KR100651657B1 - 고집적 비휘발성 메모리용 상변화 재료 - Google Patents
고집적 비휘발성 메모리용 상변화 재료 Download PDFInfo
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- KR100651657B1 KR100651657B1 KR1020050056892A KR20050056892A KR100651657B1 KR 100651657 B1 KR100651657 B1 KR 100651657B1 KR 1020050056892 A KR1020050056892 A KR 1020050056892A KR 20050056892 A KR20050056892 A KR 20050056892A KR 100651657 B1 KR100651657 B1 KR 100651657B1
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- 230000015654 memory Effects 0.000 title claims abstract description 61
- 239000012782 phase change material Substances 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 66
- 238000002844 melting Methods 0.000 claims abstract description 58
- 230000008018 melting Effects 0.000 claims abstract description 58
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 238000010586 diagram Methods 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000006104 solid solution Substances 0.000 claims abstract description 9
- 229910002056 binary alloy Inorganic materials 0.000 claims abstract description 8
- 230000005496 eutectics Effects 0.000 claims abstract description 6
- 238000006073 displacement reaction Methods 0.000 claims abstract description 4
- 230000008859 change Effects 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 28
- 230000008025 crystallization Effects 0.000 abstract description 28
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 40
- 239000013078 crystal Substances 0.000 description 19
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 12
- 239000011148 porous material Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000011780 sodium chloride Substances 0.000 description 5
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910005900 GeTe Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910000763 AgInSbTe Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
Claims (6)
- 평형 상태도에서 최소용융온도를 갖는 합치용융 (congruent melting) 조성 또는 공정용융 (eutectic melting) 조성 또는 상기 조성을 중심으로 개별 구성원소의 조성변위가 원자몰분율로 ±0.15 이하인 조성을 갖는 치환형 고용체 형태로서 용융온도가 600℃ 이하인 기저재료에, 붕소(B), 탄소(C), 질소(N) 및 산소(O) 중에서 선택되는 1개 이상의 비금속 원소가 첨가되어있는 것을 특징으로 하는 비휘발성 상변화 메모리 재료.
- 제 1항에 있어서, 상기 기저재료가 Sb-Te 이원계 합금을 주성분으로 하고 치환형 원소로서 Ge, Ag, In 및 Ga 중에서 선택되는 1개 이상의 원소가 첨가되어 있는 고용체인 것을 특징으로 하는 비휘발성 상변화 메모리 재료.
- 제 1 항에 있어서, 상기 메모리 재료가 하기 조성식으로 표현되는 것을 특징으로 하는 비휘발성 상변화 메모리 재료:AxMy(SbaTe1-a)z상기 식에서, a는 0.6≤a≤0.85의 범위에서 선택되며; A는 B, C, N 및 O 중에서 선택된 1개 이상의 원소이고; M은 Ge, Ag, In 및 Ga 중에서 선택된 1개 이상의 원소이며; x, y 및 z는 몰분율로서 x+y+z=1, 0<x<0.2 및 0<y<0.15를 만족한다.
- 제 1 항에 있어서, 상기 기저재료가 Sb와, Ge, In 및 Ga 중에서 선택된 한 성분과의 이원계 합금으로서, Sb와 합금을 이루는 원소간의 조성비는 각각의 이원계 평형상태도에서 공정조성 (eutectic composition)을 중심으로 원자몰분율로 ±0.1의 범위내에서 선택되는 것을 특징으로 하는 비휘발성 상변화 메모리 재료.
- 제 1 항에 있어서, 상기 메모리 재료가 하기 조성식으로 표현되는 것을 특징으로 하는 비휘발성 상변화 메모리 재료:AxMySbz상기 식에서, A는 B, C, N 및 O 중에서 선택되는 1개 이상의 원소이고, M은 Ge, In 및 Ga 중에서 선택되며, x, y 및 z는 몰분율로서 x+y+z=1, 0<x<0.2 및 0<y<0.4를 만족한다.
- 제 1 항 내지 제 5 항 중 어느 한 항의 상변화 메모리 재료에 전기적 에너지를 펄스 형태로 가하여 재료의 일부를 가열, 용융 후 비정질 상태로 냉각시켜 정보를 리셋기록하고, 리셋기록용 펄스보다 작은 크기의 펄스로 비정질 상태를 가열하여 결정질 상태로 변화시킴으로써 정보를 셋기록하고, 상기 비정질 상태와 결정질 상태의 전기저항 차이로부터 정보를 식별하는 비휘발성 상변화 메모리 셀.
