CN102232241B - 离子植入控制的激发气体注入 - Google Patents

离子植入控制的激发气体注入 Download PDF

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Publication number
CN102232241B
CN102232241B CN200980148112.9A CN200980148112A CN102232241B CN 102232241 B CN102232241 B CN 102232241B CN 200980148112 A CN200980148112 A CN 200980148112A CN 102232241 B CN102232241 B CN 102232241B
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CN
China
Prior art keywords
source
ion
gas
processing chamber
plasma
Prior art date
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Expired - Fee Related
Application number
CN200980148112.9A
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English (en)
Chinese (zh)
Other versions
CN102232241A (zh
Inventor
具本雄
维克多·M·本夫尼斯特
克里斯多福·A·罗兰德
奎格·R·钱尼
法兰克·辛克莱
奈尔·J·巴森
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN102232241A publication Critical patent/CN102232241A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Combustion & Propulsion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN200980148112.9A 2008-12-04 2009-12-03 离子植入控制的激发气体注入 Expired - Fee Related CN102232241B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/328,096 2008-12-04
US12/328,096 US8501624B2 (en) 2008-12-04 2008-12-04 Excited gas injection for ion implant control
PCT/US2009/066549 WO2010065718A2 (en) 2008-12-04 2009-12-03 Excited gas injection for ion implant control

Publications (2)

Publication Number Publication Date
CN102232241A CN102232241A (zh) 2011-11-02
CN102232241B true CN102232241B (zh) 2014-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980148112.9A Expired - Fee Related CN102232241B (zh) 2008-12-04 2009-12-03 离子植入控制的激发气体注入

Country Status (6)

Country Link
US (2) US8501624B2 (enExample)
JP (1) JP2012511104A (enExample)
KR (1) KR20110103992A (enExample)
CN (1) CN102232241B (enExample)
TW (1) TWI479531B (enExample)
WO (1) WO2010065718A2 (enExample)

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US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
US8664622B2 (en) 2012-04-11 2014-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of ion beam source for semiconductor ion implantation
US20130305988A1 (en) * 2012-05-18 2013-11-21 Axcelis Technologies, Inc. Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US8933630B2 (en) * 2012-12-19 2015-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Arc chamber with multiple cathodes for an ion source
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
US8759788B1 (en) * 2013-03-11 2014-06-24 Varian Semiconductor Equipment Associates, Inc. Ion source
US9401260B2 (en) 2013-03-15 2016-07-26 Glenn Lane Family Limited Liability Limited Partnership Adjustable mass resolving aperture
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9018111B2 (en) * 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
DE102014205695B4 (de) * 2014-03-27 2016-01-28 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
US9887067B2 (en) 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
CN106498360B (zh) * 2015-09-06 2019-01-25 中芯国际集成电路制造(上海)有限公司 离子形成容器以及离子源
WO2017176255A1 (en) * 2016-04-05 2017-10-12 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US9978554B1 (en) 2017-01-26 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Dual cathode ion source
US10636645B2 (en) * 2018-04-20 2020-04-28 Perkinelmer Health Sciences Canada, Inc. Dual chamber electron impact and chemical ionization source
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法
CN110379698A (zh) * 2019-07-29 2019-10-25 上海集成电路研发中心有限公司 一种具有双离化室的离子源
KR102801283B1 (ko) * 2019-09-20 2025-04-30 엔테그리스, 아이엔씨. 이온 주입을 위한 플라즈마 침지 방법
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Also Published As

Publication number Publication date
US20100140077A1 (en) 2010-06-10
US8501624B2 (en) 2013-08-06
TW201029042A (en) 2010-08-01
US20130313443A1 (en) 2013-11-28
WO2010065718A3 (en) 2010-08-19
US9018829B2 (en) 2015-04-28
JP2012511104A (ja) 2012-05-17
KR20110103992A (ko) 2011-09-21
WO2010065718A2 (en) 2010-06-10
CN102232241A (zh) 2011-11-02
TWI479531B (zh) 2015-04-01

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