CN102834901B - 用于半导体基板的剥落 - Google Patents

用于半导体基板的剥落 Download PDF

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CN102834901B
CN102834901B CN201180005693.8A CN201180005693A CN102834901B CN 102834901 B CN102834901 B CN 102834901B CN 201180005693 A CN201180005693 A CN 201180005693A CN 102834901 B CN102834901 B CN 102834901B
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S·W·比戴尔
K·E·弗盖尔
P·A·劳洛
D·萨达纳
D·沙杰地
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Core Usa Second LLC
GlobalFoundries Inc
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Abstract

一种自半导体基板的锭剥落层的方法，其包含在该半导体基板的锭上形成金属层，其中在该金属层中的拉伸应力被配置为造成该锭内的开裂；并且在该开裂处自该锭移除该层。一种自半导体基板的锭剥落层的系统，其包含在该半导体基板的锭上形成金属层，其中在该金属层中的拉伸应力被配置为造成该锭内的开裂，且其中该层被配置为在该开裂处自该锭移除。

Description

用于半导体基板的剥落
相关申请的交叉引用
本申请案要求2009年6月9日申请的美国临时申请第61/185,247号的优先权。本申请案也涉及代理人案号YOR920100056US1、YOR920100058US1、YOR920100060US1及FIS920100006US1，其各转让给国际商业机器公司(International Business Machines Corporation，IBM)并于同日申请作为本申请案，其全文以引用的方式并入本文中。
技术领域
本发明针对使用应力诱发性基板剥落（spalling）的半导体基板工艺。
背景技术
基于半导体的太阳能电池其大部分成本可能在于生产在其上建立该太阳能电池的半导体基板层的成本。除了与基板材料分离和提纯相关的能源成本外，存在相当高的关于该基板材料锭的生长的成本。为形成基板层，该基板锭可用锯切割以将该层自锭分离。在该切割的过程中，该半导体基板材料的一部分可能会因为锯口而损失。
发明内容
在一方面，一种自半导体基板锭剥落层的方法包含在该半导体基板锭上形成金属层，其中在该金属层内的拉伸应力被配置为造成该锭内的开裂；并且在该开裂处自该锭上移除该层。
在一方面，一种自半导体基板锭剥落层的系统包含形成金属层 在该半导体基板锭上，其中在该金属层内的拉伸应力被配置为造成该锭内的开裂，并且其中该层被配置为在该开裂处自该锭移除。
额外特征通过本示范性实施例的技术而实现。其它实施例在此处详细描述并视为申请专利范围的一部分。为更能理解该示范性实施例的特征，参考实施方式及图标。
附图说明
现在参考附图，其中相同的部件在各附图中被相同地编号：
图1说明了用于剥落半导体基板锭的方法的实施例。
图2说明具有籽晶层的半导体基板锭的实施例。
图3说明具有粘着层的半导体基板锭的实施例。
图4说明在半导体基板锭上形成受应力金属层的系统的实施例。
图5说明具有受应力金属层的半导体基板锭的实施例。
图6说明半导体基板锭的剥落层的实施例。
图7说明半导体基板锭的剥落层的实施例的俯视图。
具体实施方式
本发明通过以下详细讨论的示范性实施例提供剥落半导体基板的系统及方法的实施例。
受拉伸应力的金属层或金属合金层可形成于半导体材料锭的表面上，以通过称为剥落的工艺以诱发在该锭内的开裂。具有受控厚度的半导体基板层可在无切口损失的情况下于该开裂处自该锭分离。受应力的金属层可由电镀或无电极电镀形成。可使用剥落以成本有效地形成用于任意半导体制造应用中的半导体基板层，例如用于光伏(photovoltaic，PV)电池的相对薄的半导体基板晶圆，或是用于混频信号、射频或是微机电(MEMS)应用的相对厚的绝缘层上半导体。
图1说明剥落半导体基板锭的方法100的实施例。参照图2至图7讨论图1。在某些实施例中，包含锭的半导体材料可包含锗(Ge)或单晶或多晶硅(Si)，并且可为n型或是p型。对n型半导体材料，块101是可选的。在块101，以在即将被剥落的半导体材料锭201的表面上形成籽晶层202来预先处理该锭的表面，如图2所示。由于直接在p型材料上电镀是困难的（这是因为当p型锭201受到相对于电镀液的负偏压时可能形成表面耗尽层），因此该籽晶层202为p型半导体材料(其中空穴是多数载流子)的锭201所必需的。该籽晶层202可包含单层或多层，且可包含任何适当的材料。在一些实施例中，该籽晶层202可包含钯(Pd)，其可通过浸泡在包含钯溶液的浴槽里以涂敷到锭201。在其它实施例中，其中该锭201包含硅，该籽晶层202的形成可包含在锭201上形成钛(Ti)层，且在该钛层上形成银(Ag)层。该钛与银层可以都小于约20奈米(nm)厚。钛可在低温下对硅形成良好粘着接合，且银表面在电镀期间抗氧化。该籽晶层202可以任何适当的方法形成，包含但不局限于无电极电镀、蒸发、溅射、化学表面制备、物理汽相沉积（PVD）或是化学汽相沉积(CVD)。在一些实施例中该籽晶层202可以在形成后进行退火处理。
