CN102623221B - 组合物以及制造方法 - Google Patents
组合物以及制造方法 Download PDFInfo
- Publication number
- CN102623221B CN102623221B CN201110463346.1A CN201110463346A CN102623221B CN 102623221 B CN102623221 B CN 102623221B CN 201110463346 A CN201110463346 A CN 201110463346A CN 102623221 B CN102623221 B CN 102623221B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal level
- switch
- contact
- construction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000203 mixture Substances 0.000 title abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000007547 defect Effects 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000010276 construction Methods 0.000 claims description 88
- 229910045601 alloy Inorganic materials 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 25
- 239000004033 plastic Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 67
- 238000000137 annealing Methods 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000007769 metal material Substances 0.000 description 21
- 230000008859 change Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 14
- 230000004927 fusion Effects 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 238000004070 electrodeposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000005300 metallic glass Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000002045 lasting effect Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008093 supporting effect Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910003286 Ni-Mn Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 229910000601 superalloy Inorganic materials 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/003—3D structures, e.g. superposed patterned layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/0486—Replacement and removal of components
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/975,090 US8826529B2 (en) | 2009-09-23 | 2010-12-21 | Method of forming a micro-electromechanical system device |
| US12/975090 | 2010-12-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102623221A CN102623221A (zh) | 2012-08-01 |
| CN102623221B true CN102623221B (zh) | 2016-12-07 |
Family
ID=45463245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110463346.1A Active CN102623221B (zh) | 2010-12-21 | 2011-12-21 | 组合物以及制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8826529B2 (enExample) |
| EP (1) | EP2468928B1 (enExample) |
| JP (1) | JP5872278B2 (enExample) |
| KR (1) | KR101983854B1 (enExample) |
| CN (1) | CN102623221B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8779886B2 (en) * | 2009-11-30 | 2014-07-15 | General Electric Company | Switch structures |
| US8643140B2 (en) * | 2011-07-11 | 2014-02-04 | United Microelectronics Corp. | Suspended beam for use in MEMS device |
| US8611137B2 (en) | 2011-11-23 | 2013-12-17 | Altera Corporation | Memory elements with relay devices |
| JP2014115209A (ja) * | 2012-12-11 | 2014-06-26 | Seiko Epson Corp | Ｍｅｍｓ素子、電子デバイス、高度計、電子機器および移動体 |
| US9663347B2 (en) * | 2015-03-02 | 2017-05-30 | General Electric Company | Electromechanical system substrate attachment for reduced thermal deformation |
| US9845235B2 (en) * | 2015-09-03 | 2017-12-19 | General Electric Company | Refractory seed metal for electroplated MEMS structures |
| GB2564434B (en) | 2017-07-10 | 2020-08-26 | Ge Aviat Systems Ltd | Power distribution switch for a power distribution system |
| US20240203669A1 (en) * | 2022-12-06 | 2024-06-20 | The Regents Of The University Of California | Bit rate-adapting resoswitch |
| US20240274387A1 (en) * | 2023-02-14 | 2024-08-15 | Texas Instruments Incorporated | Electromechanical switch |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050029109A1 (en) * | 2002-05-07 | 2005-02-10 | Gang Zhang | Method of electrochemically fabricating multilayer structures having improved interlayer adhesion |
| US20070222004A1 (en) * | 2006-03-23 | 2007-09-27 | Innovative Micro Technology | MEMS device using NiMn alloy and method of manufacture |
| CN101364494A (zh) * | 2008-09-12 | 2009-02-11 | 嘉兴淳祥电子科技有限公司 | 无组装式按键制作工艺 |
| US20100237738A1 (en) * | 2009-03-17 | 2010-09-23 | Charles Gordon Smith | Moving a free-standing structure between high and low adhesion states |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5696619A (en) | 1995-02-27 | 1997-12-09 | Texas Instruments Incorporated | Micromechanical device having an improved beam |
| US7126220B2 (en) | 2002-03-18 | 2006-10-24 | Nanonexus, Inc. | Miniaturized contact spring |
| US7247035B2 (en) | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
| US6803755B2 (en) | 1999-09-21 | 2004-10-12 | Rockwell Automation Technologies, Inc. | Microelectromechanical system (MEMS) with improved beam suspension |
| US6307169B1 (en) | 2000-02-01 | 2001-10-23 | Motorola Inc. | Micro-electromechanical switch |
