JP2012198194A5 - - Google Patents

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Publication number
JP2012198194A5
JP2012198194A5 JP2012013247A JP2012013247A JP2012198194A5 JP 2012198194 A5 JP2012198194 A5 JP 2012198194A5 JP 2012013247 A JP2012013247 A JP 2012013247A JP 2012013247 A JP2012013247 A JP 2012013247A JP 2012198194 A5 JP2012198194 A5 JP 2012198194A5
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JP
Japan
Prior art keywords
main surface
wiring
electrode
hole
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012013247A
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English (en)
Japanese (ja)
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JP2012198194A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012013247A priority Critical patent/JP2012198194A/ja
Priority claimed from JP2012013247A external-priority patent/JP2012198194A/ja
Priority to US13/403,227 priority patent/US9052341B2/en
Publication of JP2012198194A publication Critical patent/JP2012198194A/ja
Publication of JP2012198194A5 publication Critical patent/JP2012198194A5/ja
Pending legal-status Critical Current

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JP2012013247A 2011-03-09 2012-01-25 プローブカード及びその製造方法 Pending JP2012198194A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012013247A JP2012198194A (ja) 2011-03-09 2012-01-25 プローブカード及びその製造方法
US13/403,227 US9052341B2 (en) 2011-03-09 2012-02-23 Probe card and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011051430 2011-03-09
JP2011051430 2011-03-09
JP2012013247A JP2012198194A (ja) 2011-03-09 2012-01-25 プローブカード及びその製造方法

Publications (2)

Publication Number Publication Date
JP2012198194A JP2012198194A (ja) 2012-10-18
JP2012198194A5 true JP2012198194A5 (enExample) 2015-01-29

Family

ID=46794963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012013247A Pending JP2012198194A (ja) 2011-03-09 2012-01-25 プローブカード及びその製造方法

Country Status (2)

Country Link
US (1) US9052341B2 (enExample)
JP (1) JP2012198194A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935024B2 (en) 2016-04-28 2018-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure
KR102452488B1 (ko) * 2017-05-29 2022-10-11 삼성전자주식회사 웨이퍼 프로브 카드 및 이를 포함하는 분석 장치 및 웨이퍼 프로브 카드의 제조방법
US10761146B2 (en) * 2017-05-29 2020-09-01 Samsung Electronics Co., Ltd. Wafer probe card for evaluating micro light emitting diodes, analysis apparatus including the same, and method of fabricating the wafer probe card
KR102387464B1 (ko) * 2017-10-12 2022-04-15 삼성전자주식회사 배선 회로 테스트 장치 및 방법과, 그 방법을 포함한 반도체 소자 제조방법
TWI681480B (zh) * 2018-11-21 2020-01-01 晶英科技股份有限公司 測試針保護套結構
CN112635335B (zh) * 2020-12-11 2021-11-02 广东佛智芯微电子技术研究有限公司 芯片封装方法及芯片封装结构
CN115616260B (zh) * 2022-09-26 2024-02-23 上海泽丰半导体科技有限公司 薄膜探针卡组件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310484B1 (en) * 1996-04-01 2001-10-30 Micron Technology, Inc. Semiconductor test interconnect with variable flexure contacts
JP3022312B2 (ja) * 1996-04-15 2000-03-21 日本電気株式会社 プローブカードの製造方法
US5938452A (en) * 1996-12-23 1999-08-17 General Electric Company Flexible interface structures for electronic devices
JPH10260223A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体検査装置及びこれを用いた検査方法
US6333565B1 (en) * 1998-03-23 2001-12-25 Seiko Epson Corporation Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
US6980017B1 (en) * 1999-03-10 2005-12-27 Micron Technology, Inc. Test interconnect for bumped semiconductor components and method of fabrication
JP2001052779A (ja) 1999-08-09 2001-02-23 Nec Corp コンタクトプローブの構造とその製造方法
JP2001094227A (ja) * 1999-09-20 2001-04-06 Shinko Electric Ind Co Ltd 半導体チップ実装用の配線基板と該基板を用いた半導体チップの実装方法
US6906539B2 (en) * 2000-07-19 2005-06-14 Texas Instruments Incorporated High density, area array probe card apparatus
TWI293235B (en) * 2004-11-03 2008-02-01 Advanced Semiconductor Eng Circuitized substrate with trace embedded inside ground layer
JP5374079B2 (ja) * 2008-06-20 2013-12-25 東京エレクトロン株式会社 検査用接触構造体
JP5486866B2 (ja) * 2009-07-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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