JP2012508970A - オプトエレクトロニクス部品 - Google Patents
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- 238000004020 luminiscence type Methods 0.000 claims description 37
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- 150000004767 nitrides Chemical class 0.000 claims description 5
- -1 thiogallate Chemical compound 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Led Device Packages (AREA)
Abstract
【選択図】図2A
Description
− 青色半導体チップの全放射出口面積4mm2と、赤色半導体チップの全放射出口面積2mm2と、オプションとして白色半導体チップの全放射出口面積1mm2とを有するオプトエレクトロニクス部品を使用することで、約3000Kの色温度と演色評価数CRI>90とを有する暖白色光源が実現する。オプションの白色半導体チップは、平均電流において動作し、駆動電子回路と協働して色座標Cx,Cyを正確に所望の白色点に設定する。これにより、ビニングの問題が排除される。この場合、半導体チップの効率は電流密度の増大とともに下がることを考慮する必要がある。一例として、青色を放出する半導体チップ3bが電流密度350mAによって一定に動作するならば、白色半導体チップは平均電流密度175mAで動作し、白色点を設定するための電流密度は0〜350mAの間で可変である。
− 青色半導体チップの全放射出口面積5mm2と、赤色半導体チップの全放射出口面積1mm2と、オプションとして白色半導体チップの全放射出口面積1mm2とを有するオプトエレクトロニクス部品を使用することで、約6000Kの色温度と演色評価数CRI>90と100lm/W以上の効率とを有する冷白色光源が実現する。このような冷白色光源は、通常、この効率において演色評価数CRI<70である。
− 青色半導体チップの全放射出口面積2mm2と、赤色半導体チップの全放射出口面積2mm2と、白色半導体チップの全放射出口面積3mm2とを有するオプトエレクトロニクス部品を使用することで、約6000K〜2700Kの間の色温度(プランク曲線上で調整可能)と、全色温度において演色評価数CRI>90および90lm/W以上の効率を有する調整可能な光源が実現する。
本特許出願は、独国特許出願第102008057140.7号の優先権を主張し、この文書の開示内容は参照によって本出願に組み込まれている。
2 接続キャリア
3 放射放出半導体チップ
3a 放射出口面
4 変換要素
4a 外面
4b 内面
5 接着剤
6 気体で充填された中間領域
7 成形体
8 光取出しレンズ
8a 外面
8b 内面
9 さらなる変換要素
10 中心軸線
11 光センサ
12 接続帯状部
21 接続キャリアの基体
22 反射層
23 反射器
30 半導体ボディ
33a すべての放射放出半導体チップの全放射出口面
M 点
Claims (15)
- オプトエレクトロニクス部品(1)であって、
− 少なくとも2個の放射放出半導体チップ(3)が上に配置されている接続キャリア(2)と、
− 前記接続キャリア(2)に固定されている変換要素(4)と、
を備えており、
− 前記変換要素(4)が、前記半導体チップ(3)が前記変換要素(4)と前記接続キャリア(2)とによって囲まれているように、前記半導体チップ(3)を包囲しており、
− 前記放射放出半導体チップ(3)の少なくとも2個が、動作時に自身が放出する電磁放射の波長が互いに異なっており、前記変換要素(4)が、特に半球状に前記半導体チップ(3)を包囲している、
オプトエレクトロニクス部品(1)。 - 前記半導体チップ(3)と前記変換要素(4)との間に少なくとも1つの中間領域(6)が配置されており、前記少なくとも1つの中間領域が気体によって満たされている、
請求項1に記載のオプトエレクトロニクス部品。 - 前記変換要素(4)と前記接続キャリア(2)との間に、結合手段、特に、接着剤(5)が配置されており、前記結合手段が前記変換要素(4)と前記接続キャリア(2)とに直接隣接している、
請求項1または請求項2に記載のオプトエレクトロニクス部品。 - 前記変換要素(4)がセラミック材料またはガラスセラミック材料からなる、
請求項1から請求項3のいずれかに記載のオプトエレクトロニクス部品。 - 前記放射放出半導体チップ(3)の少なくとも1個が、動作時に、赤色光または白色光のスペクトル範囲の電磁放射を放出する、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス部品。 - 白色光を放出する前記半導体チップ(3)が半導体ボディ(30)を備えており、前記半導体ボディ(30)の下流、放射出口領域に、さらなる変換要素(9)が配置されており、前記さらなる変換要素(9)が、動作時に前記半導体ボディ(30)において生成される電磁放射の少なくとも一部分を、黄色光のスペクトル範囲の電磁放射に変換する、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス部品。 - 前記接続キャリア(2)に光センサ(11)が固定されており、前記光センサ(11)が前記変換要素(4)と前記接続キャリア(2)とによって囲まれているように、前記光センサ(11)が前記変換要素(4)によって包囲されており、前記光センサ(11)が、動作時に前記放射放出半導体チップ(3)によって生成される前記電磁放射を動作時に検出するように設計されている、
請求項1から請求項6のいずれかに記載のオプトエレクトロニクス部品。 - 前記半導体チップ(3)と前記光センサ(11)(存在時)とが成形体(7)に埋め込まれている、
請求項1から請求項7のいずれかに記載のオプトエレクトロニクス部品。 - 前記中間領域(6)が前記成形体(7)と前記変換要素(4)との間に延在しており、前記中間領域(6)が前記成形体(7)に直接隣接している、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス部品。 - 光取出しレンズ(8)が前記変換要素の外面(4a)に隣接しており、前記外面が前記半導体チップ(3)とは反対側である、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクス部品。 - 前記光取出しレンズ(8)が、
− 前記半導体チップ(3)の側の内面(8b)であって、半径Rconversionを有する内側半球面によって囲まれている、前記内面(8b)と、
− 前記半導体チップ(3)とは反対側の外面(8a)であって、半径Routerを有する外側半球面を囲んでいる、前記外面(8a)と、を有し、
前記半径Rconversionおよび前記半径Routerが、条件、
Router≧Rconversion*nlens/nair、
