JP5872278B2 - マイクロ電気機械システム装置を形成する方法 - Google Patents

マイクロ電気機械システム装置を形成する方法 Download PDF

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Publication number
JP5872278B2
JP5872278B2 JP2011275135A JP2011275135A JP5872278B2 JP 5872278 B2 JP5872278 B2 JP 5872278B2 JP 2011275135 A JP2011275135 A JP 2011275135A JP 2011275135 A JP2011275135 A JP 2011275135A JP 5872278 B2 JP5872278 B2 JP 5872278B2
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Prior art keywords
contact
layer
alloy layer
switch structure
temperature
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Japanese (ja)
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JP2012134144A (ja
JP2012134144A5 (enExample
Inventor
アンドリュー・ジョセフ・ディトー
リード・コーダーマン
クリストファー・ケイメル
マルコ・アイミ
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General Electric Co
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General Electric Co
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/003—3D structures, e.g. superposed patterned layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/0486—Replacement and removal of components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0052—Special contact materials used for MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011275135A 2010-12-21 2011-12-16 マイクロ電気機械システム装置を形成する方法 Active JP5872278B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/975,090 US8826529B2 (en) 2009-09-23 2010-12-21 Method of forming a micro-electromechanical system device
US12/975,090 2010-12-21

Publications (3)

Publication Number Publication Date
JP2012134144A JP2012134144A (ja) 2012-07-12
JP2012134144A5 JP2012134144A5 (enExample) 2015-01-29
JP5872278B2 true JP5872278B2 (ja) 2016-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011275135A Active JP5872278B2 (ja) 2010-12-21 2011-12-16 マイクロ電気機械システム装置を形成する方法

Country Status (5)

Country Link
US (1) US8826529B2 (enExample)
EP (1) EP2468928B1 (enExample)
JP (1) JP5872278B2 (enExample)
KR (1) KR101983854B1 (enExample)
CN (1) CN102623221B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8779886B2 (en) * 2009-11-30 2014-07-15 General Electric Company Switch structures
US8643140B2 (en) * 2011-07-11 2014-02-04 United Microelectronics Corp. Suspended beam for use in MEMS device
US8611137B2 (en) * 2011-11-23 2013-12-17 Altera Corporation Memory elements with relay devices
JP2014115209A (ja) * 2012-12-11 2014-06-26 Seiko Epson Corp Mems素子、電子デバイス、高度計、電子機器および移動体
US9663347B2 (en) * 2015-03-02 2017-05-30 General Electric Company Electromechanical system substrate attachment for reduced thermal deformation
US9845235B2 (en) * 2015-09-03 2017-12-19 General Electric Company Refractory seed metal for electroplated MEMS structures
GB2564434B (en) 2017-07-10 2020-08-26 Ge Aviat Systems Ltd Power distribution switch for a power distribution system
US20230068451A1 (en) * 2021-08-30 2023-03-02 Texas Instruments Incorporated Methods and apparatus to thermally actuate microelectromechanical structures devices
US12537147B2 (en) * 2022-12-06 2026-01-27 The Regents Of The University Of California Bit rate-adapting resoswitch
US12700557B2 (en) * 2023-02-14 2026-08-04 Texas Instruments Incorporated Electromechanical switch
US12651720B2 (en) 2023-02-14 2026-06-09 Texas Instruments Incorporated Electromechanical switch
US20260015222A1 (en) * 2024-07-12 2026-01-15 Menlo Microsystems, Inc. Two stage plating for reduced Ni and NiO layer formation

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696619A (en) 1995-02-27 1997-12-09 Texas Instruments Incorporated Micromechanical device having an improved beam
US7126220B2 (en) 2002-03-18 2006-10-24 Nanonexus, Inc. Miniaturized contact spring
US7247035B2 (en) 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US6803755B2 (en) 1999-09-21 2004-10-12 Rockwell Automation Technologies, Inc. Microelectromechanical system (MEMS) with improved beam suspension
US6307169B1 (en) 2000-02-01 2001-10-23 Motorola Inc. Micro-electromechanical switch
US6373007B1 (en) 2000-04-19 2002-04-16 The United States Of America As Represented By The Secretary Of The Air Force Series and shunt mems RF switch
US6570750B1 (en) 2000-04-19 2003-05-27 The United States Of America As Represented By The Secretary Of The Air Force Shunted multiple throw MEMS RF switch
US6788175B1 (en) 2001-10-04 2004-09-07 Superconductor Technologies, Inc. Anchors for micro-electro-mechanical systems (MEMS) devices
CN100550429C (zh) 2001-11-09 2009-10-14 图恩斯通系统公司 具有触头和支座凸块的mems器件及其相关方法
US6624003B1 (en) * 2002-02-06 2003-09-23 Teravicta Technologies, Inc. Integrated MEMS device and package
US20050029109A1 (en) * 2002-05-07 2005-02-10 Gang Zhang Method of electrochemically fabricating multilayer structures having improved interlayer adhesion
US6699379B1 (en) 2002-11-25 2004-03-02 Industrial Technology Research Institute Method for reducing stress in nickel-based alloy plating
US20040154925A1 (en) 2003-02-11 2004-08-12 Podlaha Elizabeth J. Composite metal and composite metal alloy microstructures
JP3745744B2 (ja) * 2003-04-16 2006-02-15 住友電気工業株式会社 金属構造体の製造方法およびその方法により製造した金属構造体
US6876283B1 (en) 2003-07-11 2005-04-05 Iowa State University Research Foundation, Inc. Tapered-width micro-cantilevers and micro-bridges
DE602004010927T2 (de) 2003-10-31 2008-12-24 Nxp B.V. Mikroelektromechanische hochfrequenz-systeme und verfahren zur herstellung solcher systeme
JP2005146405A (ja) 2003-11-14 2005-06-09 Toru Yamazaki 電析積層合金薄板とその製造方法
US20050248424A1 (en) * 2004-05-07 2005-11-10 Tsung-Kuan Chou Composite beam microelectromechanical system switch
US7372348B2 (en) 2004-08-20 2008-05-13 Palo Alto Research Center Incorporated Stressed material and shape memory material MEMS devices and methods for manufacturing
US7233048B2 (en) * 2005-08-26 2007-06-19 Innovative Micro Technology MEMS device trench plating process and apparatus for through hole vias
US7872432B2 (en) 2006-03-20 2011-01-18 Innovative Micro Technology MEMS thermal device with slideably engaged tether and method of manufacture
US7812703B2 (en) 2006-03-23 2010-10-12 Innovative Micro Technology MEMS device using NiMn alloy and method of manufacture
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Memsスイッチ及びその製造方法
WO2009067222A1 (en) 2007-11-19 2009-05-28 Xcom Wireless, Inc. Microfabricated cantilever slider with asymmetric spring constant
CN101364494A (zh) * 2008-09-12 2009-02-11 嘉兴淳祥电子科技有限公司 无组装式按键制作工艺
JP5341579B2 (ja) * 2009-03-13 2013-11-13 日本電信電話株式会社 微細構造体の製造方法
US8289674B2 (en) * 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

Also Published As

Publication number Publication date
US20110163397A1 (en) 2011-07-07
EP2468928A3 (en) 2014-08-20
US8826529B2 (en) 2014-09-09
CN102623221B (zh) 2016-12-07
JP2012134144A (ja) 2012-07-12
KR20120070524A (ko) 2012-06-29
CN102623221A (zh) 2012-08-01
EP2468928B1 (en) 2022-01-26
EP2468928A2 (en) 2012-06-27
KR101983854B1 (ko) 2019-05-29

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