JP2012195587A - 発光素子パッケージおよびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 230000017525 heat dissipation Effects 0.000 claims description 80
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 47
- 230000005855 radiation Effects 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000007769 metal material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- -1 YAG Chemical compound 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Abstract
【解決手段】本発明の実施形態に係る発光素子パッケージは、少なくとも1つの素子実装領域および複数の電極配置領域を含み、素子実装領域の上部面および下部面上に露出される少なくとも1つの第1放熱ビアを含み、複数の電極配置領域の上部面および下部面上に露出される複数の第2放熱ビアを含む回路基板と、素子実装領域の上部面に接合して第1放熱ビアと接続される少なくとも1つの第1放熱パッドと、第1放熱パッド上に実装された少なくとも1つの発光素子と、電極配置領域の上部面に接合して第2放熱ビアと接続される複数の第1電極パッドと、発光素子と第1電極パッドとを電気的に接続する複数のワイヤーとを備える。
【選択図】 図1
Description
110、210 回路基板
111、112、113、114、211、212、213、214 第1放熱ビア
115、116、215、216 第2放熱ビア
121、221 第1放熱パッド
122、222 第2放熱パッド
131、132、231、232 第1電極パッド
133、134、233、234 第2電極パッド
140、240 反射金属層
Claims (16)
- 少なくとも1つの素子実装領域および複数の電極配置領域、前記素子実装領域の両面上に露出される少なくとも1つの第1放熱ビア、並びに前記複数の電極配置領域の両面上に露出される複数の第2放熱ビアを含む回路基板と、
前記素子実装領域の一方の面に接合して前記第1放熱ビアと接続される少なくとも1つの第1放熱パッドと、
前記第1放熱パッド上に実装された少なくとも1つの発光素子と、
前記電極配置領域の一方の面に接合して、各々が前記複数の第2放熱ビアのうちの対応する第2放熱ビアと接続される複数の第1電極パッドと、
前記発光素子と前記複数の第1電極パッドのうち対応する第1電極パッドとを電気的に接続する複数のワイヤーと
を備えることを特徴とする発光素子パッケージ。 - 前記素子実装領域の他方の面に接合して前記第1放熱ビアと接続される少なくとも1つの第2放熱パッドと、
前記電極配置領域の他方の面に接合して、各々が前記複数の第2放熱ビアのうち対応する第2放熱ビアと接続される複数の第2電極パッドと
をさらに備えることを特徴とする請求項1に記載の発光素子パッケージ。 - 前記第1放熱ビア、前記第2放熱ビア、前記第1放熱パッド、前記第2放熱パッド、前記第1電極パッド、および前記第2電極パッドは、アルミニウム(Al)、銅(Cu)、モリブデン(Mo)、タングステン(W)、銀(Ag)、および半田のうち少なくとも1つ以上の金属物質からなることを特徴とする請求項2に記載の発光素子パッケージ。
- 前記第1放熱パッドの表面にコーティングされた反射金属層をさらに備えることを特徴とする請求項1から3の何れか1項に記載の発光素子パッケージ。
- 前記反射金属層は、0.1mm〜30mmの厚さを有することを特徴とする請求項4に記載の発光素子パッケージ。
- 前記反射金属層は、金(Au)、銀(Ag)、および白金(Pt)のうちいずれか1つの金属物質からなることを特徴とする請求項4または5に記載の発光素子パッケージ。
- 前記発光素子は、青色波長領域の光を発生する青色LEDであることを特徴とする請求項1から6の何れか1項に記載の発光素子パッケージ。
- 前記発光素子上に形成され、黄色蛍光体を含む蛍光体層と、
前記蛍光体層上に形成されたモールディング部と
をさらに備えることを特徴とする請求項7に記載の発光素子パッケージ。 - 前記回路基板は、メタルコア印刷回路基板およびFR4を含む基板のうちいずれか1つであることを特徴とする請求項1から8の何れか1項に記載の発光素子パッケージ。
- 少なくとも1つの素子実装領域および複数の電極配置領域、前記素子実装領域の両面上に露出される少なくとも1つの第1放熱ビア、並びに前記複数の電極配置領域の両面上に露出される複数の第2放熱ビアを含む回路基板を設けるステップと、
前記第1放熱ビアと接続されるように前記素子実装領域の一方の面に少なくとも1つの第1放熱パッドを形成するステップと、
前記電極配置領域の一方の面に、各々が前記複数の第2放熱ビアのうち対応する第2放熱ビアと接続されるように複数の第1電極パッドを形成するステップと、
前記第1放熱パッド上に少なくとも1つの発光素子を実装するステップと、
前記発光素子と前記第1電極パッドとが電気的に接続されるようにワイヤーボンディングするステップと
を含むことを特徴とする発光素子パッケージの製造方法。 - 前記回路基板を設けるステップは、
前記回路基板の素子実装領域上に少なくとも1つの第1ビアホールを形成するステップと、
前記回路基板の電極配置領域上に複数の第2ビアホールを形成するステップと、
前記第1ビアホール内に金属物質を充填して前記第1放熱ビアを形成するステップと、
前記第2ビアホール内に金属物質を充填して前記第2放熱ビアを形成するステップと
