TWI404633B - 相變化記憶材料 - Google Patents
相變化記憶材料 Download PDFInfo
- Publication number
- TWI404633B TWI404633B TW98129195A TW98129195A TWI404633B TW I404633 B TWI404633 B TW I404633B TW 98129195 A TW98129195 A TW 98129195A TW 98129195 A TW98129195 A TW 98129195A TW I404633 B TWI404633 B TW I404633B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase
- combination
- atom
- change memory
- atomic
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 51
- 229910052785 arsenic Inorganic materials 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 20
- 229910052745 lead Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 229910052711 selenium Inorganic materials 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 229910052717 sulfur Inorganic materials 0.000 claims description 20
- 229910052716 thallium Inorganic materials 0.000 claims description 20
- 229910052718 tin Inorganic materials 0.000 claims description 20
- 229910052787 antimony Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 17
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002241 glass-ceramic Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000013590 bulk material Substances 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000013500 data storage Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 20
- 238000002310 reflectometry Methods 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910005900 GeTe Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000002419 bulk glass Substances 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 235000002639 sodium chloride Nutrition 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 206010069808 Electrical burn Diseases 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9286808P | 2008-08-29 | 2008-08-29 | |
| US12/503,156 US8206804B2 (en) | 2008-08-29 | 2009-07-15 | Phase change memory materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201026504A TW201026504A (en) | 2010-07-16 |
| TWI404633B true TWI404633B (zh) | 2013-08-11 |
Family
ID=41507809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98129195A TWI404633B (zh) | 2008-08-29 | 2009-08-28 | 相變化記憶材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8206804B2 (enExample) |
| EP (1) | EP2335297A1 (enExample) |
| JP (2) | JP2012501511A (enExample) |
| KR (1) | KR101715956B1 (enExample) |
| CN (1) | CN102138233B (enExample) |
| TW (1) | TWI404633B (enExample) |
| WO (1) | WO2010024936A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| CN106601907B (zh) * | 2016-12-14 | 2019-02-22 | 中国科学院上海微系统与信息技术研究所 | 一种选通管材料、选通管单元及其制作方法 |
| CN109880451B (zh) * | 2019-01-18 | 2020-12-18 | 申再军 | 基于相变的陶瓷包覆材料、墙体保温材料及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080145702A1 (en) * | 2006-12-15 | 2008-06-19 | Samsung Electronics Co., Ltd. | Phase change layers having different crystal lattices in single layer, methods of forming the same, phase change memory devices and methods of manufacturing the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991005342A1 (en) * | 1989-09-28 | 1991-04-18 | Matsushita Electric Industrial Co., Ltd. | Optical data recording medium and method of producing the same |
| JPH0562239A (ja) * | 1991-06-20 | 1993-03-12 | Hitachi Ltd | 記録媒体及びこれを用いた情報の記録方法 |
| EP1182649B1 (en) * | 1999-05-19 | 2006-10-04 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method and optical recording medium |
| JP2003200665A (ja) * | 2001-03-08 | 2003-07-15 | Mitsubishi Chemicals Corp | 光学的情報記録用媒体及びその記録消去方法並びに製造方法 |
| US20020160305A1 (en) * | 2001-03-08 | 2002-10-31 | Mitsubishi Chemical Corporation | Optical recording medium, method of writing and erasing information using the same, and process of producing the same |
| US6930913B2 (en) * | 2002-02-20 | 2005-08-16 | Stmicroelectronics S.R.L. | Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts |
| TWI226058B (en) * | 2002-09-11 | 2005-01-01 | Tdk Corp | Optical recording medium |
| KR100651657B1 (ko) * | 2005-06-29 | 2006-12-01 | 한국과학기술연구원 | 고집적 비휘발성 메모리용 상변화 재료 |
| US8188454B2 (en) * | 2005-10-28 | 2012-05-29 | Ovonyx, Inc. | Forming a phase change memory with an ovonic threshold switch |
| JP4550042B2 (ja) * | 2006-03-13 | 2010-09-22 | 株式会社リコー | 光記録媒体 |
| US7626190B2 (en) * | 2006-06-02 | 2009-12-01 | Infineon Technologies Ag | Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device |
| KR20090002506A (ko) * | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법 |
-
2009
- 2009-07-15 US US12/503,156 patent/US8206804B2/en not_active Expired - Fee Related
- 2009-08-28 CN CN200980134692.6A patent/CN102138233B/zh not_active Expired - Fee Related
- 2009-08-28 WO PCT/US2009/004922 patent/WO2010024936A1/en not_active Ceased
- 2009-08-28 EP EP09789238A patent/EP2335297A1/en not_active Withdrawn
- 2009-08-28 KR KR1020117007093A patent/KR101715956B1/ko not_active Expired - Fee Related
- 2009-08-28 TW TW98129195A patent/TWI404633B/zh not_active IP Right Cessation
- 2009-08-28 JP JP2011525009A patent/JP2012501511A/ja active Pending
-
2014
- 2014-07-17 JP JP2014146705A patent/JP6053041B2/ja not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080145702A1 (en) * | 2006-12-15 | 2008-06-19 | Samsung Electronics Co., Ltd. | Phase change layers having different crystal lattices in single layer, methods of forming the same, phase change memory devices and methods of manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| Mehra R. M., "Suitability of Ge-As-Te system for optical data storage", Journal of Optics, May 1996, Vol. 27, No. 3, pages 139-143 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101715956B1 (ko) | 2017-03-13 |
| KR20110059732A (ko) | 2011-06-03 |
| US20100055493A1 (en) | 2010-03-04 |
| CN102138233A (zh) | 2011-07-27 |
| EP2335297A1 (en) | 2011-06-22 |
| JP2015018596A (ja) | 2015-01-29 |
| JP2012501511A (ja) | 2012-01-19 |
| WO2010024936A1 (en) | 2010-03-04 |
| JP6053041B2 (ja) | 2016-12-27 |
| CN102138233B (zh) | 2014-07-02 |
| TW201026504A (en) | 2010-07-16 |
| US8206804B2 (en) | 2012-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |