JP2012224857A - 燐光変換発光装置 - Google Patents
燐光変換発光装置 Download PDFInfo
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- JP2012224857A JP2012224857A JP2012138030A JP2012138030A JP2012224857A JP 2012224857 A JP2012224857 A JP 2012224857A JP 2012138030 A JP2012138030 A JP 2012138030A JP 2012138030 A JP2012138030 A JP 2012138030A JP 2012224857 A JP2012224857 A JP 2012224857A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910017639 MgSi Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910004122 SrSi Inorganic materials 0.000 claims description 2
- 229910015802 BaSr Inorganic materials 0.000 abstract 1
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- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910016655 EuF 3 Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
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- 150000001342 alkaline earth metals Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Abstract
【解決手段】半導体発光デバイスが、波長変換物質と組み合わされる。半導体発光デバイスは、第一ピーク波長の第一光を放出するように形成される。波長変換物質は、第一光の少なくとも一部を吸収し、且つ、第二ピーク波長の第二光を放出するように形成される。幾つかの実施形態では、第一の波長変換物質は、(Ba1-xSrx)2-y-0.5zSi5N8ーzOz:Euy 2+、ここに、0.2<x<0.3、(Ba1-xCax)2-y-0.5zSi5N8ーzOz:Euy 2+、ここに、0.01<x<0.2、又は、M2Si5-aAaN8ーaOa:Eu2+、ここに、M=Sr,Ba,Ca;A=Al,B,Ga,Sc;且つ0.01<a<0.2である。
【選択図】なし
Description
Claims (9)
- 第一ピーク波長の第一光を放出するように形成された半導体発光デバイスと、
M2Si5-aAaN8ーaOa:Eu2+、ここに、M=Sr,Ba,Ca;A=Al,B,Ga,Sc、かつ、0.01<a<0.2、からなる第一波長変換物質と、を有し、前記第一波長変換物質は、第一光の少なくとも一部を吸収し、第二ピーク波長の第二光を放出する、構造。 - 第一光又は第二光の一部を吸収し、第三ピーク波長の第三光を放出する、第二波長変換物質を更に有する、請求項1記載の構造。
- 前記第二波長変換物質は、(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:Cea 3+Prb 3+、ここに、0<x<1、0<y<1、0<z≦0.1、0<a≦0.2、且つ、0<b≦0.1、Lu3Al5O12:Ce3+、Y3Al5O12:Ce3+、(Sr1-a-bCabBac)SixNyOz:Eua 2+(a=0.002−0.2、b=0.0−0.25、c=0.0−0.25、x=1.5−2.5、y=1.5−2.5、z=1.5−2.5)、SrSi2N2O2:Eu2+、及び、SrGa2S4:Eu2+の一つからなる、請求項2記載の構造。
- 前記構造は、白く見える、第一光、第二光及び第三光からなる複合光を放出する、請求項2記載の構造。
- 第一光、第二光又は第三光の少なくとも一部を吸収し、第四ピーク波長の第四光を放出する、第三波長変換物質を更に有する、請求項2記載の構造。
- 前記第三波長変換物質は、MgSrSiO4:Eu2+、Ba3MgSi2O8:Eu2+、及びBaMgAl10O17:Eu2+の一つからなる、請求項5記載の構造。
- 前記構造は、白く見える、第一光、第二光、第三光及び第四光からなる複合光を放出する、請求項5記載の構造。
- A=Alである、請求項1記載の構造。
- A=Bである、請求項1記載の構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/008,863 US7671529B2 (en) | 2004-12-10 | 2004-12-10 | Phosphor converted light emitting device |
US11/008863 | 2004-12-10 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005357694A Division JP5106773B2 (ja) | 2004-12-10 | 2005-12-12 | 燐光変換発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012224857A true JP2012224857A (ja) | 2012-11-15 |
JP5838130B2 JP5838130B2 (ja) | 2015-12-24 |
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JP2005357694A Active JP5106773B2 (ja) | 2004-12-10 | 2005-12-12 | 燐光変換発光装置 |
JP2012138029A Active JP5566423B2 (ja) | 2004-12-10 | 2012-06-19 | 燐光変換発光装置 |
JP2012138030A Active JP5838130B2 (ja) | 2004-12-10 | 2012-06-19 | 燐光変換発光装置 |
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JP2005357694A Active JP5106773B2 (ja) | 2004-12-10 | 2005-12-12 | 燐光変換発光装置 |
JP2012138029A Active JP5566423B2 (ja) | 2004-12-10 | 2012-06-19 | 燐光変換発光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7671529B2 (ja) |
EP (1) | EP1669429B1 (ja) |
JP (3) | JP5106773B2 (ja) |
AT (1) | ATE517966T1 (ja) |
TW (1) | TWI414075B (ja) |
Cited By (1)
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---|---|---|---|---|
JP2014122347A (ja) * | 2012-12-22 | 2014-07-03 | Chi Mei Corp | 蛍光体及び発光デバイス |
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US7671529B2 (en) | 2010-03-02 |
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