CN102138233B - 相变记忆材料 - Google Patents
相变记忆材料 Download PDFInfo
- Publication number
- CN102138233B CN102138233B CN200980134692.6A CN200980134692A CN102138233B CN 102138233 B CN102138233 B CN 102138233B CN 200980134692 A CN200980134692 A CN 200980134692A CN 102138233 B CN102138233 B CN 102138233B
- Authority
- CN
- China
- Prior art keywords
- phase
- atomic percent
- memory
- combination
- phase change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims abstract description 40
- 230000015654 memory Effects 0.000 title claims abstract description 38
- 230000008859 change Effects 0.000 title claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 27
- 230000009466 transformation Effects 0.000 claims description 25
- 239000012782 phase change material Substances 0.000 claims description 23
- 238000002425 crystallisation Methods 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 20
- 230000008025 crystallization Effects 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 15
- 229910052785 arsenic Inorganic materials 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 15
- 229910052745 lead Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 229910052717 sulfur Inorganic materials 0.000 claims description 15
- 229910052716 thallium Inorganic materials 0.000 claims description 15
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 230000018199 S phase Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 230000005055 memory storage Effects 0.000 claims description 3
- 238000013500 data storage Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 14
- 238000002310 reflectometry Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 229910052711 selenium Inorganic materials 0.000 description 11
- 229910005900 GeTe Inorganic materials 0.000 description 4
- 238000004093 laser heating Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9286808P | 2008-08-29 | 2008-08-29 | |
| US61/092,868 | 2008-08-29 | ||
| US12/503,156 US8206804B2 (en) | 2008-08-29 | 2009-07-15 | Phase change memory materials |
| US12/503,156 | 2009-07-15 | ||
| PCT/US2009/004922 WO2010024936A1 (en) | 2008-08-29 | 2009-08-28 | Phase change memory materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102138233A CN102138233A (zh) | 2011-07-27 |
| CN102138233B true CN102138233B (zh) | 2014-07-02 |
Family
ID=41507809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980134692.6A Expired - Fee Related CN102138233B (zh) | 2008-08-29 | 2009-08-28 | 相变记忆材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8206804B2 (enExample) |
| EP (1) | EP2335297A1 (enExample) |
| JP (2) | JP2012501511A (enExample) |
| KR (1) | KR101715956B1 (enExample) |
| CN (1) | CN102138233B (enExample) |
| TW (1) | TWI404633B (enExample) |
| WO (1) | WO2010024936A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| CN106601907B (zh) * | 2016-12-14 | 2019-02-22 | 中国科学院上海微系统与信息技术研究所 | 一种选通管材料、选通管单元及其制作方法 |
| CN109880451B (zh) * | 2019-01-18 | 2020-12-18 | 申再军 | 基于相变的陶瓷包覆材料、墙体保温材料及其制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991005342A1 (en) * | 1989-09-28 | 1991-04-18 | Matsushita Electric Industrial Co., Ltd. | Optical data recording medium and method of producing the same |
| JPH0562239A (ja) * | 1991-06-20 | 1993-03-12 | Hitachi Ltd | 記録媒体及びこれを用いた情報の記録方法 |
| EP1182649B1 (en) * | 1999-05-19 | 2006-10-04 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method and optical recording medium |
| JP2003200665A (ja) * | 2001-03-08 | 2003-07-15 | Mitsubishi Chemicals Corp | 光学的情報記録用媒体及びその記録消去方法並びに製造方法 |
| US20020160305A1 (en) * | 2001-03-08 | 2002-10-31 | Mitsubishi Chemical Corporation | Optical recording medium, method of writing and erasing information using the same, and process of producing the same |
| US6930913B2 (en) * | 2002-02-20 | 2005-08-16 | Stmicroelectronics S.R.L. | Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts |
| TWI226058B (en) * | 2002-09-11 | 2005-01-01 | Tdk Corp | Optical recording medium |
| KR100651657B1 (ko) * | 2005-06-29 | 2006-12-01 | 한국과학기술연구원 | 고집적 비휘발성 메모리용 상변화 재료 |
| US8188454B2 (en) * | 2005-10-28 | 2012-05-29 | Ovonyx, Inc. | Forming a phase change memory with an ovonic threshold switch |
| JP4550042B2 (ja) * | 2006-03-13 | 2010-09-22 | 株式会社リコー | 光記録媒体 |
| US7626190B2 (en) * | 2006-06-02 | 2009-12-01 | Infineon Technologies Ag | Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device |
| KR20080055508A (ko) * | 2006-12-15 | 2008-06-19 | 삼성전자주식회사 | 한 층에서 다른 결정 격자 구조를 갖는 상변화층 및 그형성 방법과 Ｔｉ 확산 방지 수단을 구비하는 상변화메모리 소자 및 그 제조 방법 |
| KR20090002506A (ko) * | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법 |
-
2009
- 2009-07-15 US US12/503,156 patent/US8206804B2/en not_active Expired - Fee Related
- 2009-08-28 CN CN200980134692.6A patent/CN102138233B/zh not_active Expired - Fee Related
- 2009-08-28 WO PCT/US2009/004922 patent/WO2010024936A1/en not_active Ceased
- 2009-08-28 EP EP09789238A patent/EP2335297A1/en not_active Withdrawn
- 2009-08-28 KR KR1020117007093A patent/KR101715956B1/ko not_active Expired - Fee Related
- 2009-08-28 TW TW98129195A patent/TWI404633B/zh not_active IP Right Cessation
- 2009-08-28 JP JP2011525009A patent/JP2012501511A/ja active Pending
-
2014
- 2014-07-17 JP JP2014146705A patent/JP6053041B2/ja not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| ELECTRON MICROSCOPIC STUDY OF THE HOMOLOGOUS SERIES OF MIXED LAYER COMPOUNDS (As2Te3)(GeTe)n;S. Kuypers ect;《Micron and Microscopica Acta》;19871231;第18卷(第3期);第245页第1-3段 * |
| Ge-As-Se-Te系统玻璃的结构;汪中柱;《华东化工学院学报》;19921031;第18卷;第21页 * |
| S. Kuypers ect.ELECTRON MICROSCOPIC STUDY OF THE HOMOLOGOUS SERIES OF MIXED LAYER COMPOUNDS (As2Te3)(GeTe)n.《Micron and Microscopica Acta》.1987,第18卷(第3期),第245页第1-3段. |
| 汪中柱.Ge-As-Se-Te系统玻璃的结构.《华东化工学院学报》.1992,第18卷第21页. |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101715956B1 (ko) | 2017-03-13 |
| KR20110059732A (ko) | 2011-06-03 |
| US20100055493A1 (en) | 2010-03-04 |
| CN102138233A (zh) | 2011-07-27 |
| EP2335297A1 (en) | 2011-06-22 |
| JP2015018596A (ja) | 2015-01-29 |
| JP2012501511A (ja) | 2012-01-19 |
| WO2010024936A1 (en) | 2010-03-04 |
| JP6053041B2 (ja) | 2016-12-27 |
| TW201026504A (en) | 2010-07-16 |
| TWI404633B (zh) | 2013-08-11 |
| US8206804B2 (en) | 2012-06-26 |
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