JP2012191454A - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 120
- 239000003990 capacitor Substances 0.000 claims description 28
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 BaTiO 3 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
【解決手段】実施形態によれば、窒化物半導体を含む、nチャンネル型の第1〜第4トランジスタと、抵抗と、を備えた窒化物半導体装置が提供される。第1トランジスタは、第1ゲートと、第1ソースと、第1ドレインと、を有する。第2トランジスタは、第2ゲートと、第1ゲートと接続された第2ソースと、第2ドレインと、を有する。第3トランジスタは、第3ゲートと、第1ソースと接続された第3ソースと、第1ゲート及び第2ソースと接続された第3ドレインと、を有する。第4トランジスタは、第3ゲートと接続された第4ゲートと、第1ソース及び第3ソースと接続された第4ソースと、第2ゲートと接続された第4ドレインと、を有する。抵抗の一端は第2ドレインと接続され、他端は第2ゲート及び第4ドレインと接続される。
【選択図】図1
Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、第1の実施形態に係る窒化物半導体装置の構成を例示する模式図である。
同図は、本実施形態に係る窒化物半導体装置111のパターンレイアウトの例を模式的に示している。
図2は、第1の実施形態に係る窒化物半導体装置の構成を例示する回路図である。
図1及び図2に表したように、実施形態に係る窒化物半導体装置111は、第1〜第4トランジスタ10、20、30及び40と、抵抗51と、を備える。
実施形態によれば、このようなときにも、高速なスイッチングが確保できる。
同図は、図1のA1−A2線断面図である。すなわち、同図は、第1トランジスタ10の構成の例を示している。
図3に表したように、窒化物半導体装置111においては、窒化物半導体層70が設けられる。窒化物半導体層70は、GaNの第1層75と、InxAlyGa1−x−yN(0≦x<1、0<y<1)の第2層73と、を含む。第2層73は、例えば、AlGaN層である。第2層73は、第1層75の上に設けられる。
すなわち、同図は、窒化物半導体層70におけるエネルギー状態を例示している。第1層75(例えばキャリア走行層)と、第2層73(例えば電子誘起層)と、によるヘテロ接合において、第1層75と第2層73との界面にフェルミレベル70aよりもエネルギー準位が低い井戸70cが形成される。井戸70cは、例えば、平面状に分布する量子的な井戸である。この井戸70cは、フェルミレベル70aよりも低いエネルギー準位である。このため、電子によるチャネルが形成される。井戸70cの電子を、2次元電子ガス70bと言う。このチャネルにある電子(2次元電子ガス70b)の移動度は、非常に高い。ヘテロ接合を持つ窒化物半導体は、この2次元電子ガス70bをチャネルとして用いる。
電源電極パッド64に電源電圧を供給している状態において、ゲート端子(ゲート電極パッド63)にローレベルの信号が入力された時には、第3トランジスタ30及び第4トランジスタ40がオフする。このため、第2トランジスタ20の第2ゲート20gには抵抗51を介して、高電圧が印加される。そして、第2トランジスタ20はオン状態になる。その結果、第2トランジスタ20のオン抵抗程度の低インピーダンスで、電源と、第1トランジスタ10の第1ゲート10gと、が接続される。これにより、第1トランジスタ10の第1ゲート10gは急速に充電される。すなわち、第1トランジスタ10を高速にオン状態にすることができる。
これらの図は、実施形態に係る窒化物半導体装置及び参考例の窒化物半導体装置119の特性をシミュレーションした結果を例示している。図5は、これらの窒化物半導体装置への入力信号を例示している。図6は、シミュレーションにより得られた、これらの窒化物半導体装置の出力信号(ドレイン電流の信号波形)を例示している。これらの図の横軸は時間tを示す。図5の縦軸は、入力信号の電圧Vinを示す。図6の縦軸は、出力信号の電圧Voutを示す。
図7に表したように、第1トランジスタ10の面積S(サイズ)は、活性部11の面積とする。活性部11は、トランジスタの動作が実質的に行われる部分である。図7に表したように、ソース(第1ソース10s)と、ドレイン(第1ドレイン10d)と、が、ゲート(第1ゲート10g)を介して互いに対向する部分の長さL1と、幅L2と、の積を、面積Sとする。この例のように、ソースが複数の部分を有し、ドレインが複数の部分を有し、これらが櫛歯状に組み合わされている場合は、一方の端のソースまたはドレインと、他方の端のソースまたはドレインと、を含む長さが、幅L2とされる。
第2〜第4トランジスタ20、30及び40の面積も同様に定義される。