| US6373007B1 (en) | 2000-04-19 | 2002-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Series and shunt mems RF switch |
| US6570750B1 (en) | 2000-04-19 | 2003-05-27 | The United States Of America As Represented By The Secretary Of The Air Force | Shunted multiple throw MEMS RF switch |
| US6788175B1 (en) | 2001-10-04 | 2004-09-07 | Superconductor Technologies, Inc. | Anchors for micro-electro-mechanical systems (MEMS) devices |
| ATE341098T1 (de) | 2001-11-09 | 2006-10-15 | Wispry Inc | Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren |
| US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
| US6699379B1 (en) | 2002-11-25 | 2004-03-02 | Industrial Technology Research Institute | Method for reducing stress in nickel-based alloy plating |
| US20040154925A1 (en) | 2003-02-11 | 2004-08-12 | Podlaha Elizabeth J. | Composite metal and composite metal alloy microstructures |
| JP3745744B2 (ja) * | 2003-04-16 | 2006-02-15 | 住友電気工業株式会社 | 金属構造体の製造方法およびその方法により製造した金属構造体 |
| US6876283B1 (en) | 2003-07-11 | 2005-04-05 | Iowa State University Research Foundation, Inc. | Tapered-width micro-cantilevers and micro-bridges |
| EP1683172B1 (en) | 2003-10-31 | 2007-12-26 | Nxp B.V. | Radio-frequency microelectromechanical systems and a method of manufacturing such systems |
| JP2005146405A (ja) | 2003-11-14 | 2005-06-09 | Toru Yamazaki | 電析積層合金薄板とその製造方法 |
| US20050248424A1 (en) * | 2004-05-07 | 2005-11-10 | Tsung-Kuan Chou | Composite beam microelectromechanical system switch |
| US7372348B2 (en) | 2004-08-20 | 2008-05-13 | Palo Alto Research Center Incorporated | Stressed material and shape memory material MEMS devices and methods for manufacturing |
| US7233048B2 (en) * | 2005-08-26 | 2007-06-19 | Innovative Micro Technology | MEMS device trench plating process and apparatus for through hole vias |
| US7872432B2 (en) | 2006-03-20 | 2011-01-18 | Innovative Micro Technology | MEMS thermal device with slideably engaged tether and method of manufacture |
| JP2009009884A (ja) * | 2007-06-29 | 2009-01-15 | Mitsubishi Electric Corp | Ｍｅｍｓスイッチ及びその製造方法 |
| US8274200B2 (en) | 2007-11-19 | 2012-09-25 | Xcom Wireless, Inc. | Microfabricated cantilever slider with asymmetric spring constant |
| JP5341579B2 (ja) * | 2009-03-13 | 2013-11-13 | 日本電信電話株式会社 | 微細構造体の製造方法 |
-
2010
- 2010-12-21 US US12/975,090 patent/US8826529B2/en active Active
-
2011
- 2011-12-14 EP EP11193469.1A patent/EP2468928B1/en active Active
- 2011-12-16 JP JP2011275135A patent/JP5872278B2/ja active Active
- 2011-12-20 KR KR1020110138516A patent/KR101983854B1/ko active Active
- 2011-12-21 CN CN201110463346.1A patent/CN102623221B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050029109A1 (en) * | 2002-05-07 | 2005-02-10 | Gang Zhang | Method of electrochemically fabricating multilayer structures having improved interlayer adhesion |
| US20070222004A1 (en) * | 2006-03-23 | 2007-09-27 | Innovative Micro Technology | MEMS device using NiMn alloy and method of manufacture |
| CN101364494A (zh) * | 2008-09-12 | 2009-02-11 | 嘉兴淳祥电子科技有限公司 | 无组装式按键制作工艺 |
| US20100237738A1 (en) * | 2009-03-17 | 2010-09-23 | Charles Gordon Smith | Moving a free-standing structure between high and low adhesion states |
Non-Patent Citations (1)
| Title |
|---|
| Synthesis and characterization of nickel tungsten alloys by electrodeposition;N.Eliaz等;《Electrochimica Acta》;20050505;第4卷(第50期);2893-2904 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2468928A3 (en) | 2014-08-20 |
| JP2012134144A (ja) | 2012-07-12 |
| JP5872278B2 (ja) | 2016-03-01 |
| KR101983854B1 (ko) | 2019-05-29 |
| KR20120070524A (ko) | 2012-06-29 |
| EP2468928B1 (en) | 2022-01-26 |
| US8826529B2 (en) | 2014-09-09 |
| EP2468928A2 (en) | 2012-06-27 |
| US20110163397A1 (en) | 2011-07-07 |
| CN102623221A (zh) | 2012-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102623221B (zh) | 组合物以及制造方法 | |
| US8354899B2 (en) | Switch structure and method | |
| EP2328160B1 (en) | Switch structures | |
| US8054148B2 (en) | Contact material, device including contact material, and method of making | |
| Néel et al. | Quantized conductance of a single magnetic atom | |
| US8018316B2 (en) | Electroless plating production of nickel and cobalt structures | |
| EP3553838B1 (en) | Thermoelectric module | |
| US20060274470A1 (en) | Contact material, device including contact material, and method of making | |
| EP1876614A2 (en) | Contact material, device including contact material, and method of making | |
| JP6854769B2 (ja) | 熱変形低減用の電気機械システム基板アタッチメント | |
| US7564330B2 (en) | Reed switch contact coating | |
| WO2004092435A1 (ja) | 金属構造体およびその製造方法 | |
| DE102008011175B4 (de) | Mikromechanischer Aktuator und Verfahren zu seiner Herstellung | |
| Hiltmann | Tastschalter in Bulk-Mikromechanik | |
| Nazarpour et al. | Metallic Electrodes; Restrictions and Future Prospective; A Survey on Recent Patents |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |