KR20110103992A - 이온 주입 제어를 위한 여기된 가스 분사 - Google Patents

이온 주입 제어를 위한 여기된 가스 분사 Download PDF

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Publication number
KR20110103992A
KR20110103992A KR1020117015274A KR20117015274A KR20110103992A KR 20110103992 A KR20110103992 A KR 20110103992A KR 1020117015274 A KR1020117015274 A KR 1020117015274A KR 20117015274 A KR20117015274 A KR 20117015274A KR 20110103992 A KR20110103992 A KR 20110103992A
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KR
South Korea
Prior art keywords
source
ion
chamber
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117015274A
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English (en)
Korean (ko)
Inventor
본웅 구
빅터 엠. 벤베니스트
크리스토퍼 에이. 롤런드
크레이그 알. 채니
프랭크 싱클레어
네일 제이. 바솜
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20110103992A publication Critical patent/KR20110103992A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Combustion & Propulsion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020117015274A 2008-12-04 2009-12-03 이온 주입 제어를 위한 여기된 가스 분사 Ceased KR20110103992A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/328,096 2008-12-04
US12/328,096 US8501624B2 (en) 2008-12-04 2008-12-04 Excited gas injection for ion implant control

Publications (1)

Publication Number Publication Date
KR20110103992A true KR20110103992A (ko) 2011-09-21

Family

ID=42229862

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117015274A Ceased KR20110103992A (ko) 2008-12-04 2009-12-03 이온 주입 제어를 위한 여기된 가스 분사

Country Status (6)

Country Link
US (2) US8501624B2 (enExample)
JP (1) JP2012511104A (enExample)
KR (1) KR20110103992A (enExample)
CN (1) CN102232241B (enExample)
TW (1) TWI479531B (enExample)
WO (1) WO2010065718A2 (enExample)

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US20130305988A1 (en) * 2012-05-18 2013-11-21 Axcelis Technologies, Inc. Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US8933630B2 (en) * 2012-12-19 2015-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Arc chamber with multiple cathodes for an ion source
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
US8759788B1 (en) * 2013-03-11 2014-06-24 Varian Semiconductor Equipment Associates, Inc. Ion source
JP6500009B2 (ja) 2013-03-15 2019-04-10 グレン レイン ファミリー リミテッド ライアビリティ リミテッド パートナーシップ 調節可能な質量分析アパーチャ
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9018111B2 (en) * 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
DE102014205695B4 (de) * 2014-03-27 2016-01-28 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
US9887067B2 (en) 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
CN106498360B (zh) * 2015-09-06 2019-01-25 中芯国际集成电路制造(上海)有限公司 离子形成容器以及离子源
KR102219501B1 (ko) * 2016-04-05 2021-02-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업물 내로 프로세싱 종을 주입하는 방법 및 작업물 내로 도펀트를 주입하는 방법, 및 작업물을 프로세싱하기 위한 장치
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US9978554B1 (en) * 2017-01-26 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Dual cathode ion source
US10636645B2 (en) * 2018-04-20 2020-04-28 Perkinelmer Health Sciences Canada, Inc. Dual chamber electron impact and chemical ionization source
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法
CN110379698A (zh) * 2019-07-29 2019-10-25 上海集成电路研发中心有限公司 一种具有双离化室的离子源
WO2021055606A1 (en) * 2019-09-20 2021-03-25 Entegris, Inc. Plasma immersion methods for ion implantation
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Also Published As

Publication number Publication date
WO2010065718A3 (en) 2010-08-19
TWI479531B (zh) 2015-04-01
US8501624B2 (en) 2013-08-06
CN102232241A (zh) 2011-11-02
US20130313443A1 (en) 2013-11-28
WO2010065718A2 (en) 2010-06-10
US9018829B2 (en) 2015-04-28
CN102232241B (zh) 2014-05-14
JP2012511104A (ja) 2012-05-17
US20100140077A1 (en) 2010-06-10
TW201029042A (en) 2010-08-01

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