在块102，金属的粘着层301形成于该锭201上。对于包括p型锭201的实施例，该粘着层301是可选的，且如图3所示形成在籽晶层202上。对于包括n型锭201的实施例，粘着层直接形成于该锭201上，且没有籽晶层202。该粘着层301可以包含金属，包含但不局限于镍(Ni)，且可以电镀或任何其它适当的工艺形成。在一些实施例中粘着层301可以小于100nm厚。可在该粘着层301的形成之后进行退火以提升在金属粘着层301、籽晶层202(对于p型半导体材料)以及半导体锭201之间的粘着。退火使粘着层301与半导体材料201反应。退火可以在相对低温下进行，在一些实施例中低于500℃。在一些实施例中可于退火工艺使用感应加热，其允许加热金属粘着层301而不加热锭201。
在块103，电镀(或电化学镀)通过将包括粘着层301的锭201的表面浸泡于电镀槽401而进行，且将相对于电镀槽401的负偏压402施加到锭201，如图4所示。该电镀槽401可包括任何在无论是自动催化(无电极电镀)或者在施加外部偏压402时，都能够在锭201上沉积受应力的金属层501(如图5所示)的化学溶液。在示范性实施例中，电镀槽401包含300克/升(g/l)的NiCl2水溶液以及25克/升硼酸。在一些实施例中该电镀槽温度可以介于0℃到100℃之间，而在一些示范性实施例中可以介于10℃到60℃之间。锭201中的电镀电流在电镀期间可变化；然而，在一些实施例中该电镀电流可以在大约50mA/cm2，产生约1微米/分钟的沉积速率。电镀前，如果粘着层301上形成有任何氧化层，这些氧化物层可以化学地被移除。例如，经稀释的HCl溶液可用于自包括镍的粘着层301移除氧化层。
电镀导致受应力的金属层501形成于粘着层301上，如图5所示。图5显示包括p型半导体材料锭201的实施例，其具有籽晶层202。如果该锭201包括n型半导体材料，则籽晶层202不存在。在一些实施例中该受应力的金属层501可以介于1到50微米厚，及在一些示范性实施例中介于4到15微米厚。在一些实施例中金属层501内包含的拉伸应力大于约100百万帕斯卡(MPa)。
在块104，半导体层601通过在开裂603处的剥落与锭201分离，如图6所示。图6显示包括p型半导体材料锭201的实施例，其具有籽晶层202。如果锭201包括n型半导体材料，则籽晶层202不存在。剥落可以配合具有任何晶体取向的锭201使用；然而，如果开裂603取向为沿着包括锭201的材料的自然分裂平面(硅和锗为<111>)，则可以在粗糙度及厚度均匀性方面改良开裂603。
剥落可能是受控制的或自发的。在受控制的剥落(如图6所示)，处理层602涂敷到金属层501，且用来诱发在锭201内的开裂以自该锭201沿着开裂603移除该半导体层601。该处理层602可以包括弹性粘着剂，其在一些实施例中可溶于水。使用刚性材料用于处理层602可能使开裂的剥落模式无法实行。因此，在一些实施例中 该处理层602可进一步包括具有曲率半径小于五米的材料，及在一些示范性实施例中小于1米。在自发性剥落时，包含在受应力金属层501内的应力致使半导体层601及该受应力金属层501在开裂处自该锭201自发地分离它们本身，无需使用处理层602。加热该受应力金属501可使受控剥落变为自发剥落。加热趋于增加在受应力金属501内的拉伸应力，且可以引发自发性剥落。加热可在任何适当方式下施行，包含但不局限于：灯、激光、电阻或是感应加热。
图7说明在底层602上的半导体层601的实施例的俯视图。取决于半导体层601将用于何种应用，可移除该处理层602，且可蚀刻去除受应力金属层501、粘着层301及籽晶层202(在p型锭201的实例中)。半导体层601可以具有任何需要的厚度，且可以用于任何需要的应用。在一些实施例中半导体层601可包括单晶或多晶硅。
在块105，可使用锭201重复块101至104。由于没有切口损失，该锭201的各层可以相对少的耗损自锭201被移除，使得可从单个锭形成的半导体材料的层数最大化。
示范性实施例的技术效果及效益包含减少在半导体制造中的损耗。
此处所使用的术语仅以描述特殊实施例为目的而不是为本发明设限。本文中所使用单数形式的「一个」、「一种」及「该」意欲包含复数形式，除非内容清楚地另有所指。在此将进一步了解使用于此说明书的术语「包含」及/或「包括」具体指出所陈述的特征、整数、步骤、操作、组件及/或组件的存在，但其中并不排除存在或增设或多个的其它特征、整数、步骤、操作、组件、组件及/或其群组。
相应的结构、材料、行为及切方法或步骤的同等物加上在以下申请专利范围内的功能组件意欲包含任何执行结合其它具体主张的组件的功能的的结构、材料或行为。本发明的描述已以图标及描述为目的提交，但并非详尽无遗或是为说明书内的本发明设限。在不偏离本发明范畴及精神下，许多修改及变化对本领域技术人员将 是显而易见的。选择并描述该实施例是为本发明以及实际应用的原理作最佳解释，且使得其它本领域技术人员以了解本发明的各种修改的各种实施例系适合所考虑的特定用途。
 工业实用性
本发明在制造半导体基板方面是有效的。

