CN113903656A - 一种碳化硅晶圆加工工艺 - Google Patents

一种碳化硅晶圆加工工艺 Download PDF

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CN113903656A
CN113903656A CN202111162163.6A CN202111162163A CN113903656A CN 113903656 A CN113903656 A CN 113903656A CN 202111162163 A CN202111162163 A CN 202111162163A CN 113903656 A CN113903656 A CN 113903656A
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严立巍
符德荣
陈政勋
文锺
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Zhejiang Tongxinqi Technology Co ltd
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Abstract

本发明公开一种碳化硅晶圆加工工艺，包括以下步骤：S1、将碳化硅基板永久键合在硅载板上；S2、完成碳化硅基板的减薄及除高温制程外的其他晶圆正面制程；S3、将碳化硅基板转移到石墨托盘上，解除碳化硅基板与硅载板的永久键合，移除硅载板；S4、利用石墨托盘承载碳化硅基板进行高温制程；S5、碳化硅基板背面键合玻璃载板，移除石墨托盘；S6、碳化硅基板正面键合玻璃载板，解键合移除背面玻璃载板；S7、完成碳化硅基板背面晶圆制程；S8、将碳化硅基板转移到切割模框上，解键合移除正面玻璃载板，完成晶圆的切割。本发明利用硅载板承载碳化硅基板进行减薄，利用石墨托盘承载碳化硅基板进行高温制程，克服了碳化硅材料硬度大、活化温度高的加工难题。

