JP2012198194A - プローブカード及びその製造方法 - Google Patents

プローブカード及びその製造方法 Download PDF

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Publication number
JP2012198194A
JP2012198194A JP2012013247A JP2012013247A JP2012198194A JP 2012198194 A JP2012198194 A JP 2012198194A JP 2012013247 A JP2012013247 A JP 2012013247A JP 2012013247 A JP2012013247 A JP 2012013247A JP 2012198194 A JP2012198194 A JP 2012198194A
Authority
JP
Japan
Prior art keywords
wiring
elastic body
main surface
electrode
probe card
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012013247A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012198194A5 (enExample
Inventor
Akinori Shiraishi
晶紀 白石
Hideaki Sakaguchi
秀明 坂口
Mitsutoshi Higashi
光敏 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2012013247A priority Critical patent/JP2012198194A/ja
Priority to US13/403,227 priority patent/US9052341B2/en
Publication of JP2012198194A publication Critical patent/JP2012198194A/ja
Publication of JP2012198194A5 publication Critical patent/JP2012198194A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2012013247A 2011-03-09 2012-01-25 プローブカード及びその製造方法 Pending JP2012198194A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012013247A JP2012198194A (ja) 2011-03-09 2012-01-25 プローブカード及びその製造方法
US13/403,227 US9052341B2 (en) 2011-03-09 2012-02-23 Probe card and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011051430 2011-03-09
JP2011051430 2011-03-09
JP2012013247A JP2012198194A (ja) 2011-03-09 2012-01-25 プローブカード及びその製造方法

Publications (2)

Publication Number Publication Date
JP2012198194A true JP2012198194A (ja) 2012-10-18
JP2012198194A5 JP2012198194A5 (enExample) 2015-01-29

Family

ID=46794963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012013247A Pending JP2012198194A (ja) 2011-03-09 2012-01-25 プローブカード及びその製造方法

Country Status (2)

Country Link
US (1) US9052341B2 (enExample)
JP (1) JP2012198194A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018221834A1 (en) * 2017-05-29 2018-12-06 Samsung Electronics Co., Ltd. Wafer probe card, analysis apparatus including the same, and method of fabricating the wafer probe card
KR20180130418A (ko) * 2017-05-29 2018-12-07 삼성전자주식회사 웨이퍼 프로브 카드 및 이를 포함하는 분석 장치 및 웨이퍼 프로브 카드의 제조방법
KR20190041317A (ko) * 2017-10-12 2019-04-22 삼성전자주식회사 배선 회로 테스트 장치 및 방법과, 그 방법을 포함한 반도체 소자 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935024B2 (en) 2016-04-28 2018-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure
TWI681480B (zh) * 2018-11-21 2020-01-01 晶英科技股份有限公司 測試針保護套結構
CN112635335B (zh) * 2020-12-11 2021-11-02 广东佛智芯微电子技术研究有限公司 芯片封装方法及芯片封装结构
CN115616260B (zh) * 2022-09-26 2024-02-23 上海泽丰半导体科技有限公司 薄膜探针卡组件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10260223A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体検査装置及びこれを用いた検査方法
JPH11340369A (ja) * 1998-03-23 1999-12-10 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP2001094227A (ja) * 1999-09-20 2001-04-06 Shinko Electric Ind Co Ltd 半導体チップ実装用の配線基板と該基板を用いた半導体チップの実装方法
JP2002513510A (ja) * 1996-12-23 2002-05-08 ゼネラル・エレクトリック・カンパニイ 電子デバイス用インターフェース構造
US20030090282A1 (en) * 1996-04-01 2003-05-15 Salman Akram Semiconductor test interconnect with variable flexure contacts
US7002362B2 (en) * 1999-03-10 2006-02-21 Micron Technology, Inc. Test system for bumped semiconductor components
JP2010002302A (ja) * 2008-06-20 2010-01-07 Tokyo Electron Ltd 検査用接触構造体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3022312B2 (ja) * 1996-04-15 2000-03-21 日本電気株式会社 プローブカードの製造方法
JP2001052779A (ja) 1999-08-09 2001-02-23 Nec Corp コンタクトプローブの構造とその製造方法
US6906539B2 (en) * 2000-07-19 2005-06-14 Texas Instruments Incorporated High density, area array probe card apparatus
TWI293235B (en) * 2004-11-03 2008-02-01 Advanced Semiconductor Eng Circuitized substrate with trace embedded inside ground layer
JP5486866B2 (ja) * 2009-07-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030090282A1 (en) * 1996-04-01 2003-05-15 Salman Akram Semiconductor test interconnect with variable flexure contacts
JP2002513510A (ja) * 1996-12-23 2002-05-08 ゼネラル・エレクトリック・カンパニイ 電子デバイス用インターフェース構造
JPH10260223A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体検査装置及びこれを用いた検査方法
JPH11340369A (ja) * 1998-03-23 1999-12-10 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
US7002362B2 (en) * 1999-03-10 2006-02-21 Micron Technology, Inc. Test system for bumped semiconductor components
JP2001094227A (ja) * 1999-09-20 2001-04-06 Shinko Electric Ind Co Ltd 半導体チップ実装用の配線基板と該基板を用いた半導体チップの実装方法
JP2010002302A (ja) * 2008-06-20 2010-01-07 Tokyo Electron Ltd 検査用接触構造体

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018221834A1 (en) * 2017-05-29 2018-12-06 Samsung Electronics Co., Ltd. Wafer probe card, analysis apparatus including the same, and method of fabricating the wafer probe card
KR20180130418A (ko) * 2017-05-29 2018-12-07 삼성전자주식회사 웨이퍼 프로브 카드 및 이를 포함하는 분석 장치 및 웨이퍼 프로브 카드의 제조방법
US10761146B2 (en) 2017-05-29 2020-09-01 Samsung Electronics Co., Ltd. Wafer probe card for evaluating micro light emitting diodes, analysis apparatus including the same, and method of fabricating the wafer probe card
KR102452488B1 (ko) * 2017-05-29 2022-10-11 삼성전자주식회사 웨이퍼 프로브 카드 및 이를 포함하는 분석 장치 및 웨이퍼 프로브 카드의 제조방법
KR20190041317A (ko) * 2017-10-12 2019-04-22 삼성전자주식회사 배선 회로 테스트 장치 및 방법과, 그 방법을 포함한 반도체 소자 제조방법
KR102387464B1 (ko) 2017-10-12 2022-04-15 삼성전자주식회사 배선 회로 테스트 장치 및 방법과, 그 방법을 포함한 반도체 소자 제조방법

Also Published As

Publication number Publication date
US20120229157A1 (en) 2012-09-13
US9052341B2 (en) 2015-06-09

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