JP2012501511A - 相変化記憶材料 - Google Patents

相変化記憶材料 Download PDF

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Publication number
JP2012501511A
JP2012501511A JP2011525009A JP2011525009A JP2012501511A JP 2012501511 A JP2012501511 A JP 2012501511A JP 2011525009 A JP2011525009 A JP 2011525009A JP 2011525009 A JP2011525009 A JP 2011525009A JP 2012501511 A JP2012501511 A JP 2012501511A
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JP
Japan
Prior art keywords
phase
phase change
change memory
thin film
materials
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Pending
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JP2011525009A
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English (en)
Japanese (ja)
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JP2012501511A5 (enExample
Inventor
ジー エイトケン，ブルース
エム スミス，シャーリーン
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Corning Inc
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Corning Inc
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Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of JP2012501511A publication Critical patent/JP2012501511A/ja
Publication of JP2012501511A5 publication Critical patent/JP2012501511A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Glass Compositions (AREA)
JP2011525009A 2008-08-29 2009-08-28 相変化記憶材料 Pending JP2012501511A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9286808P 2008-08-29 2008-08-29
US61/092,868 2008-08-29
US12/503,156 US8206804B2 (en) 2008-08-29 2009-07-15 Phase change memory materials
US12/503,156 2009-07-15
PCT/US2009/004922 WO2010024936A1 (en) 2008-08-29 2009-08-28 Phase change memory materials

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014146705A Division JP6053041B2 (ja) 2008-08-29 2014-07-17 相変化記憶材料

Publications (2)

Publication Number Publication Date
JP2012501511A true JP2012501511A (ja) 2012-01-19
JP2012501511A5 JP2012501511A5 (enExample) 2013-10-10

Family

ID=41507809

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011525009A Pending JP2012501511A (ja) 2008-08-29 2009-08-28 相変化記憶材料
JP2014146705A Expired - Fee Related JP6053041B2 (ja) 2008-08-29 2014-07-17 相変化記憶材料

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014146705A Expired - Fee Related JP6053041B2 (ja) 2008-08-29 2014-07-17 相変化記憶材料

Country Status (7)

Country Link
US (1) US8206804B2 (enExample)
EP (1) EP2335297A1 (enExample)
JP (2) JP2012501511A (enExample)
KR (1) KR101715956B1 (enExample)
CN (1) CN102138233B (enExample)
TW (1) TWI404633B (enExample)
WO (1) WO2010024936A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10889887B2 (en) 2016-08-22 2021-01-12 Honeywell International Inc. Chalcogenide sputtering target and method of making the same
CN106601907B (zh) * 2016-12-14 2019-02-22 中国科学院上海微系统与信息技术研究所 一种选通管材料、选通管单元及其制作方法
CN109880451B (zh) * 2019-01-18 2020-12-18 申再军 基于相变的陶瓷包覆材料、墙体保温材料及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001331936A (ja) * 1999-05-19 2001-11-30 Mitsubishi Chemicals Corp 光記録方法及び光記録媒体
JP2003200665A (ja) * 2001-03-08 2003-07-15 Mitsubishi Chemicals Corp 光学的情報記録用媒体及びその記録消去方法並びに製造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
WO1991005342A1 (en) * 1989-09-28 1991-04-18 Matsushita Electric Industrial Co., Ltd. Optical data recording medium and method of producing the same
JPH0562239A (ja) * 1991-06-20 1993-03-12 Hitachi Ltd 記録媒体及びこれを用いた情報の記録方法
US20020160305A1 (en) * 2001-03-08 2002-10-31 Mitsubishi Chemical Corporation Optical recording medium, method of writing and erasing information using the same, and process of producing the same
US6930913B2 (en) * 2002-02-20 2005-08-16 Stmicroelectronics S.R.L. Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts
TWI226058B (en) * 2002-09-11 2005-01-01 Tdk Corp Optical recording medium
KR100651657B1 (ko) * 2005-06-29 2006-12-01 한국과학기술연구원 고집적 비휘발성 메모리용 상변화 재료
US8188454B2 (en) * 2005-10-28 2012-05-29 Ovonyx, Inc. Forming a phase change memory with an ovonic threshold switch
JP4550042B2 (ja) * 2006-03-13 2010-09-22 株式会社リコー 光記録媒体
US7626190B2 (en) * 2006-06-02 2009-12-01 Infineon Technologies Ag Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
KR20080055508A (ko) * 2006-12-15 2008-06-19 삼성전자주식회사 한 층에서 다른 결정 격자 구조를 갖는 상변화층 및 그형성 방법과 Ｔｉ 확산 방지 수단을 구비하는 상변화메모리 소자 및 그 제조 방법
KR20090002506A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001331936A (ja) * 1999-05-19 2001-11-30 Mitsubishi Chemicals Corp 光記録方法及び光記録媒体
JP2003200665A (ja) * 2001-03-08 2003-07-15 Mitsubishi Chemicals Corp 光学的情報記録用媒体及びその記録消去方法並びに製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JPN5011012567; ＭＥＨＲＡ　Ｒ　Ｍ: 'ＳＵＩＴＡＢＩＬＩＴＹ　ＯＦ　ＧＥ-ＡＳ-ＴＥ　ＳＹＳＴＥＭ　ＦＯＲ　ＯＰＴＩＣＡＬ　ＤＡＴＡ　ＳＴＯＲＡＧＥ' ＪＯＵＲＮＡＬ　ＯＦ　ＯＰＴＩＣＳ　（ＰＡＲＩＳ） Ｖ２７　Ｎ３, 199605, Ｐ１３９-１４３ *
JPN5011012568; ＭＯＨＡＭＥＤ　Ｓ　Ｈ: 'ＳＴＲＵＣＴＵＲＡＬ　ＡＮＤ　ＯＰＴＩＣＡＬ　ＰＲＯＰＥＲＴＩＥＳ　ＯＦ　ＧＥ-ＡＳ-ＴＥ　ＴＨＩＮ　ＦＩＬＭＳ' ＥＵＲＯＰＥＡＮ　ＰＨＹＳＩＣＡＬ　ＪＯＵＲＮＡＬ Ｖ３４　Ｎ３, 200606, Ｐ１６５-１７１, ＡＰＰＬＩＥＤ　ＰＨＹＳＩＣＳ　ＥＤＰ　ＳＣＩＥＮＣＥＳ *

Also Published As

Publication number Publication date
KR101715956B1 (ko) 2017-03-13
KR20110059732A (ko) 2011-06-03
US20100055493A1 (en) 2010-03-04
CN102138233A (zh) 2011-07-27
EP2335297A1 (en) 2011-06-22
JP2015018596A (ja) 2015-01-29
WO2010024936A1 (en) 2010-03-04
JP6053041B2 (ja) 2016-12-27
CN102138233B (zh) 2014-07-02
TW201026504A (en) 2010-07-16
TWI404633B (zh) 2013-08-11
US8206804B2 (en) 2012-06-26

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