を満たしており、nlensが前記光取出しレンズ(8)の屈折率であり、nairが前記光取出しレンズ(8)の周囲物質の屈折率である、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス部品。 - − 前記成形体(7)が、半径Rinnerを有する半球面によって囲まれており、
− 前記半導体チップ(3)が、有効面積Aを有する全放射出口面(33a)を有し、
− 前記有効面積Aおよび前記半径Rinnerが、条件、
A≦1/2*π*Rinner 2、
を満たしている、
請求項1から請求項11のいずれかに記載のオプトエレクトロニクス部品。 - 前記有効面積Aおよび前記半径Rinnerが、条件、
A≧1/20*π*Rinner 2、
を満たしている、
請求項1から請求項12のいずれかに記載のオプトエレクトロニクス部品。 - 前記変換要素(4)が、
オルトケイ酸塩、チオガレート、硫化物、窒化物、フッ化物、ガーネットのうちの1種類をベースとするルミネセンス変換物質、
を含んでいる、またはこのようなルミネセンス変換物質からなる、
請求項1から請求項13のいずれかに記載のオプトエレクトロニクス部品。 - 前記変換要素(4)が、
Eu3+、Mn2+、Mn4+のうちの1種類のドーパントによって活性化されるルミネセンス変換物質、
を含んでいる、またはこのようなルミネセンス変換物質からなる、
請求項1から請求項14のいずれかに記載のオプトエレクトロニクス部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008057140A DE102008057140A1 (de) | 2008-11-13 | 2008-11-13 | Optoelektronisches Bauelement |
DE102008057140.7 | 2008-11-13 | ||
PCT/DE2009/001548 WO2010054622A2 (de) | 2008-11-13 | 2009-11-02 | Optoelektronisches bauelement |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012508970A true JP2012508970A (ja) | 2012-04-12 |
JP2012508970A5 JP2012508970A5 (ja) | 2012-12-20 |
JP5544369B2 JP5544369B2 (ja) | 2014-07-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011535869A Expired - Fee Related JP5544369B2 (ja) | 2008-11-13 | 2009-11-02 | オプトエレクトロニクス部品 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8558259B2 (ja) |
EP (1) | EP2316130A2 (ja) |
JP (1) | JP5544369B2 (ja) |
KR (1) | KR20110084307A (ja) |
CN (1) | CN102217065B (ja) |
DE (1) | DE102008057140A1 (ja) |
WO (1) | WO2010054622A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014187392A (ja) * | 2014-06-23 | 2014-10-02 | Sharp Corp | 発光装置及びこれを備えた照明装置 |
JP2019009390A (ja) * | 2017-06-28 | 2019-01-17 | パナソニックIpマネジメント株式会社 | 発光装置及びそれを備える光学分析システム |
Families Citing this family (15)
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US8486761B2 (en) * | 2010-03-25 | 2013-07-16 | Koninklijke Philips Electronics N.V. | Hybrid combination of substrate and carrier mounted light emitting devices |
US8319247B2 (en) | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
DE102010038396B4 (de) * | 2010-07-26 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Leuchtvorrichung damit |
JP5612991B2 (ja) | 2010-09-30 | 2014-10-22 | シャープ株式会社 | 発光装置及びこれを備えた照明装置 |
US9159885B2 (en) | 2010-12-29 | 2015-10-13 | 3M Innovative Properties Company | Remote phosphor LED device with broadband output and controllable color |
EP2665796A1 (en) * | 2011-01-21 | 2013-11-27 | Osram Sylvania Inc. | Luminescent converter and led light source containing same |
DE102011003989A1 (de) * | 2011-02-11 | 2012-08-16 | Osram Ag | Leuchtvorrichtung |
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Also Published As
Publication number | Publication date |
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WO2010054622A2 (de) | 2010-05-20 |
KR20110084307A (ko) | 2011-07-21 |
DE102008057140A1 (de) | 2010-05-20 |
US8558259B2 (en) | 2013-10-15 |
WO2010054622A3 (de) | 2010-07-08 |
CN102217065A (zh) | 2011-10-12 |
US20110272713A1 (en) | 2011-11-10 |
EP2316130A2 (de) | 2011-05-04 |
JP5544369B2 (ja) | 2014-07-09 |
CN102217065B (zh) | 2014-07-02 |
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