TWI479531B - 離子源與來自其之特定離子物種離子電流輸出的改善方法 - Google Patents
離子源與來自其之特定離子物種離子電流輸出的改善方法 Download PDFInfo
- Publication number
- TWI479531B TWI479531B TW098141209A TW98141209A TWI479531B TW I479531 B TWI479531 B TW I479531B TW 098141209 A TW098141209 A TW 098141209A TW 98141209 A TW98141209 A TW 98141209A TW I479531 B TWI479531 B TW I479531B
- Authority
- TW
- Taiwan
- Prior art keywords
- source
- ion
- gas
- processing chamber
- ion source
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 17
- 150000002500 ions Chemical class 0.000 claims description 156
- 238000012545 processing Methods 0.000 claims description 88
- 238000010884 ion-beam technique Methods 0.000 claims description 29
- 230000007935 neutral effect Effects 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 20
- 239000011148 porous material Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 130
- 238000002347 injection Methods 0.000 description 36
- 239000007924 injection Substances 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 10
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000002513 implantation Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002940 repellent Effects 0.000 description 5
- 239000005871 repellent Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910015900 BF3 Inorganic materials 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 210000002159 anterior chamber Anatomy 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- -1 diborane Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Combustion & Propulsion (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/328,096 US8501624B2 (en) | 2008-12-04 | 2008-12-04 | Excited gas injection for ion implant control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201029042A TW201029042A (en) | 2010-08-01 |
| TWI479531B true TWI479531B (zh) | 2015-04-01 |
Family
ID=42229862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098141209A TWI479531B (zh) | 2008-12-04 | 2009-12-02 | 離子源與來自其之特定離子物種離子電流輸出的改善方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8501624B2 (enExample) |
| JP (1) | JP2012511104A (enExample) |
| KR (1) | KR20110103992A (enExample) |
| CN (1) | CN102232241B (enExample) |
| TW (1) | TWI479531B (enExample) |
| WO (1) | WO2010065718A2 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8999798B2 (en) * | 2009-12-17 | 2015-04-07 | Applied Materials, Inc. | Methods for forming NMOS EPI layers |
| US8742373B2 (en) * | 2010-12-10 | 2014-06-03 | Varian Semiconductor Equipment Associates, Inc. | Method of ionization |
| US8664622B2 (en) | 2012-04-11 | 2014-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of ion beam source for semiconductor ion implantation |
| US20130305988A1 (en) * | 2012-05-18 | 2013-11-21 | Axcelis Technologies, Inc. | Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source |
| US9396902B2 (en) * | 2012-05-22 | 2016-07-19 | Varian Semiconductor Equipment Associates, Inc. | Gallium ION source and materials therefore |
| US9530615B2 (en) * | 2012-08-07 | 2016-12-27 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source |
| US8933630B2 (en) * | 2012-12-19 | 2015-01-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Arc chamber with multiple cathodes for an ion source |
| JP2014157758A (ja) * | 2013-02-18 | 2014-08-28 | Sumitomo Heavy Ind Ltd | マイクロ波イオン源及びその起動方法 |
| US8759788B1 (en) * | 2013-03-11 | 2014-06-24 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US9401260B2 (en) | 2013-03-15 | 2016-07-26 | Glenn Lane Family Limited Liability Limited Partnership | Adjustable mass resolving aperture |
| JP6336719B2 (ja) * | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
| US9524849B2 (en) | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
| US9018111B2 (en) * | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
| DE102014205695B4 (de) * | 2014-03-27 | 2016-01-28 | Christof-Herbert Diener | Niederdruckplasmaanlage mit sequentieller Steuerung |
| WO2015171335A1 (en) * | 2014-05-06 | 2015-11-12 | Applied Materials, Inc. | Directional treatment for multi-dimensional device processing |
| US9275866B2 (en) * | 2014-05-15 | 2016-03-01 | International Business Machines Corporation | Gas cluster reactor for anisotropic film growth |
| US9887067B2 (en) | 2014-12-03 | 2018-02-06 | Varian Semiconductor Equipment Associates, Inc. | Boron implanting using a co-gas |
| CN106498360B (zh) * | 2015-09-06 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | 离子形成容器以及离子源 |
| WO2017176255A1 (en) * | 2016-04-05 | 2017-10-12 | Varian Semiconductor Equipment Associates, Inc. | Boron implanting using a co-gas |
| US9899193B1 (en) * | 2016-11-02 | 2018-02-20 | Varian Semiconductor Equipment Associates, Inc. | RF ion source with dynamic volume control |