を含むことを特徴とする請求項10に記載の発光素子パッケージの製造方法。 - 前記第1放熱ビアと接続されるように前記素子実装領域の他方の面に少なくとも1つの第2放熱パッドを形成するステップと、
前記電極配置領域の他方の面に、各々が前記複数の第2放熱ビアのうち対応する第2放熱ビアと接続されるように複数の第2電極パッドを形成するステップと
をさらに含むことを特徴とする請求項10または11に記載の発光素子パッケージの製造方法。 - 前記第1放熱パッドの表面に金属物質をコーティングして反射金属層を形成するステップをさらに含むことを特徴とする請求項10から12の何れか1項に記載の発光素子パッケージの製造方法。
- 前記反射金属層を形成するステップは、前記第1放熱パッドの表面に前記金属物質を0.1mm〜30mmの厚さにコーティングすることを特徴とする請求項13に記載の発光素子パッケージの製造方法。
- 前記発光素子は、青色波長領域の光を発生する青色LEDであることを特徴とする請求項10から14の何れか1項に記載の発光素子パッケージの製造方法。
- 前記発光素子上に黄色蛍光体を含む蛍光体樹脂を塗布するステップと、
前記蛍光体樹脂上にモールディング樹脂を塗布するステップと
をさらに含むことを特徴とする請求項15に記載の発光素子パッケージの製造方法。
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KR1020110022367A KR101847938B1 (ko) | 2011-03-14 | 2011-03-14 | 발광소자 패키지 및 그 제조 방법 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945965A (ja) * | 1995-07-26 | 1997-02-14 | Nichia Chem Ind Ltd | セラミックスledパッケージおよびその製造方法 |
JP2004282004A (ja) * | 2002-09-17 | 2004-10-07 | Daiwa Kogyo:Kk | 発光素子搭載用基板及びその製造方法 |
WO2005029597A1 (ja) * | 2003-09-19 | 2005-03-31 | Matsushita Electric Industrial Co., Ltd. | 照明装置 |
JP2005209763A (ja) * | 2004-01-21 | 2005-08-04 | Nichia Chem Ind Ltd | 発光装置及び発光装置の製造方法 |
JP2006041230A (ja) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | 発光素子用配線基板ならびに発光装置 |
JP2006294821A (ja) * | 2005-04-08 | 2006-10-26 | Nichia Chem Ind Ltd | 耐熱性及び耐光性に優れる発光装置 |
JP2007173369A (ja) * | 2005-12-20 | 2007-07-05 | Rohm Co Ltd | 半導体発光素子及び半導体発光素子の製造方法 |
JP2007273592A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | 発光素子用配線基板および発光装置 |
JP2008227485A (ja) * | 2007-03-14 | 2008-09-25 | Samsung Electro-Mechanics Co Ltd | Ledパッケージ |
JP2009010360A (ja) * | 2007-05-31 | 2009-01-15 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2009164311A (ja) * | 2007-12-28 | 2009-07-23 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用基板およびその製造方法およびそれを用いた発光装置 |
JP2009239036A (ja) * | 2008-03-27 | 2009-10-15 | Hitachi Aic Inc | Led基板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001297603A (ja) | 2000-04-12 | 2001-10-26 | Bridgestone Corp | 線状発光体 |
DE10020465A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW462121B (en) * | 2000-09-19 | 2001-11-01 | Siliconware Precision Industries Co Ltd | Heat sink type ball grid array package |
US7196459B2 (en) * | 2003-12-05 | 2007-03-27 | International Resistive Co. Of Texas, L.P. | Light emitting assembly with heat dissipating support |
TWI419375B (zh) * | 2005-02-18 | 2013-12-11 | Nichia Corp | 具備控制配光特性用之透鏡之發光裝置 |
US7808013B2 (en) | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
TW200843130A (en) | 2007-04-17 | 2008-11-01 | Wen Lin | Package structure of a surface-mount high-power light emitting diode chip and method of making the same |