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KR1020050056892A KR100651657B1 (ko) | 2005-06-29 | 2005-06-29 | 고집적 비휘발성 메모리용 상변화 재료 |
PCT/KR2006/001387 WO2007001112A1 (en) | 2005-06-29 | 2006-04-14 | Phase change material for high density non-volatile memory |
US11/411,558 US7632456B2 (en) | 2005-06-29 | 2006-04-25 | Phase change material for high density non-volatile memory |
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KR1020050056892A KR100651657B1 (ko) | 2005-06-29 | 2005-06-29 | 고집적 비휘발성 메모리용 상변화 재료 |
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US (1) | US7632456B2 (ko) |
KR (1) | KR100651657B1 (ko) |
WO (1) | WO2007001112A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100912822B1 (ko) | 2007-11-22 | 2009-08-18 | 한국전자통신연구원 | 고체 전해질 메모리 소자 및 그 제조방법 |
US8320170B2 (en) | 2009-02-27 | 2012-11-27 | Samsung Electronics Co., Ltd. | Multi-bit phase change memory devices |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US7157331B2 (en) * | 2004-06-01 | 2007-01-02 | Macronix International Co., Ltd. | Ultraviolet blocking layer |
US7335610B2 (en) * | 2004-07-23 | 2008-02-26 | Macronix International Co., Ltd. | Ultraviolet blocking layer |
US7755197B2 (en) * | 2006-02-10 | 2010-07-13 | Macronix International Co., Ltd. | UV blocking and crack protecting passivation layer |
US7662712B2 (en) * | 2006-02-10 | 2010-02-16 | Macronix International Co., Ltd. | UV blocking and crack protecting passivation layer fabricating method |
US7749802B2 (en) * | 2007-01-09 | 2010-07-06 | International Business Machines Corporation | Process for chemical vapor deposition of materials with via filling capability and structure formed thereby |
US7491573B1 (en) * | 2008-03-13 | 2009-02-17 | International Business Machines Corporation | Phase change materials for applications that require fast switching and high endurance |
WO2009152108A2 (en) * | 2008-06-10 | 2009-12-17 | Advanced Technology Materials, Inc. | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY |
US8206804B2 (en) * | 2008-08-29 | 2012-06-26 | Corning Incorporated | Phase change memory materials |
US9012876B2 (en) * | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
CN110826181B (zh) * | 2019-09-30 | 2022-02-18 | 华中科技大学 | 一种相变材料的性能获取方法、终端设备和计算机可读介质 |
CN114361335B (zh) * | 2021-12-15 | 2024-06-11 | 华中科技大学 | 一种Cu掺杂的Sb-Te体系相变材料、相变存储器及制备方法 |
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JP2001134944A (ja) * | 1999-11-08 | 2001-05-18 | Ricoh Co Ltd | 相変化型光記録媒体 |
US6646297B2 (en) * | 2000-12-26 | 2003-11-11 | Ovonyx, Inc. | Lower electrode isolation in a double-wide trench |
US6534781B2 (en) * | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
JP2002264515A (ja) * | 2001-03-12 | 2002-09-18 | Ricoh Co Ltd | 光記録媒体および情報記録再生方法 |
JP3749847B2 (ja) * | 2001-09-27 | 2006-03-01 | 株式会社東芝 | 相変化型不揮発性記憶装置及びその駆動回路 |
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- 2005-06-29 KR KR1020050056892A patent/KR100651657B1/ko active IP Right Grant
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- 2006-04-14 WO PCT/KR2006/001387 patent/WO2007001112A1/en active Application Filing
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Cited By (2)
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KR100912822B1 (ko) | 2007-11-22 | 2009-08-18 | 한국전자통신연구원 | 고체 전해질 메모리 소자 및 그 제조방법 |
US8320170B2 (en) | 2009-02-27 | 2012-11-27 | Samsung Electronics Co., Ltd. | Multi-bit phase change memory devices |
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WO2007001112A1 (en) | 2007-01-04 |
US20070001160A1 (en) | 2007-01-04 |
US7632456B2 (en) | 2009-12-15 |
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