JP2012204378A5 - - Google Patents

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Publication number
JP2012204378A5
JP2012204378A5 JP2011064668A JP2011064668A JP2012204378A5 JP 2012204378 A5 JP2012204378 A5 JP 2012204378A5 JP 2011064668 A JP2011064668 A JP 2011064668A JP 2011064668 A JP2011064668 A JP 2011064668A JP 2012204378 A5 JP2012204378 A5 JP 2012204378A5
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JP
Japan
Prior art keywords
semiconductor layer
periodic
outermost periphery
array structure
conductivity type
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Application number
JP2011064668A
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English (en)
Japanese (ja)
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JP5641995B2 (ja
JP2012204378A (ja
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Publication date
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Priority to JP2011064668A priority Critical patent/JP5641995B2/ja
Priority claimed from JP2011064668A external-priority patent/JP5641995B2/ja
Priority to CN201210061291.6A priority patent/CN102694029B/zh
Priority to US13/424,340 priority patent/US8482028B2/en
Publication of JP2012204378A publication Critical patent/JP2012204378A/ja
Publication of JP2012204378A5 publication Critical patent/JP2012204378A5/ja
Application granted granted Critical
Publication of JP5641995B2 publication Critical patent/JP5641995B2/ja
Active legal-status Critical Current
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JP2011064668A 2011-03-23 2011-03-23 半導体素子 Active JP5641995B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011064668A JP5641995B2 (ja) 2011-03-23 2011-03-23 半導体素子
CN201210061291.6A CN102694029B (zh) 2011-03-23 2012-03-09 半导体元件
US13/424,340 US8482028B2 (en) 2011-03-23 2012-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011064668A JP5641995B2 (ja) 2011-03-23 2011-03-23 半導体素子

Publications (3)

Publication Number Publication Date
JP2012204378A JP2012204378A (ja) 2012-10-22
JP2012204378A5 true JP2012204378A5 (enExample) 2013-09-19
JP5641995B2 JP5641995B2 (ja) 2014-12-17

Family

ID=46859381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011064668A Active JP5641995B2 (ja) 2011-03-23 2011-03-23 半導体素子

Country Status (3)

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US (1) US8482028B2 (enExample)
JP (1) JP5641995B2 (enExample)
CN (1) CN102694029B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
JP2012074441A (ja) * 2010-09-28 2012-04-12 Toshiba Corp 電力用半導体装置
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9887259B2 (en) * 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
JP6375176B2 (ja) * 2014-08-13 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988262B2 (ja) 1998-07-24 2007-10-10 富士電機デバイステクノロジー株式会社 縦型超接合半導体素子およびその製造方法
DE19840032C1 (de) 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
JP3751463B2 (ja) 1999-03-23 2006-03-01 株式会社東芝 高耐圧半導体素子
JP4765012B2 (ja) * 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4882212B2 (ja) * 2003-08-20 2012-02-22 株式会社デンソー 縦型半導体装置
JP4289123B2 (ja) * 2003-10-29 2009-07-01 富士電機デバイステクノロジー株式会社 半導体装置
US7352036B2 (en) * 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7659588B2 (en) * 2006-01-26 2010-02-09 Siliconix Technology C. V. Termination for a superjunction device
JP5052025B2 (ja) * 2006-03-29 2012-10-17 株式会社東芝 電力用半導体素子
JP5188037B2 (ja) * 2006-06-20 2013-04-24 株式会社東芝 半導体装置
US7737469B2 (en) 2006-05-16 2010-06-15 Kabushiki Kaisha Toshiba Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
JP4620075B2 (ja) * 2007-04-03 2011-01-26 株式会社東芝 電力用半導体素子
JP4564516B2 (ja) * 2007-06-21 2010-10-20 株式会社東芝 半導体装置
DE102007036147B4 (de) * 2007-08-02 2017-12-21 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterkörpers mit einer Rekombinationszone
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
JP5718627B2 (ja) * 2010-03-15 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置

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