JP2012507860A5 - - Google Patents

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Publication number
JP2012507860A5
JP2012507860A5 JP2011534507A JP2011534507A JP2012507860A5 JP 2012507860 A5 JP2012507860 A5 JP 2012507860A5 JP 2011534507 A JP2011534507 A JP 2011534507A JP 2011534507 A JP2011534507 A JP 2011534507A JP 2012507860 A5 JP2012507860 A5 JP 2012507860A5
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JP
Japan
Prior art keywords
electrode assembly
lower electrode
edge ring
assembly according
gap
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JP2011534507A
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English (en)
Japanese (ja)
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JP2012507860A (ja
JP5743895B2 (ja
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Priority claimed from PCT/US2009/005857 external-priority patent/WO2010062345A2/en
Publication of JP2012507860A publication Critical patent/JP2012507860A/ja
Publication of JP2012507860A5 publication Critical patent/JP2012507860A5/ja
Application granted granted Critical
Publication of JP5743895B2 publication Critical patent/JP5743895B2/ja
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JP2011534507A 2008-10-31 2009-10-29 プラズマ処理チャンバの下側電極アセンブリ Active JP5743895B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19315108P 2008-10-31 2008-10-31
US61/193,151 2008-10-31
PCT/US2009/005857 WO2010062345A2 (en) 2008-10-31 2009-10-29 Lower electrode assembly of plasma processing chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015090990A Division JP5976875B2 (ja) 2008-10-31 2015-04-28 プラズマ処理チャンバの下側電極アセンブリ

Publications (3)

Publication Number Publication Date
JP2012507860A JP2012507860A (ja) 2012-03-29
JP2012507860A5 true JP2012507860A5 (https=) 2012-12-13
JP5743895B2 JP5743895B2 (ja) 2015-07-01

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011534507A Active JP5743895B2 (ja) 2008-10-31 2009-10-29 プラズマ処理チャンバの下側電極アセンブリ
JP2015090990A Active JP5976875B2 (ja) 2008-10-31 2015-04-28 プラズマ処理チャンバの下側電極アセンブリ
JP2016142436A Active JP6385397B2 (ja) 2008-10-31 2016-07-20 プラズマ処理チャンバの下側電極アセンブリ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015090990A Active JP5976875B2 (ja) 2008-10-31 2015-04-28 プラズマ処理チャンバの下側電極アセンブリ
JP2016142436A Active JP6385397B2 (ja) 2008-10-31 2016-07-20 プラズマ処理チャンバの下側電極アセンブリ

Country Status (7)

Country Link
US (1) US9412555B2 (https=)
EP (1) EP2342951B1 (https=)
JP (3) JP5743895B2 (https=)
KR (3) KR101624123B1 (https=)
CN (1) CN102187741B (https=)
TW (1) TWI496511B (https=)
WO (1) WO2010062345A2 (https=)

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JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件,其安装方法及等离子体处理装置
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