CN113013062A - 一种化合物半导体基板与硅基载板永久键合方法 - Google Patents
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明属于半导体制造领域,公开一种化合物半导体基板与硅基载板永久键合方法,包括以下步骤:S1、将硅基载板和化合物半导体基板清洗干净并去除自然氧化层,通过电浆对硅基载板表面处理,激发硅基载板原子活性键;S2、将化合物半导体基板键合在硅基载板表面;S3、将放置好化合物半导体基板的硅基载板放入高温炉管中进行高温回火,使化合物半导体基板与硅基载板形成永久键合结构;S4、将与硅基载板键合后的化合物半导体基板进行后续晶圆制程。本发明将小尺寸化合物半导体基板永久性键合于硅基载板上,实现了利用现行的主力尺寸硅片的生产线量产化合物半导体元件,可以一次进行多片化合物半导体晶圆的制造,提高了化合物半导体晶圆的产线效益。
Description
技术领域
本发明涉及半导体制造领域,具体的是一种化合物半导体基板与硅基载板永久键合方法。
背景技术
半导体材料可分为单质半导体及化合物半导体两类,前者如硅(Si)、锗(Ge)等所形成的半导体,后者为砷化镓(GaAs)、氮化镓(GaN)、碳化硅(SiC)等化合物形成。半导体在过去主要经历了三代变化,砷化镓(GaAs)、氮化镓(GaN)和碳化硅(SiC)半导体分别作为第二代和第三代半导体的代表,相比第一代半导体高频性能、高温性能优异很多,制造成本更为高昂,可谓是半导体中的新贵。
化合物半导体能够在超高电压(>8000V)IGBT及超高频(>300KHz)的MOSFET元件上展现特佳的性能,但目前长晶材料的量产技术只能将基板尺寸局限在6寸及6寸以下,与现行硅片主力的8寸/12寸工艺不相容。由于绝大多数的制程工艺类似,若尺寸吻合,则可在8寸硅片的量产线中嵌入少许特殊针对SiC或GaN工艺的制程设备即可实施量产,远比重新设立小尺寸的SiC或GaN的产线效益高的多。因此,亟需一种适用于小尺寸化合物半导体晶圆制造工艺,以实现其规模化生产。
发明内容
为解决上述背景技术中提到的不足,本发明的目的在于提供一种化合物半导体基板与硅基载板永久键合方法,本发明工艺通过电浆激发硅基载板原子活性键后将化合物半导体基板排列在硅基载板表面,再通过高温回火使化合物半导体基板与硅基载板形成永久键合结构,将小尺寸化合物半导体基板永久性键合于硅基载板上,再进行后续的化合物半导体基板元件制造,实现了利用现行的主力尺寸硅片的生产线量产化合物半导体基板元件,可以一次进行多片化合物半导体晶圆的制造,提高了化合物半导体晶圆的产线效益。
本发明的目的可以通过以下技术方案实现:
一种化合物半导体基板与硅基载板永久键合方法,包括以下步骤:
S1、将硅基载板和化合物半导体基板清洗干净并去除自然氧化层,通过电浆对硅基载板表面处理,激发硅基载板原子活性键;
S2、按照设计图案将化合物半导体基板水平排列键合在硅基载板表面;
S3、将放置好化合物半导体基板的硅基载板放入高温炉管中进行高温回火,使化合物半导体基板与硅基载板形成永久键合结构;
S4、将与硅基载板键合后的化合物半导体基板进行后续晶圆制程。
进一步优选地,所述化合物半导体基板包括砷化镓基板、氮化镓基板和碳化硅基板,所述化合物半导体基板为碳化硅基板时先完成高温制程再进行永久键合硅基载板。
进一步优选地,步骤S2中高温回火的温度为800-1400℃,高温炉管的升温速率小于15℃/min。
进一步优选地,步骤S3中化合物半导体基板和硅基载板永久键合后厚度小于1500μm,所述硅基载板直径大于化合物半导体基板直径。
进一步优选地,步骤S4中后续晶圆制程包括晶圆正面制程和晶圆背面制程。
进一步优选地,晶圆正面制程完成后在化合物半导体基板正面暂时键合玻璃载板,去除硅基载板并完成化合物半导体基板背面减薄后再进行晶圆背面制程。
本发明的有益效果:
本发明工艺通过电浆激发硅基载板原子活性键后将化合物半导体基板排列在硅基载板表面,再通过高温回火使化合物半导体基板与硅基载板形成永久键合结构,将小尺寸化合物半导体基板永久性键合于硅基载板上,再进行后续的化合物半导体基板元件制造,实现了利用现行的主力尺寸硅片的生产线量产化合物半导体基板元件,可以一次进行多片化合物半导体晶圆的制造,提高了化合物半导体晶圆的产线效益。其中,利用电浆处理硅基载板表面,激发硅基载板表面原子活性键(Si-H键或Si-O键),然后通过高温回火使化合物半导体基板与硅基载板形成永久键合结构,该键合结构牢固可靠,在进行后续的晶圆制程中可以有效防止化合物半导体基板发生位移或应力损伤,小于15℃/min的升温速度可以保证化合物半导体基板与硅基载板形成永久键结的同时不破坏硅基载板。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例中硅基载板和小尺寸化合物半导体基板键合结构示意图;
