JP2012511104A5 - - Google Patents

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Publication number
JP2012511104A5
JP2012511104A5 JP2011539688A JP2011539688A JP2012511104A5 JP 2012511104 A5 JP2012511104 A5 JP 2012511104A5 JP 2011539688 A JP2011539688 A JP 2011539688A JP 2011539688 A JP2011539688 A JP 2011539688A JP 2012511104 A5 JP2012511104 A5 JP 2012511104A5
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JP
Japan
Prior art keywords
source
plasma
gas
uniformity
planar antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011539688A
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English (en)
Japanese (ja)
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JP2012511104A (ja
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Publication date
Priority claimed from US12/328,096 external-priority patent/US8501624B2/en
Application filed filed Critical
Publication of JP2012511104A publication Critical patent/JP2012511104A/ja
Publication of JP2012511104A5 publication Critical patent/JP2012511104A5/ja
Pending legal-status Critical Current

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JP2011539688A 2008-12-04 2009-12-03 イオン注入制御のための励起ガス注入 Pending JP2012511104A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/328,096 2008-12-04
US12/328,096 US8501624B2 (en) 2008-12-04 2008-12-04 Excited gas injection for ion implant control
PCT/US2009/066549 WO2010065718A2 (en) 2008-12-04 2009-12-03 Excited gas injection for ion implant control

Publications (2)

Publication Number Publication Date
JP2012511104A JP2012511104A (ja) 2012-05-17
JP2012511104A5 true JP2012511104A5 (enExample) 2012-12-27

Family

ID=42229862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011539688A Pending JP2012511104A (ja) 2008-12-04 2009-12-03 イオン注入制御のための励起ガス注入

Country Status (6)

Country Link
US (2) US8501624B2 (enExample)
JP (1) JP2012511104A (enExample)
KR (1) KR20110103992A (enExample)
CN (1) CN102232241B (enExample)
TW (1) TWI479531B (enExample)
WO (1) WO2010065718A2 (enExample)

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US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
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US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
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US9978554B1 (en) 2017-01-26 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Dual cathode ion source
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CN110379698A (zh) * 2019-07-29 2019-10-25 上海集成电路研发中心有限公司 一种具有双离化室的离子源
KR102801283B1 (ko) * 2019-09-20 2025-04-30 엔테그리스, 아이엔씨. 이온 주입을 위한 플라즈마 침지 방법
US11515131B2 (en) * 2019-12-06 2022-11-29 The Charles Stark Draper Laboratory Inc. System for focused deposition of atomic vapors
US12154753B2 (en) * 2021-09-13 2024-11-26 Applied Materials, Inc. Device to control uniformity of extracted ion beam
CN115602513B (zh) * 2021-09-15 2023-08-29 和舰芯片制造(苏州)股份有限公司 用于离子植入机的气体有效利用率的监测方法及系统

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