JP2012256812A - 固体撮像装置、半導体表示装置 - Google Patents
固体撮像装置、半導体表示装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 442
- 238000003384 imaging method Methods 0.000 title claims abstract description 56
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 12
- 239000004973 liquid crystal related substance Substances 0.000 claims description 58
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 773
- 239000011701 zinc Substances 0.000 description 134
- 239000000758 substrate Substances 0.000 description 119
- 238000010438 heat treatment Methods 0.000 description 82
- 229910052760 oxygen Inorganic materials 0.000 description 82
- 239000001301 oxygen Substances 0.000 description 81
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 79
- 239000010410 layer Substances 0.000 description 77
- 238000000034 method Methods 0.000 description 73
- 230000002829 reductive effect Effects 0.000 description 46
- 239000001257 hydrogen Substances 0.000 description 45
- 229910052739 hydrogen Inorganic materials 0.000 description 45
- 239000000203 mixture Substances 0.000 description 41
- 239000013078 crystal Substances 0.000 description 38
- 230000006870 function Effects 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 37
- 239000000463 material Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 35
- 229910052738 indium Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 34
- 238000004544 sputter deposition Methods 0.000 description 34
- 125000004430 oxygen atom Chemical group O* 0.000 description 33
- 229910052725 zinc Inorganic materials 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 239000007789 gas Substances 0.000 description 29
- 229910052733 gallium Inorganic materials 0.000 description 27
- 239000012535 impurity Substances 0.000 description 27
- 229910052782 aluminium Inorganic materials 0.000 description 26
- 125000004429 atom Chemical group 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000012298 atmosphere Substances 0.000 description 22
- 229910052718 tin Inorganic materials 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 229910020994 Sn-Zn Inorganic materials 0.000 description 20
- 229910009069 Sn—Zn Inorganic materials 0.000 description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 19
- 239000012212 insulator Substances 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 19
- 239000010936 titanium Substances 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 17
- 238000009825 accumulation Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 17
- 230000001681 protective effect Effects 0.000 description 17
- 230000007547 defect Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 14
- 229910001195 gallium oxide Inorganic materials 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 239000002585 base Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000003381 stabilizer Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005096 rolling process Methods 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 229910018137 Al-Zn Inorganic materials 0.000 description 9