图2是本发明图1的A-A位置剖视图。
图中:
1-8寸硅基载板,2-4寸化合物半导体基板,3-3寸化合物半导体基板,4-12寸硅基载板,5-6寸化合物半导体基板。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“开孔”、“上”、“下”、“厚度”、“顶”、“中”、“长度”、“内”、“四周”等指示方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的组件或元件必须具有特定的方位,以特定的方位构造和操作,因此不能理解为对本发明的限制。
实施例1
一种化合物半导体基板与硅基载板永久键合方法,包括以下步骤:
S1、将硅基载板和化合物半导体基板清洗干净并去除自然氧化层,通过电浆对硅基载板表面处理,激发硅基载板原子活性键;
S2、按照设计图案将化合物半导体基板水平排列键合在硅基载板表面,键合后晶圆与硅基载板的总厚度为700μm,其中硅基载板厚度为450μm,化合物半导体基板厚度为250μm,硅基载板为8寸载板,化合物半导体基板为四个,包括两个3寸基板和两个4寸基板,四个化合物半导体基板水平排列键合在硅基载板表面,如图1(a)所示;
S3、将放置好化合物半导体基板的硅基载板放入高温炉管中以10℃/min的升温速率加热至1400℃,使化合物半导体基板与硅基载板形成永久键合;
S4、将与硅基载板键合后的化合物半导体基板进行后续晶圆制程。
化合物半导体基板为氮化镓基板。
步骤S4中后续晶圆制程包括晶圆正面制程和晶圆背面制程。
晶圆正面制程完成后在化合物半导体基板正面暂时键合玻璃载板,去除硅基载板并完成化合物半导体基板背面减薄后再进行晶圆背面制程。
实施例2
一种化合物半导体基板与硅基载板永久键合方法,包括以下步骤:
S1、将硅基载板和化合物半导体基板清洗干净并去除自然氧化层,通过电浆对硅基载板表面处理,激发硅基载板原子活性键;
S2、按照设计图案将化合物半导体基板水平排列键合在硅基载板表面,键合后晶圆与硅基载板的总厚度为800μm,其中硅基载板厚度为500μm,化合物半导体基板厚度为300μm,硅基载板为12寸载板,化合物半导体基板为四个,包括两个4寸基板和两个6寸基板,四个化合物半导体基板水平排列键合在硅基载板表面,如图1(b)所示;
S3、将放置好化合物半导体基板的硅基载板放入高温炉管中以10℃/min的升温速率加热至1400℃,使化合物半导体基板与硅基载板形成永久键合;
S4、将与硅基载板键合后的化合物半导体基板进行后续晶圆制程。
化合物半导体基板为碳化硅基板,步骤S2中化合物半导体基板先完成高温制程再进行键合。
步骤S4中后续晶圆制程包括晶圆正面制程和晶圆背面制程。
晶圆正面制程完成后在化合物半导体基板正面暂时键合玻璃载板,去除硅基载板并完成化合物半导体基板背面减薄后再进行晶圆背面制程。
在本说明书的描述中,参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (6)
1.一种化合物半导体基板与硅基载板永久键合方法,其特征在于,包括以下步骤:
S1、将硅基载板和化合物半导体基板清洗干净并去除自然氧化层,通过电浆对硅基载板表面处理,激发硅基载板原子活性键;
S2、按照设计图案将化合物半导体基板水平排列键合在硅基载板表面;
S3、将放置好化合物半导体基板的硅基载板放入高温炉管中进行高温回火,使化合物半导体基板与硅基载板形成永久键合结构;
S4、将与硅基载板键合后的化合物半导体基板进行后续晶圆制程。
2.根据权利要求1所述的化合物半导体基板与硅基载板永久键合方法,其特征在于,所述化合物半导体基板包括砷化镓基板、氮化镓基板和碳化硅基板,所述化合物半导体基板为碳化硅基板时先完成高温制程再进行永久键合硅基载板。
3.根据权利要求1所述的化合物半导体基板与硅基载板永久键合方法,其特征在于,所述步骤S2中高温回火的温度为800-1400℃,高温炉管的升温速率小于15℃/min。
4.根据权利要求1所述的化合物半导体基板与硅基载板永久键合方法,其特征在于,所述步骤S3中化合物半导体基板和硅基载板永久键合后厚度小于1500μm,所述硅基载板直径大于化合物半导体基板直径。
5.根据权利要求1所述的化合物半导体基板与硅基载板永久键合方法,其特征在于,所述步骤S4中后续晶圆制程包括晶圆正面制程和晶圆背面制程。
6.根据权利要求5所述的化合物半导体基板与硅基载板永久键合方法,其特征在于,所述晶圆正面制程完成后在化合物半导体基板正面暂时键合玻璃载板,去除硅基载板并完成化合物半导体基板背面减薄后再进行晶圆背面制程。
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