Claims (17)

1.一种从半导体基板的锭(201)剥落层(601)的方法，所述方法包括：
在所述锭(201)上形成籽晶层(202)；
在所述籽晶层(202)上直接形成粘着层(301)，其中所述粘着层包括镍Ni；
在所述粘着层形成之后进行退火；
在所述粘着层上形成金属层(501)，其中所述金属层中的拉伸应力被配置为造成在所述锭内的开裂(603)；以及
在所述开裂处自所述锭(201)移除所述层(601)。
2.如权利要求1的方法，其中所述金属层(501)包括镍Ni。
3.如权利要求1的方法，其中形成所述金属层(501)包括电镀。
4.如权利要求1的方法，其中所述籽晶层(202)包括钯Pd。
5.如权利要求1的方法，其中所述半导体基板包括硅，及所述籽晶层(202)包括银Ag层下的钛Ti层。
6.如权利要求1的方法，其进一步包括在低于约500℃的温度将所述粘着层(301)退火。
7.如权利要求1的方法，其中在所述开裂(603)处自所述锭(201)移除所述半导体基板的所述层(601)包括将处理层(602)粘着至所述金属层(501)。
8.如权利要求7的方法，其中所述处理层(602)具有小于5米的曲率半径。
9.如权利要求1的方法，其中所述金属层(501)的厚度小于50微米。
10.如权利要求1的方法，其中所述金属层(501)中的拉伸应力大于约100百万帕斯卡。
11.一种自半导体基板的锭(201)剥落层(601)的装置，所述装置包括：
在所述锭(201)上形成籽晶层(202)；
在所述籽晶层(202)上直接形成粘着层(301)，其中所述粘着层包括镍Ni；
在所述粘着层形成之后进行退火；
形成于所述粘着层上的金属层(501)，其中在所述金属层内的拉伸应力被配置为造成在所述锭内的开裂(603)，且其中所述层(601)被配置为在所述开裂处自所述锭被移除。
12.如权利要求11的装置，其中所述金属层(501)包括镍Ni。
13.如权利要求11的装置，其进一步包括形成于所述锭(201)上的籽晶层(202)，其中所述半导体基板包括p型半导体基板。
14.如权利要求11的装置，其进一步包括粘着至所述金属层(501)的处理层(602)。
15.如权利要求14的装置，其中所述处理层(602)具有小于5米的曲率半径。
16.如权利要求11的装置，其中所述金属层(501)的厚度小于50微米。
17.如权利要求11的装置，其中所述金属层(501)中的拉伸应力大于约100百万帕斯卡。
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