- 229910018573 Al—Zn Inorganic materials 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052795 boron group element Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 238000006356 dehydrogenation reaction Methods 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- -1 In—Zn oxide Chemical class 0.000 description 4
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910020944 Sn-Mg Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910009369 Zn Mg Inorganic materials 0.000 description 3
- 229910007573 Zn-Mg Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000000284 extract Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910005728 SnZn Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000012538 light obscuration Methods 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 1
- 101000828788 Homo sapiens Signal peptide peptidase-like 3 Proteins 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 239000004976 Lyotropic liquid crystal Substances 0.000 description 1
- 240000005561 Musa balbisiana Species 0.000 description 1
- 235000018290 Musa x paradisiaca Nutrition 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000005266 side chain polymer Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- Liquid Crystal (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサとを有し、複数の第1フォトセンサのうち、第1入射方向の上流側の一つの第1フォトセンサの方が、第1入射方向の下流側の他の一つの第1フォトセンサよりも、第1入射角が大きく、複数の第2フォトセンサのうち、第2入射方向の上流側の一つの第2フォトセンサの方が、第2入射方向の下流側の他の一つの第2フォトセンサよりも、第2入射角が大きい。
【選択図】図1
Description
本発明の一態様に係る固体撮像装置、または半導体表示装置は、画素部に複数のフォトセンサを有する。上記複数のフォトセンサは、入射される光の入射方向によって分類することができる。本発明の一態様では、少なくとも第1入射方向からの光が入射される複数の第1フォトセンサと、第1入射方向とは異なる第2入射方向からの光が入射される複数の第2フォトセンサとを有する。
次いで、検出可能領域を広げるという本発明の一態様によって得られる効果を分かりやすく説明するために、第1入射角と第2入射角とが一律に定められている場合の、画素部の構成について説明する。
位置情報の算出は、三角測量法などを用いて行うことができる。次いで、位置情報の具体的な算出方法について、一例を挙げて説明する。
本実施の形態では、本発明の一態様に係る固体撮像装置または半導体表示装置が有する、フォトセンサの具体的な構成について説明する。
本実施の形態では、図2(A)とは異なる回路構成を有するフォトセンサ301について説明する。
本実施の形態では、シリコンを用いたトランジスタと、酸化物半導体を用いたトランジスタとを有する、本発明の一態様に係る固体撮像装置または半導体表示装置の作製方法について説明する。
本実施の形態では、実施の形態4とは異なる構造を有する、酸化物半導体膜を用いたトランジスタについて説明する。
本実施の形態では、c軸配向し、かつab面、表面または界面の方向から見て三角形状または六角形状の原子配列を有し、c軸に垂直な方向から見て金属原子が層状または金属原子と酸素原子とが層状に配列しており、ab面においてはa軸またはb軸の向きが異なる(c軸を中心に回転した)結晶(CAAC:C Axis Aligned Crystalともいう。)を含む酸化物について説明する。
本実施の形態では、上述の実施の形態で説明したトランジスタの理想の移動度について説明する。
線形領域におけるドレイン電流Idは、以下の式10で表される。
本実施の形態では、In、Sn、及びZnを主成分として含む酸化物半導体膜(In−Sn−Zn系酸化物半導体膜の一例)をチャネル形成領域に用いたトランジスタについて説明する。
本実施の形態では、実施の形態4、5とは異なる構造を有する、酸化物半導体膜を用いたトランジスタについて説明する。酸化物半導体膜を構成する酸化物半導体は、In、Sn、及びZnを含む酸化物半導体(In−Sn−Zn系酸化物半導体)を用いてもよいし、他の実施の形態において説明した他の酸化物半導体を用いてもよい。
本実施の形態では、実施の形態4、5、9とは異なる構造を有する、酸化物半導体膜を用いたトランジスタについて説明する。なお、本実施の形態では酸化物半導体膜を構成する酸化物半導体として、In、Sn、及びZnを含む酸化物半導体(In−Sn−Zn系酸化物半導体)を用いた場合について説明するが、他の実施の形態において説明した他の酸化物半導体を用いることもできる。
本実施の形態では、本発明の一態様に係る半導体表示装置における、パネルとバックライトの配置について説明する。
101 被写体
120 基板
121 遮蔽膜
122 基板
123 遮蔽膜
200 検出可能領域
201 導電膜
202 導電膜
203 導電膜
204 画素電極
205 導電膜
206 導電膜
210 導電膜
211 導電膜
212 導電膜
213 導電膜
214 導電膜
215 半導体膜
216 半導体膜
217 半導体膜
218 導電膜
219 導電膜
220 導電膜
221 導電膜
222 導電膜
223 導電膜
224 導電膜
225 導電膜
226 導電膜
227 導電膜
228 ゲート絶縁膜
231 絶縁膜
233 対向電極
234 液晶層
235 遮蔽膜
236 基板
240 被写体
241 開口部
242 開口部
250 活性層
251 基板
253 活性層
301 フォトセンサ
302 フォトダイオード
303 増幅回路
304 トランジスタ
305 トランジスタ
306 トランジスタ
307 トランジスタ
310 露光期間
311 読み出し期間
312 電荷保持期間
320 画素
321 表示素子
322 液晶素子
323 トランジスタ
324 容量素子
350 遮蔽膜
351L0 開口部
351R0 開口部
700 基板
701 絶縁膜
702 半導体膜
703 半導体膜
704 フォトダイオード