Description

一种碳化硅晶圆加工工艺
技术领域
本发明涉及半导体加工技术领域，具体的是一种碳化硅晶圆加工工艺。
背景技术
碳化硅作为新一代的宽禁带半导体材料，在功率半导体领域具有极其优异的性能表现，也是功率半导体器件发展的前沿和未来方向。碳化硅是一种由硅和碳构成的化合物半导体材料，碳化硅材料有禁带宽度大、击穿场强高、热导率大、饱和速度大、最大工作温度高等优良特性，这些优良特性也使得碳化硅电子器件可以在高电压、高发热量、高频率的环境下工作，故而与砷化镓、硅相比，碳化硅相比被认为是制作高功率电子器件的最佳材料。
目前，在碳化硅半导体生产制造的过程中存在诸多难点。首先，碳化硅材料高温制程所需的温度较高，常规的玻璃载板工艺不能满足要求，高温处理会使黏着剂分解，导致玻璃载板脱落，不能有效支撑碳化硅晶圆，因此必须开发一种新的载板工艺以适应碳化硅晶圆的加工；其次，碳化硅功率半导体产品的制造过程后段，都会进行背面减薄背金工艺，但是现行的硅器件产品的生产线上的减薄工艺只适用于硅圆片的减薄加工，由于碳化硅硬度较大，研磨减薄时载板难以承受其压力和转矩，同样存在裂片的风险。
发明内容
为解决上述背景技术中提到的不足，本发明的目的在于提供一种碳化硅晶圆加工工艺，利用硅载板沉积SiO2层与碳化硅基板形成永久键合，然后进行基板的减薄，硅载板的硬度可以承受减薄时较大的压力和转向力，同时采用石墨托盘承载碳化硅基板进行高温制程，克服了碳化硅基板高温制程中的温度对载板的限制，可以安全有效的进行碳化硅基板的高温回火。
本发明的目的可以通过以下技术方案实现：
一种碳化硅晶圆加工工艺，包括以下步骤：
S1、在碳化硅基板背面通过CVD沉积SiO2层，然后将碳化硅基板背面与硅载板键合，利用SiO2使碳化硅基板与硅载板形成永久性键合；
S2、完成碳化硅基板的减薄，同时完成除高温制程外的其他晶圆正面制程；
S3、将完成正面晶圆制程的碳化硅基板转移到石墨托盘上，然后将石墨托盘放入蚀池中蚀刻SiO2层，解除碳化硅基板与硅载板的永久键合，移除硅载板后将碳化硅基板冲洗干净；
S4、利用石墨托盘承载碳化硅基板进行高温制程；
S5、将完成高温制程的碳化硅基板取出，碳化硅基板背面涂布黏着剂并键合玻璃载板，移除石墨托盘；
S6、于碳化硅基板正面背面涂布黏着剂并键合玻璃载板，利用激光穿透碳化硅基板背面玻璃载板使释放剂分解,使碳化硅基板背面玻璃载板解键合，移除碳化硅基板背面玻璃载板；
S7、完成碳化硅基板背面晶圆制程；
S8、将碳化硅基板转移到切割模框上，利用激光穿透碳化硅基板正面玻璃载板使释放剂分解,使碳化硅基板正面玻璃载板解键合，移除碳化硅基板正面玻璃载板，完成晶圆的切割。
进一步优选地，步骤S1中一次性将多块碳化硅基板与硅载板键合，具体步骤为：
S101、将硅载板和碳化硅基板清洗干净，通过电浆对硅基载板表面处理，激发硅基载板原子活性键；
S102、将碳化硅基板水平排列键合在硅基载板表面；
S103、将放置好碳化硅基板的硅载板放入高温炉管中进行高温回火，使碳化硅基板与硅基载板形成永久键合结构。
进一步优选地，步骤S103中高温回火的温度为800-1400℃，高温炉管的升温速率小于15℃/min。
进一步优选地，步骤S3中石墨托盘表面对应碳化硅基板处开设有凹槽，所述凹槽大小与碳化硅基板尺寸契合。
进一步优选地，步骤S3中利用蚀刻液对SiO2和Si的蚀刻选择比不同，蚀刻除去SiO2层。
本发明的有益效果：
本发明利用硅载板沉积SiO2层与碳化硅基板形成永久键合，然后进行碳化硅基板的减薄，硅载板的硬度可以承受减薄时较大的压力和转向力，同时采用石墨托盘承载碳化硅基板进行高温制程，克服了碳化硅基板高温制程中的温度对载板的限制，可以安全有效的进行碳化硅基板的高温回火。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明步骤S1的工艺成形示意图；
图2是本发明步骤S3的工艺成形示意图；
图3是本发明步骤S5的工艺成形示意图；
图4是本发明步骤S6的工艺成形示意图；
图5是本发明步骤S8的工艺成形示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“开孔”、“上”、“下”、“厚度”、“顶”、“中”、“长度”、“内”、“四周”等指示方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的组件或元件必须具有特定的方位，以特定的方位构造和操作，因此不能理解为对本发明的限制。
如图1-5所示，一种碳化硅晶圆加工工艺，包括以下步骤：
S1、在碳化硅基板背面通过CVD沉积SiO2层，硅载板和碳化硅基板清洗干净后通过电浆对硅基载板表面处理，再将多块小尺寸碳化硅基板按照一定的图案与大尺寸的硅载板键合，最后放入800-1200℃高温炉管中进行高温回火，高温炉管的升温速率12℃/min，使碳化硅基板与硅基载板形成永久键合结构；
S2、完成碳化硅基板的减薄，同时完成除高温制程外的其他晶圆正面制程；
S3、将完成正面晶圆制程的碳化硅基板转移到石墨托盘上，石墨托盘表面有与碳化硅基板处一一对应凹槽，防止碳化硅基板解键合后脱落，然后将石墨托盘放入蚀池中利用蚀刻液对SiO2和Si的蚀刻选择比不同蚀刻除去SiO2层，解除碳化硅基板与硅载板的永久键合，移除硅载板后将碳化硅基板冲洗干净；
S4、利用石墨托盘承载碳化硅基板进行高温制程；
S5、将完成高温制程的碳化硅基板取出，碳化硅基板背面涂布黏着剂并键合玻璃载板，移除石墨托盘；
S6、于碳化硅基板正面背面涂布黏着剂并键合玻璃载板，利用激光穿透碳化硅基板背面玻璃载板使释放剂分解,使碳化硅基板背面玻璃载板解键合，移除碳化硅基板背面玻璃载板；
S7、完成碳化硅基板背面晶圆制程；
S8、将碳化硅基板转移到切割模框上，利用激光穿透碳化硅基板正面玻璃载板使释放剂分解,使碳化硅基板正面玻璃载板解键合，移除碳化硅基板正面玻璃载板，完成晶圆的切割。
在本说明书的描述中，参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。