WO2009017117A1 (ja) * | 2007-07-30 | 2009-02-05 | Sharp Kabushiki Kaisha | 発光装置、照明装置及び照明装置を備えたクリーンルーム |
JP5041593B2 (ja) | 2007-08-28 | 2012-10-03 | シチズン電子株式会社 | チップ型半導体装置の製造方法 |
JP2009117536A (ja) | 2007-11-05 | 2009-05-28 | Towa Corp | 樹脂封止発光体及びその製造方法 |
US20090273002A1 (en) * | 2008-05-05 | 2009-11-05 | Wen-Chih Chiou | LED Package Structure and Fabrication Method |
KR101476422B1 (ko) | 2008-06-30 | 2014-12-26 | 서울반도체 주식회사 | 인쇄회로기판 및 그를 이용한 led 모듈 |
US8337214B2 (en) * | 2009-11-13 | 2012-12-25 | Cree, Inc. | Electrical connectors and light emitting device package and methods of assembling the same |
-
2011
- 2011-03-14 KR KR1020110022367A patent/KR101847938B1/ko active IP Right Grant
-
2012
- 2012-03-07 US US13/414,179 patent/US8866376B2/en not_active Expired - Fee Related
- 2012-03-09 EP EP12158692A patent/EP2500956A2/en not_active Withdrawn
- 2012-03-14 JP JP2012057588A patent/JP2012195587A/ja active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945965A (ja) * | 1995-07-26 | 1997-02-14 | Nichia Chem Ind Ltd | セラミックスledパッケージおよびその製造方法 |
JP2004282004A (ja) * | 2002-09-17 | 2004-10-07 | Daiwa Kogyo:Kk | 発光素子搭載用基板及びその製造方法 |
WO2005029597A1 (ja) * | 2003-09-19 | 2005-03-31 | Matsushita Electric Industrial Co., Ltd. | 照明装置 |
JP2005209763A (ja) * | 2004-01-21 | 2005-08-04 | Nichia Chem Ind Ltd | 発光装置及び発光装置の製造方法 |
JP2006041230A (ja) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | 発光素子用配線基板ならびに発光装置 |
JP2006294821A (ja) * | 2005-04-08 | 2006-10-26 | Nichia Chem Ind Ltd | 耐熱性及び耐光性に優れる発光装置 |
JP2007173369A (ja) * | 2005-12-20 | 2007-07-05 | Rohm Co Ltd | 半導体発光素子及び半導体発光素子の製造方法 |
JP2007273592A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | 発光素子用配線基板および発光装置 |
JP2008227485A (ja) * | 2007-03-14 | 2008-09-25 | Samsung Electro-Mechanics Co Ltd | Ledパッケージ |
JP2009010360A (ja) * | 2007-05-31 | 2009-01-15 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2009164311A (ja) * | 2007-12-28 | 2009-07-23 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用基板およびその製造方法およびそれを用いた発光装置 |
JP2009239036A (ja) * | 2008-03-27 | 2009-10-15 | Hitachi Aic Inc | Led基板 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017111320A1 (ko) * | 2015-12-23 | 2017-06-29 | 엘지이노텍(주) | 발광 소자 패키지 |
US10559733B2 (en) | 2015-12-23 | 2020-02-11 | Lg Innotek Co., Ltd. | Light-emitting device package |
Also Published As
Publication number | Publication date |
---|---|
EP2500956A2 (en) | 2012-09-19 |
KR20120104761A (ko) | 2012-09-24 |
KR101847938B1 (ko) | 2018-04-13 |
US20120236568A1 (en) | 2012-09-20 |
US8866376B2 (en) | 2014-10-21 |
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