JP2012511104A - イオン注入制御のための励起ガス注入 - Google Patents

イオン注入制御のための励起ガス注入 Download PDF

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Publication number
JP2012511104A
JP2012511104A JP2011539688A JP2011539688A JP2012511104A JP 2012511104 A JP2012511104 A JP 2012511104A JP 2011539688 A JP2011539688 A JP 2011539688A JP 2011539688 A JP2011539688 A JP 2011539688A JP 2012511104 A JP2012511104 A JP 2012511104A
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JP
Japan
Prior art keywords
source
chamber
ion
gas
ion source
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Pending
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JP2011539688A
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English (en)
Japanese (ja)
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JP2012511104A5 (enExample
Inventor
ウォン クー ボン
エム バンヴェニスト ヴィクター
エイ ローランド クリストファー
アール チェニー クレイグ
シンクレア フランク
ジェイ バッソム ネイル
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド filed Critical ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Publication of JP2012511104A publication Critical patent/JP2012511104A/ja
Publication of JP2012511104A5 publication Critical patent/JP2012511104A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Combustion & Propulsion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2011539688A 2008-12-04 2009-12-03 イオン注入制御のための励起ガス注入 Pending JP2012511104A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/328,096 2008-12-04
US12/328,096 US8501624B2 (en) 2008-12-04 2008-12-04 Excited gas injection for ion implant control
PCT/US2009/066549 WO2010065718A2 (en) 2008-12-04 2009-12-03 Excited gas injection for ion implant control

Publications (2)

Publication Number Publication Date
JP2012511104A true JP2012511104A (ja) 2012-05-17
JP2012511104A5 JP2012511104A5 (enExample) 2012-12-27

Family

ID=42229862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011539688A Pending JP2012511104A (ja) 2008-12-04 2009-12-03 イオン注入制御のための励起ガス注入

Country Status (6)

Country Link
US (2) US8501624B2 (enExample)
JP (1) JP2012511104A (enExample)
KR (1) KR20110103992A (enExample)
CN (1) CN102232241B (enExample)
TW (1) TWI479531B (enExample)
WO (1) WO2010065718A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016529704A (ja) * 2013-07-18 2016-09-23 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 注入システムのイオンビーム品質を改善する方法
KR20190090384A (ko) * 2016-11-24 2019-08-01 액셀리스 테크놀러지스, 인크. 탄소 임플란트를 위한 삼플루오린화 인

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US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
CA2653581A1 (en) * 2009-02-11 2010-08-11 Kenneth Scott Alexander Butcher Migration and plasma enhanced chemical vapour deposition
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
US8664622B2 (en) 2012-04-11 2014-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of ion beam source for semiconductor ion implantation
US20130305988A1 (en) * 2012-05-18 2013-11-21 Axcelis Technologies, Inc. Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US8933630B2 (en) * 2012-12-19 2015-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Arc chamber with multiple cathodes for an ion source
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
US8759788B1 (en) * 2013-03-11 2014-06-24 Varian Semiconductor Equipment Associates, Inc. Ion source
US9401260B2 (en) 2013-03-15 2016-07-26 Glenn Lane Family Limited Liability Limited Partnership Adjustable mass resolving aperture
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
US9018111B2 (en) * 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
DE102014205695B4 (de) * 2014-03-27 2016-01-28 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
US9887067B2 (en) 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
CN106498360B (zh) * 2015-09-06 2019-01-25 中芯国际集成电路制造(上海)有限公司 离子形成容器以及离子源
WO2017176255A1 (en) * 2016-04-05 2017-10-12 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
US9978554B1 (en) 2017-01-26 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Dual cathode ion source
US10636645B2 (en) * 2018-04-20 2020-04-28 Perkinelmer Health Sciences Canada, Inc. Dual chamber electron impact and chemical ionization source
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法
CN110379698A (zh) * 2019-07-29 2019-10-25 上海集成电路研发中心有限公司 一种具有双离化室的离子源
KR102801283B1 (ko) * 2019-09-20 2025-04-30 엔테그리스, 아이엔씨. 이온 주입을 위한 플라즈마 침지 방법
US11515131B2 (en) * 2019-12-06 2022-11-29 The Charles Stark Draper Laboratory Inc. System for focused deposition of atomic vapors
US12154753B2 (en) * 2021-09-13 2024-11-26 Applied Materials, Inc. Device to control uniformity of extracted ion beam
CN115602513B (zh) * 2021-09-15 2023-08-29 和舰芯片制造(苏州)股份有限公司 用于离子植入机的气体有效利用率的监测方法及系统

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JPH06187936A (ja) * 1992-12-16 1994-07-08 Shimadzu Corp 負イオン源
JPH10241591A (ja) * 1997-02-20 1998-09-11 Nissin Electric Co Ltd イオン源装置
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JP2005101309A (ja) * 2003-09-25 2005-04-14 Seiko Epson Corp クリーニング方法及びクリーニング装置

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016529704A (ja) * 2013-07-18 2016-09-23 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 注入システムのイオンビーム品質を改善する方法
US10804075B2 (en) 2013-07-18 2020-10-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US10825653B2 (en) 2013-07-18 2020-11-03 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
KR20190090384A (ko) * 2016-11-24 2019-08-01 액셀리스 테크놀러지스, 인크. 탄소 임플란트를 위한 삼플루오린화 인
JP2020501009A (ja) * 2016-11-24 2020-01-16 アクセリス テクノロジーズ， インコーポレイテッド 炭素注入用の三フッ化リン複合ガス
JP7171562B2 (ja) 2016-11-24 2022-11-15 アクセリス テクノロジーズ， インコーポレイテッド 炭素注入用の三フッ化リン複合ガス
KR102489443B1 (ko) 2016-11-24 2023-01-16 액셀리스 테크놀러지스, 인크. 탄소 임플란트를 위한 삼플루오린화 인

Also Published As

Publication number Publication date
US20100140077A1 (en) 2010-06-10
US8501624B2 (en) 2013-08-06
TW201029042A (en) 2010-08-01
US20130313443A1 (en) 2013-11-28
WO2010065718A3 (en) 2010-08-19
US9018829B2 (en) 2015-04-28
KR20110103992A (ko) 2011-09-21
WO2010065718A2 (en) 2010-06-10
CN102232241A (zh) 2011-11-02
TWI479531B (zh) 2015-04-01
CN102232241B (zh) 2014-05-14

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