 (en) 2011-07-11 2013-07-11 Lotus Applied Technology, Llc Mixed metal oxide barrier films and atomic layer deposition method for making mixed metal oxide barrier films
CN102514280B (zh) * 2011-12-12 2015-02-04 武汉理工大学 一种太阳能选择性吸收涂层的制备方法
EP2841621A4 (en) * 2012-03-23 2016-03-16 Picosun Oy METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION
WO2013180005A1 (ja) * 2012-05-31 2013-12-05 凸版印刷株式会社 巻き取り成膜装置
KR101372309B1 (ko) * 2012-08-07 2014-03-13 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
TWI592310B (zh) * 2012-10-18 2017-07-21 凸版印刷股份有限公司 積層體、阻氣薄膜及其製造方法
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US20160108524A1 (en) * 2014-10-17 2016-04-21 Lotus Applied Technology, Llc High-speed deposition of mixed oxide barrier films
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JP5795427B1 (ja) * 2014-12-26 2015-10-14 竹本容器株式会社 被膜付き樹脂容器の製造方法及び樹脂容器被覆装置
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CN107815665A (zh) * 2016-09-14 2018-03-20 中国科学院上海硅酸盐研究所 一种二氧化钛薄膜及其制备方法和应用
CN106947957A (zh) * 2017-03-01 2017-07-14 秦皇岛博硕光电设备股份有限公司 食品/药品容器的加工方法、食品/药品容器用材料及食品/药品容器
CN110709174A (zh) 2017-06-22 2020-01-17 宝洁公司 包括水溶性层和气相沉积有机涂层的膜
CN110719968A (zh) * 2017-06-22 2020-01-21 宝洁公司 包括水溶性层和气相沉积无机涂层的膜
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