Claims (5)

1.一种碳化硅晶圆加工工艺，其特征在于，包括以下步骤：
S1、在硅载板表面通过CVD沉积SiO2层，然后将碳化硅基板背面与硅载板键合，利用SiO2使碳化硅基板与硅载板形成永久性键合，；
S2、完成碳化硅基板的减薄，同时完成除高温制程外的其他晶圆正面制程；
S3、将完成正面晶圆制程的碳化硅基板转移到石墨托盘上，然后将石墨托盘放入蚀池中蚀刻SiO2层，解除碳化硅基板与硅载板的永久键合，移除硅载板后将碳化硅基板冲洗干净；
S4、利用石墨托盘承载碳化硅基板进行高温制程；
S5、将完成高温制程的碳化硅基板取出，碳化硅基板背面涂布黏着剂并键合玻璃载板，移除石墨托盘；
S6、于碳化硅基板正面背面涂布黏着剂并键合玻璃载板，利用激光穿透碳化硅基板背面玻璃载板使释放剂分解,使碳化硅基板背面玻璃载板解键合，移除碳化硅基板背面玻璃载板；
S7、完成碳化硅基板背面晶圆制程；
S8、将碳化硅基板转移到切割模框上，利用激光穿透碳化硅基板正面玻璃载板使释放剂分解,使碳化硅基板正面玻璃载板解键合，移除碳化硅基板正面玻璃载板，完成晶圆的切割。
2.根据权利要求1所述的碳化硅晶圆加工工艺，其特征在于，所述步骤S1中一次性将多块碳化硅基板与硅载板键合，具体步骤为：
S101、将硅载板和碳化硅基板清洗干净，通过电浆对硅基载板表面处理，激发硅基载板原子活性键；
S102、将碳化硅基板水平排列键合在硅基载板表面；
S103、将放置好碳化硅基板的硅载板放入高温炉管中进行高温回火，使碳化硅基板与硅基载板形成永久键合结构。
3.根据权利要求2所述的碳化硅晶圆加工工艺，其特征在于，所述步骤S103中高温回火的温度为800-1400℃，高温炉管的升温速率小于15℃/min。
4.根据权利要求1所述的碳化硅晶圆加工工艺，其特征在于，所述步骤S3中石墨托盘表面对应碳化硅基板处开设有凹槽，所述凹槽大小与碳化硅基板尺寸契合。
5.根据权利要求1所述的碳化硅晶圆加工工艺，其特征在于，所述步骤S3中利用蚀刻液对SiO2和Si的蚀刻选择比不同，蚀刻除去SiO2层。
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CN115506013A (zh) * 2022-08-30 2022-12-23 中晟鲲鹏光电半导体有限公司 一种SiC晶片的外延生产工艺

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* Cited by examiner, † Cited by third party
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CN114883187A (zh) * 2022-07-12 2022-08-09 成都功成半导体有限公司 一种碳化硅晶圆背面制程加工工艺
CN114883187B (zh) * 2022-07-12 2022-09-06 成都功成半导体有限公司 一种碳化硅晶圆背面制程加工工艺
CN115506013A (zh) * 2022-08-30 2022-12-23 中晟鲲鹏光电半导体有限公司 一种SiC晶片的外延生产工艺
CN115506013B (zh) * 2022-08-30 2024-05-03 中晟鲲鹏光电半导体有限公司 一种SiC晶片的外延生产工艺

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