JP2012501511A5 - - Google Patents
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- Publication number
- JP2012501511A5 JP2012501511A5 JP2011525009A JP2011525009A JP2012501511A5 JP 2012501511 A5 JP2012501511 A5 JP 2012501511A5 JP 2011525009 A JP2011525009 A JP 2011525009A JP 2011525009 A JP2011525009 A JP 2011525009A JP 2012501511 A5 JP2012501511 A5 JP 2012501511A5
- Authority
- JP
- Japan
- Prior art keywords
- atomic percent
- phase
- change memory
- thin film
- phase change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims 6
- 229910052785 arsenic Inorganic materials 0.000 claims 6
- 239000000463 material Substances 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- 229910052745 lead Inorganic materials 0.000 claims 4
- 229910052711 selenium Inorganic materials 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- 229910052716 thallium Inorganic materials 0.000 claims 4
- 229910052718 tin Inorganic materials 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9286808P | 2008-08-29 | 2008-08-29 | |
| US61/092,868 | 2008-08-29 | ||
| US12/503,156 US8206804B2 (en) | 2008-08-29 | 2009-07-15 | Phase change memory materials |
| US12/503,156 | 2009-07-15 | ||
| PCT/US2009/004922 WO2010024936A1 (en) | 2008-08-29 | 2009-08-28 | Phase change memory materials |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014146705A Division JP6053041B2 (ja) | 2008-08-29 | 2014-07-17 | 相変化記憶材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012501511A JP2012501511A (ja) | 2012-01-19 |
| JP2012501511A5 true JP2012501511A5 (enExample) | 2013-10-10 |
Family
ID=41507809
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011525009A Pending JP2012501511A (ja) | 2008-08-29 | 2009-08-28 | 相変化記憶材料 |
| JP2014146705A Expired - Fee Related JP6053041B2 (ja) | 2008-08-29 | 2014-07-17 | 相変化記憶材料 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014146705A Expired - Fee Related JP6053041B2 (ja) | 2008-08-29 | 2014-07-17 | 相変化記憶材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8206804B2 (enExample) |
| EP (1) | EP2335297A1 (enExample) |
| JP (2) | JP2012501511A (enExample) |
| KR (1) | KR101715956B1 (enExample) |
| CN (1) | CN102138233B (enExample) |
| TW (1) | TWI404633B (enExample) |
| WO (1) | WO2010024936A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| CN106601907B (zh) * | 2016-12-14 | 2019-02-22 | 中国科学院上海微系统与信息技术研究所 | 一种选通管材料、选通管单元及其制作方法 |
| CN109880451B (zh) * | 2019-01-18 | 2020-12-18 | 申再军 | 基于相变的陶瓷包覆材料、墙体保温材料及其制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991005342A1 (en) * | 1989-09-28 | 1991-04-18 | Matsushita Electric Industrial Co., Ltd. | Optical data recording medium and method of producing the same |
| JPH0562239A (ja) * | 1991-06-20 | 1993-03-12 | Hitachi Ltd | 記録媒体及びこれを用いた情報の記録方法 |
| EP1182649B1 (en) * | 1999-05-19 | 2006-10-04 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method and optical recording medium |
| JP2003200665A (ja) * | 2001-03-08 | 2003-07-15 | Mitsubishi Chemicals Corp | 光学的情報記録用媒体及びその記録消去方法並びに製造方法 |
| US20020160305A1 (en) * | 2001-03-08 | 2002-10-31 | Mitsubishi Chemical Corporation | Optical recording medium, method of writing and erasing information using the same, and process of producing the same |
| US6930913B2 (en) * | 2002-02-20 | 2005-08-16 | Stmicroelectronics S.R.L. | Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts |
| TWI226058B (en) * | 2002-09-11 | 2005-01-01 | Tdk Corp | Optical recording medium |
| KR100651657B1 (ko) * | 2005-06-29 | 2006-12-01 | 한국과학기술연구원 | 고집적 비휘발성 메모리용 상변화 재료 |
| US8188454B2 (en) * | 2005-10-28 | 2012-05-29 | Ovonyx, Inc. | Forming a phase change memory with an ovonic threshold switch |
| JP4550042B2 (ja) * | 2006-03-13 | 2010-09-22 | 株式会社リコー | 光記録媒体 |
| US7626190B2 (en) * | 2006-06-02 | 2009-12-01 | Infineon Technologies Ag | Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device |
| KR20080055508A (ko) * | 2006-12-15 | 2008-06-19 | 삼성전자주식회사 | 한 층에서 다른 결정 격자 구조를 갖는 상변화층 및 그형성 방법과 Ｔｉ 확산 방지 수단을 구비하는 상변화메모리 소자 및 그 제조 방법 |
| KR20090002506A (ko) * | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법 |
-
2009
- 2009-07-15 US US12/503,156 patent/US8206804B2/en not_active Expired - Fee Related
- 2009-08-28 CN CN200980134692.6A patent/CN102138233B/zh not_active Expired - Fee Related
- 2009-08-28 WO PCT/US2009/004922 patent/WO2010024936A1/en not_active Ceased
- 2009-08-28 EP EP09789238A patent/EP2335297A1/en not_active Withdrawn
- 2009-08-28 KR KR1020117007093A patent/KR101715956B1/ko not_active Expired - Fee Related
- 2009-08-28 TW TW98129195A patent/TWI404633B/zh not_active IP Right Cessation
- 2009-08-28 JP JP2011525009A patent/JP2012501511A/ja active Pending
-
2014
- 2014-07-17 JP JP2014146705A patent/JP6053041B2/ja not_active Expired - Fee Related
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