| US10256069B2 (en) * | 2016-11-24 | 2019-04-09 | Axcelis Technologies, Inc. | Phosphorous trifluoride co-gas for carbon implants |
| US9978554B1 (en) | 2017-01-26 | 2018-05-22 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
| US10636645B2 (en) * | 2018-04-20 | 2020-04-28 | Perkinelmer Health Sciences Canada, Inc. | Dual chamber electron impact and chemical ionization source |
| JP6837088B2 (ja) * | 2019-02-14 | 2021-03-03 | 日本電子株式会社 | イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法 |
| CN110379698A (zh) * | 2019-07-29 | 2019-10-25 | 上海集成电路研发中心有限公司 | 一种具有双离化室的离子源 |
| KR102801283B1 (ko) * | 2019-09-20 | 2025-04-30 | 엔테그리스, 아이엔씨. | 이온 주입을 위한 플라즈마 침지 방법 |
| US11515131B2 (en) * | 2019-12-06 | 2022-11-29 | The Charles Stark Draper Laboratory Inc. | System for focused deposition of atomic vapors |
| US12154753B2 (en) * | 2021-09-13 | 2024-11-26 | Applied Materials, Inc. | Device to control uniformity of extracted ion beam |
| CN115602513B (zh) * | 2021-09-15 | 2023-08-29 | 和舰芯片制造(苏州)股份有限公司 | 用于离子植入机的气体有效利用率的监测方法及系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3368790B2 (ja) * | 1997-02-20 | 2003-01-20 | 日新電機株式会社 | イオン源装置 |
| US20050082001A1 (en) * | 2003-09-25 | 2005-04-21 | Seiko Epson Corporation | Cleaning method and cleaning device |
| TW200523977A (en) * | 2003-12-12 | 2005-07-16 | Semequip Inc | Method and apparatus for extending equipment uptime in ion implantation |
| TW200710953A (en) * | 2005-05-12 | 2007-03-16 | Tokyo Electron Ltd | Apparatus and method for plasma processing |
| TW200828490A (en) * | 2006-09-12 | 2008-07-01 | Seiko Epson Corp | Plasma treatment apparatus and plasma treatment method |
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| US2017070A (en) * | 1932-12-19 | 1935-10-15 | Du Pont | Plastic composition |
| US5107170A (en) * | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
| JPH088243B2 (ja) * | 1989-12-13 | 1996-01-29 | 三菱電機株式会社 | 表面クリーニング装置及びその方法 |
| JPH05314940A (ja) | 1992-05-08 | 1993-11-26 | Hitachi Ltd | イオンビ−ム応用装置のイオン源 |
| JPH06187936A (ja) * | 1992-12-16 | 1994-07-08 | Shimadzu Corp | 負イオン源 |
| US5517084A (en) * | 1994-07-26 | 1996-05-14 | The Regents, University Of California | Selective ion source |
| JP3319285B2 (ja) * | 1996-06-05 | 2002-08-26 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| JP2002503031A (ja) | 1998-02-09 | 2002-01-29 | アプライド マテリアルズ インコーポレイテッド | 種密度を個別制御するプラズマアシスト処理チャンバ |
| US6124675A (en) * | 1998-06-01 | 2000-09-26 | University Of Montreal | Metastable atom bombardment source |
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| JP4029495B2 (ja) * | 1998-09-16 | 2008-01-09 | 日新イオン機器株式会社 | イオン源 |
| JP4116210B2 (ja) * | 1999-12-09 | 2008-07-09 | 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー | イオン注入方法および装置 |
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| JP2005322668A (ja) | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
| CN101257944B (zh) * | 2004-12-20 | 2011-07-06 | 瓦里安半导体设备公司 | 改进低能量大电流带状束注入机中的束中和 |
| US20070028944A1 (en) | 2005-08-02 | 2007-02-08 | Sawin Herbert H | Method of using NF3 for removing surface deposits |
-
2008
- 2008-12-04 US US12/328,096 patent/US8501624B2/en active Active
-
2009
- 2009-12-02 TW TW098141209A patent/TWI479531B/zh not_active IP Right Cessation
- 2009-12-03 WO PCT/US2009/066549 patent/WO2010065718A2/en not_active Ceased
- 2009-12-03 JP JP2011539688A patent/JP2012511104A/ja active Pending
- 2009-12-03 KR KR1020117015274A patent/KR20110103992A/ko not_active Ceased
- 2009-12-03 CN CN200980148112.9A patent/CN102232241B/zh not_active Expired - Fee Related
-
2013
- 2013-07-31 US US13/955,009 patent/US9018829B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3368790B2 (ja) * | 1997-02-20 | 2003-01-20 | 日新電機株式会社 | イオン源装置 |
| US20050082001A1 (en) * | 2003-09-25 | 2005-04-21 | Seiko Epson Corporation | Cleaning method and cleaning device |
| TW200523977A (en) * | 2003-12-12 | 2005-07-16 | Semequip Inc | Method and apparatus for extending equipment uptime in ion implantation |
| TW200710953A (en) * | 2005-05-12 | 2007-03-16 | Tokyo Electron Ltd | Apparatus and method for plasma processing |
| TW200828490A (en) * | 2006-09-12 | 2008-07-01 | Seiko Epson Corp | Plasma treatment apparatus and plasma treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100140077A1 (en) | 2010-06-10 |
| US8501624B2 (en) | 2013-08-06 |
| TW201029042A (en) | 2010-08-01 |
| US20130313443A1 (en) | 2013-11-28 |
| WO2010065718A3 (en) | 2010-08-19 |
| US9018829B2 (en) | 2015-04-28 |
| JP2012511104A (ja) | 2012-05-17 |
| KR20110103992A (ko) | 2011-09-21 |
| WO2010065718A2 (en) | 2010-06-10 |
| CN102232241A (zh) | 2011-11-02 |
| CN102232241B (zh) | 2014-05-14 |
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