同図は、窒化物半導体のトランジスタの動作を例示している。横軸は時間tを示す。縦軸はゲート電圧Vgを示す。
図8に表したように、初期の時刻t0から第1時刻t1までの期間、トランジスタのゲート電圧Vgを徐々に上昇させたとき、ゲート電圧Vgは上昇する。ゲート電圧Vgがトランジスタのしきい値電圧Vthに達すると、ゲート電圧Vgがある期間(第1時刻t1から第2時刻t2までの期間)上昇しなくなる。
R13=A30/A10=RonQgd/(ΔV・Δt)
で表される。
すなわち、同図は、抵抗51の構成を例示している。
図9に表したように、窒化物半導体層70の第2層73の上に、電極51a及び電極51bが設けられる。これらの電極は、第2層73とオーミック性接触を形成する。すなわち、電極51a及び電極51bは、オーミック性接触によって、2次元電子ガスチャネル74に電気的に接続されている。
図10は、第2の実施形態に係る窒化物半導体装置の構成を例示する模式図である。
同図は、本実施形態に係る窒化物半導体装置112のパターンレイアウトの例を模式的に示している。
図11は、第2の実施形態に係る窒化物半導体装置の構成を例示する回路図である。
図10及び図11に表したように、実施形態に係る窒化物半導体装置112は、上記の第1〜第4トランジスタ10、20、30及び40と、抵抗51と、に加え、キャパシタ52をさらに備える。これ以外の構成は、窒化物半導体装置111と同様とすることができるので説明を省略する。
すなわち、同図は、キャパシタ52の構成を例示している。
図12に表したように、窒化物半導体層70の第2層73の上に、絶縁膜76が設けられ、絶縁膜76の上に、キャパシタ電極52aが設けられている。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
Claims (10)
- 第1ゲートと、第1ソースと、第1ドレインと、を有し、窒化物半導体を含む、nチャンネル型の第1トランジスタと、
第2ゲートと、前記第1ゲートと電気的に接続された第2ソースと、第2ドレインと、を有し、窒化物半導体を含む、nチャンネル型の第2トランジスタと、
第3ゲートと、前記第1ソースと接続された第3ソースと、前記第1ゲート及び前記第2ソースと電気的に接続された第3ドレインと、を有し、窒化物半導体を含む、nチャンネル型の第3トランジスタと、
前記第3ゲートと電気的に接続された第4ゲートと、前記第1ソース及び前記第3ソースと電気的に接続された第4ソースと、前記第2ゲートと電気的に接続された第4ドレインと、を有し、窒化物半導体を含む、nチャンネル型の第4トランジスタと、
一端が前記第2ドレインと電気的に接続され、他端が前記第2ゲート及び前記第4ドレインと電気的に接続された抵抗と、
を備えたことを特徴とする窒化物半導体装置。 - 一端が前記第2ドレイン及び前記抵抗の前記一端と電気的に接続され、他端が前記第1ソース、前記第3ソース及び前記第4ソースと電気的に接続されたキャパシタをさらに備えたことを特徴とする請求項1記載の窒化物半導体装置。
- GaNの第1層と、
前記第1層の上に設けられInxAlyGa1−x−yN(0≦x<1、0<y<1)の第2層と、
を含む窒化物半導体層をさらに備え、
前記キャパシタは、前記窒化物半導体層の一部を含むことを特徴とする請求項2記載の窒化物半導体装置。 - 前記キャパシタは、2次元電子ガスを含むことを特徴とする請求項2または3に記載の窒化物半導体装置。
- 前記第2トランジスタの活性部分の面積、前記第3トランジスタの活性部分の面積、前記第4トランジスタの活性部分の面積の、前記第1トランジスタの活性部分の面積に対する比は、5×10−5以上、5×10−1以下であることを特徴とする請求項1〜4のいずれか1つに記載の窒化物半導体装置。
- 前記第4トランジスタの前記活性部分の前記面積は、前記第2トランジスタの前記活性部分の前記面積以下であり、前記第3トランジスタの前記活性部分の前記面積以下であることを特徴とする請求項5記載の窒化物半導体装置。
- 窒化物半導体層をさらに備え、
前記第1、第2、第3及び第4トランジスタのそれぞれに含まれるチャネルのそれぞれは、前記窒化物半導体層の内部に設けられることを特徴とする請求項1〜6のいずれか1つに記載の窒化物半導体装置。 - ヘテロジャンクションを有する基板をさらに備え、
前記第1、第2、第3及び第4トランジスタは、前記基板上に設けられることを特徴とする請求項1〜7のいずれか1つに記載の窒化物半導体装置。 - GaNの第1層と、
前記第1層の上に設けられInxAlyGa1−x−yN(0≦x<1、0<y<1)の第2層と、
を含む窒化物半導体層をさらに備え、
前記抵抗は、前記窒化物半導体層の一部を含むことを特徴とする請求項1〜8のいずれか1つに記載の窒化物半導体装置。 - 前記抵抗は、2次元電子ガスを含むことを特徴とする請求項1〜9のいずれか1つに記載の窒化物半導体装置。
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