705 nチャネル型トランジスタ
707 ゲート電極
708 絶縁膜
711 配線
712 絶縁膜
713 ゲート電極
714 ゲート絶縁膜
715 酸化物半導体膜
716 導電膜
717 導電膜
718 導電膜
719 導電膜
720 導電膜
721 導電膜
722 絶縁膜
724 トランジスタ
727 領域
728 領域
729 領域
730 ゲート電極
731 ゲート絶縁膜
732 酸化物半導体膜
733 チャネル保護膜
734 導電膜
735 導電膜
736 絶縁膜
741 ゲート電極
742 ゲート絶縁膜
743 導電膜
744 導電膜
745 酸化物半導体膜
746 絶縁膜
751 ゲート電極
752 ゲート絶縁膜
753 導電膜
754 導電膜
755 酸化物半導体膜
756 絶縁膜
761 ゲート電極
762 ゲート絶縁膜
763 導電膜
764 導電膜
765 酸化物半導体膜
766 絶縁膜
1100 基板
1102 下地絶縁膜
1104 保護絶縁膜
1106 酸化物半導体膜
1106a 高抵抗領域
1106b 低抵抗領域
1108 ゲート絶縁膜
1110 ゲート電極
1112 側壁絶縁膜
1114 電極
1116 層間絶縁膜
1118 配線
1200 基板
1202 下地絶縁膜
1206 酸化物半導体膜
1208 ゲート絶縁膜
1210 ゲート電極
1214 電極
1216 層間絶縁膜
1218 配線
1220 保護膜
1301 下地絶縁膜
1302 絶縁物
1303a 半導体領域
1303b 半導体領域
1303c 半導体領域
1304 ゲート絶縁膜
1305 ゲート
1306a 側壁絶縁物
1306b 側壁絶縁物
1307 絶縁物
1308a ソース
1308b ドレイン
1601 パネル
1602 拡散板
1603 プリズムシート
1604 拡散板
1605 導光板
1606 反射板
1607 光源
1608 バックライト
1609 回路基板
1610 FPC
1611 FPC
1612 指
5001 筐体
5002 表示部
5003 支持台
5101 筐体
5102 表示部
5103 操作キー
5201 筐体
5202 表示部
5203 硬貨投入口
5204 紙幣投入口
5205 カード投入口
5206 通帳投入口
5301 筐体
5302 筐体
5303 表示部
5304 表示部
5305 マイクロホン
5306 スピーカー
5307 操作キー
5308 スタイラス
5401 筐体
5402 表示部
5403 音声入力部
5404 音声出力部
5405 操作キー
5406 受光部
Claims (10)
- 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサとを有し、
前記複数の第1フォトセンサのうち少なくとも2つは、前記第1入射角が互いに異なる固体撮像装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサとを有し、
前記複数の第1フォトセンサのうち、前記第1入射方向の上流側の一つの第1フォトセンサの方が、前記第1入射方向の下流側の他の一つの第1フォトセンサよりも、前記第1入射角が大きい固体撮像装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサとを有し、
前記複数の第1フォトセンサのうち少なくとも2つは、前記第1入射角が互いに異なり、
前記複数の第2フォトセンサのうち少なくとも2つは、前記第2入射角が互いに異なる固体撮像装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサとを有し、
前記複数の第1フォトセンサのうち、前記第1入射方向の上流側の一つの第1フォトセンサの方が、前記第1入射方向の下流側の他の一つの第1フォトセンサよりも、前記第1入射角が大きく、
前記複数の第2フォトセンサのうち、前記第2入射方向の上流側の一つの第2フォトセンサの方が、前記第2入射方向の下流側の他の一つの第2フォトセンサよりも、前記第2入射角が大きい固体撮像装置。 - 請求項1乃至請求項4のいずれか1項において、
前記複数の第1フォトセンサ、または前記複数の第2フォトセンサは、入射する光の強度により流れる電流値が定まるフォトダイオードと、前記電流値により蓄積される電荷の量が定まり、なおかつ前記電荷の量を情報として含む出力信号を生成する増幅回路とをそれぞれ有する固体撮像装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサと、
単数、或いは複数の表示素子と、を有し、
前記表示素子は、液晶素子と、前記液晶素子への電位の供給を制御するスイッチング素子とを有し、
前記複数の第1フォトセンサのうち少なくとも2つは、前記第1入射角が互いに異なる半導体表示装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサと、
単数、或いは複数の表示素子と、を有し、
前記表示素子は、液晶素子と、前記液晶素子への電位の供給を制御するスイッチング素子とを有し、
前記複数の第1フォトセンサのうち、前記第1入射方向の上流側の一つの第1フォトセンサの方が、前記第1入射方向の下流側の他の一つの第1フォトセンサよりも、前記第1入射角が大きい半導体表示装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサと、
単数、或いは複数の表示素子と、を有し、
前記表示素子は、液晶素子と、前記液晶素子への電位の供給を制御するスイッチング素子とを有し、
前記複数の第1フォトセンサのうち少なくとも2つは、前記第1入射角が互いに異なり、
前記複数の第2フォトセンサのうち少なくとも2つは、前記第2入射角が互いに異なる半導体表示装置。 - 第1入射方向から第1入射角を有する光が入射する複数の第1フォトセンサと、
前記第1入射方向とは異なる第2入射方向から第2入射角を有する光が入射する複数の第2フォトセンサと、
単数、或いは複数の表示素子と、を有し、
前記表示素子は、液晶素子と、前記液晶素子への電位の供給を制御するスイッチング素子とを有し、
前記複数の第1フォトセンサのうち、前記第1入射方向の上流側の一つの第1フォトセンサの方が、前記第1入射方向の下流側の他の一つの第1フォトセンサよりも、前記第1入射角が大きく、
前記複数の第2フォトセンサのうち、前記第2入射方向の上流側の一つの第2フォトセンサの方が、前記第2入射方向の下流側の他の一つの第2フォトセンサよりも、前記第2入射角が大きい半導体表示装置。 - 請求項6乃至請求項9のいずれか1項において、
前記複数の第1フォトセンサ、または前記複数の第2フォトセンサは、入射する光の強度により流れる電流値が定まるフォトダイオードと、前記電流値により蓄積される電荷の量が定まり、なおかつ前記電荷の量を情報として含む出力信号を生成する増幅回路とをそれぞれ有する半導体表示装置。
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US20120032193A1 (en) | 2012-02-09 |
US8803164B2 (en) | 2014-08-12 |
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