JP2012134144A5 - - Google Patents

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Publication number
JP2012134144A5
JP2012134144A5 JP2011275135A JP2011275135A JP2012134144A5 JP 2012134144 A5 JP2012134144 A5 JP 2012134144A5 JP 2011275135 A JP2011275135 A JP 2011275135A JP 2011275135 A JP2011275135 A JP 2011275135A JP 2012134144 A5 JP2012134144 A5 JP 2012134144A5
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JP
Japan
Prior art keywords
alloy layer
layer
temperature
substrate
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011275135A
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English (en)
Japanese (ja)
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JP2012134144A (ja
JP5872278B2 (ja
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Publication date
Priority claimed from US12/975,090 external-priority patent/US8826529B2/en
Application filed filed Critical
Publication of JP2012134144A publication Critical patent/JP2012134144A/ja
Publication of JP2012134144A5 publication Critical patent/JP2012134144A5/ja
Application granted granted Critical
Publication of JP5872278B2 publication Critical patent/JP5872278B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011275135A 2010-12-21 2011-12-16 マイクロ電気機械システム装置を形成する方法 Active JP5872278B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/975,090 2010-12-21
US12/975,090 US8826529B2 (en) 2009-09-23 2010-12-21 Method of forming a micro-electromechanical system device

Publications (3)

Publication Number Publication Date
JP2012134144A JP2012134144A (ja) 2012-07-12
JP2012134144A5 true JP2012134144A5 (enExample) 2015-01-29
JP5872278B2 JP5872278B2 (ja) 2016-03-01

Family

ID=45463245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011275135A Active JP5872278B2 (ja) 2010-12-21 2011-12-16 マイクロ電気機械システム装置を形成する方法

Country Status (5)

Country Link
US (1) US8826529B2 (enExample)
EP (1) EP2468928B1 (enExample)
JP (1) JP5872278B2 (enExample)
KR (1) KR101983854B1 (enExample)
CN (1) CN102623221B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779886B2 (en) * 2009-11-30 2014-07-15 General Electric Company Switch structures
US8643140B2 (en) * 2011-07-11 2014-02-04 United Microelectronics Corp. Suspended beam for use in MEMS device
US8611137B2 (en) * 2011-11-23 2013-12-17 Altera Corporation Memory elements with relay devices
JP2014115209A (ja) * 2012-12-11 2014-06-26 Seiko Epson Corp Ｍｅｍｓ素子、電子デバイス、高度計、電子機器および移動体
US9663347B2 (en) * 2015-03-02 2017-05-30 General Electric Company Electromechanical system substrate attachment for reduced thermal deformation
US9845235B2 (en) * 2015-09-03 2017-12-19 General Electric Company Refractory seed metal for electroplated MEMS structures
GB2564434B (en) 2017-07-10 2020-08-26 Ge Aviat Systems Ltd Power distribution switch for a power distribution system
US20240203669A1 (en) * 2022-12-06 2024-06-20 The Regents Of The University Of California Bit rate-adapting resoswitch
US20240274387A1 (en) * 2023-02-14 2024-08-15 Texas Instruments Incorporated Electromechanical switch

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696619A (en) 1995-02-27 1997-12-09 Texas Instruments Incorporated Micromechanical device having an improved beam
US7247035B2 (en) 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US7137830B2 (en) 2002-03-18 2006-11-21 Nanonexus, Inc. Miniaturized contact spring
US6803755B2 (en) 1999-09-21 2004-10-12 Rockwell Automation Technologies, Inc. Microelectromechanical system (MEMS) with improved beam suspension
US6307169B1 (en) 2000-02-01 2001-10-23 Motorola Inc. Micro-electromechanical switch
US6373007B1 (en) 2000-04-19 2002-04-16 The United States Of America As Represented By The Secretary Of The Air Force Series and shunt mems RF switch
US6570750B1 (en) 2000-04-19 2003-05-27 The United States Of America As Represented By The Secretary Of The Air Force Shunted multiple throw MEMS RF switch
US6788175B1 (en) 2001-10-04 2004-09-07 Superconductor Technologies, Inc. Anchors for micro-electro-mechanical systems (MEMS) devices
EP1454349B1 (en) 2001-11-09 2006-09-27 WiSpry, Inc. Trilayered beam mems device and related methods
US6624003B1 (en) * 2002-02-06 2003-09-23 Teravicta Technologies, Inc. Integrated MEMS device and package
US20050029109A1 (en) 2002-05-07 2005-02-10 Gang Zhang Method of electrochemically fabricating multilayer structures having improved interlayer adhesion
US6699379B1 (en) 2002-11-25 2004-03-02 Industrial Technology Research Institute Method for reducing stress in nickel-based alloy plating
US20040154925A1 (en) 2003-02-11 2004-08-12 Podlaha Elizabeth J. Composite metal and composite metal alloy microstructures
JP3745744B2 (ja) * 2003-04-16 2006-02-15 住友電気工業株式会社 金属構造体の製造方法およびその方法により製造した金属構造体
US6876283B1 (en) 2003-07-11 2005-04-05 Iowa State University Research Foundation, Inc. Tapered-width micro-cantilevers and micro-bridges
WO2005043572A1 (en) * 2003-10-31 2005-05-12 Koninklijke Philips Electronics N.V. Radio-frequency microelectromechanical systems and a method of manufacturing such systems
JP2005146405A (ja) 2003-11-14 2005-06-09 Toru Yamazaki 電析積層合金薄板とその製造方法
US20050248424A1 (en) * 2004-05-07 2005-11-10 Tsung-Kuan Chou Composite beam microelectromechanical system switch
US7372348B2 (en) 2004-08-20 2008-05-13 Palo Alto Research Center Incorporated Stressed material and shape memory material MEMS devices and methods for manufacturing
US7233048B2 (en) * 2005-08-26 2007-06-19 Innovative Micro Technology MEMS device trench plating process and apparatus for through hole vias
US7872432B2 (en) 2006-03-20 2011-01-18 Innovative Micro Technology MEMS thermal device with slideably engaged tether and method of manufacture
US7812703B2 (en) 2006-03-23 2010-10-12 Innovative Micro Technology MEMS device using NiMn alloy and method of manufacture
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Ｍｅｍｓスイッチ及びその製造方法
US8274200B2 (en) 2007-11-19 2012-09-25 Xcom Wireless, Inc. Microfabricated cantilever slider with asymmetric spring constant
CN101364494A (zh) * 2008-09-12 2009-02-11 嘉兴淳祥电子科技有限公司 无组装式按键制作工艺
JP5341579B2 (ja) * 2009-03-13 2013-11-13 日本電信電話株式会社 微細構造体の製造方法
US8289674B2 (en) 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

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