JP2005534510A5 - - Google Patents

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Publication number
JP2005534510A5
JP2005534510A5 JP2004525975A JP2004525975A JP2005534510A5 JP 2005534510 A5 JP2005534510 A5 JP 2005534510A5 JP 2004525975 A JP2004525975 A JP 2004525975A JP 2004525975 A JP2004525975 A JP 2004525975A JP 2005534510 A5 JP2005534510 A5 JP 2005534510A5
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JP
Japan
Prior art keywords
silicon
forming
structural element
deposited
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004525975A
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English (en)
Japanese (ja)
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JP2005534510A (ja
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Publication date
Priority claimed from US10/210,315 external-priority patent/US6770569B2/en
Application filed filed Critical
Publication of JP2005534510A publication Critical patent/JP2005534510A/ja
Publication of JP2005534510A5 publication Critical patent/JP2005534510A5/ja
Withdrawn legal-status Critical Current

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JP2004525975A 2002-08-01 2003-05-13 低温プラズマによるＭＥＭＳ用途向けシリコン（Ｓｉ）又はシリコンゲルマニウム（ＳｉＧｅ） Withdrawn JP2005534510A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/210,315 US6770569B2 (en) 2002-08-01 2002-08-01 Low temperature plasma Si or SiGe for MEMS applications
PCT/US2003/014930 WO2004013039A2 (en) 2002-08-01 2003-05-13 Low temperature plasma si or sige for mems applications

Publications (2)

Publication Number Publication Date
JP2005534510A JP2005534510A (ja) 2005-11-17
JP2005534510A5 true JP2005534510A5 (enExample) 2006-07-13

Family

ID=31187279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004525975A Withdrawn JP2005534510A (ja) 2002-08-01 2003-05-13 低温プラズマによるＭＥＭＳ用途向けシリコン（Ｓｉ）又はシリコンゲルマニウム（ＳｉＧｅ）

Country Status (6)

Country Link
US (1) US6770569B2 (enExample)
JP (1) JP2005534510A (enExample)
KR (1) KR20050026078A (enExample)
CN (1) CN1675126A (enExample)
AU (1) AU2003229041A1 (enExample)
WO (1) WO2004013039A2 (enExample)

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EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US7071017B2 (en) * 2003-08-01 2006-07-04 Yamaha Corporation Micro structure with interlock configuration
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7288464B2 (en) * 2005-04-11 2007-10-30 Hewlett-Packard Development Company, L.P. MEMS packaging structure and methods
US20060234412A1 (en) * 2005-04-19 2006-10-19 Hewlett-Packard Development Company, L.P. Intellectual Property Administration MEMS release methods
US7678601B2 (en) * 2006-01-20 2010-03-16 Texas Instruments Incorporated Method of forming an acceleration sensor
US7642114B2 (en) * 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
JP4561813B2 (ja) 2007-11-09 2010-10-13 セイコーエプソン株式会社 アクティブマトリクス装置、電気光学表示装置、および電子機器
KR100959454B1 (ko) * 2007-12-10 2010-05-25 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
WO2009079780A1 (en) * 2007-12-21 2009-07-02 The Royal Institution For The Advancement Of Learning/Mcgill University Low temperature ceramic microelectromechanical structures
WO2009111874A1 (en) * 2008-03-11 2009-09-17 The Royal Institution For The Advancement Of Learning/ Mcgiil University Low-temperature wafer level processing for mems devices
WO2010003228A1 (en) * 2008-07-09 2010-01-14 The Royal Institution For The Advancement Of Learning/Mcgiii University Low temperature ceramic microelectromechanical structures
CN101393321B (zh) * 2008-10-09 2010-06-02 重庆大学 光栅光调制器与有源矩阵驱动电路单片集成方法
FR2953819A1 (fr) * 2009-12-15 2011-06-17 Commissariat Energie Atomique Procede de fabrication d'un composant electronique associant un systeme electromecanique et un circuit electronique.
CN102336388B (zh) * 2010-07-22 2014-04-16 上海华虹宏力半导体制造有限公司 压敏传感器的制备方法
US8567246B2 (en) 2010-10-12 2013-10-29 Invensense, Inc. Integrated MEMS device and method of use
US8860409B2 (en) 2011-01-11 2014-10-14 Invensense, Inc. Micromachined resonant magnetic field sensors
US9664750B2 (en) 2011-01-11 2017-05-30 Invensense, Inc. In-plane sensing Lorentz force magnetometer
US8947081B2 (en) 2011-01-11 2015-02-03 Invensense, Inc. Micromachined resonant magnetic field sensors
US8686555B2 (en) * 2011-06-29 2014-04-01 Invensense, Inc. Integrated heater on MEMS cap for wafer scale packaged MEMS sensors
WO2013046283A1 (ja) * 2011-09-30 2013-04-04 富士通株式会社 可動部を有する電気機器とその製造方法
JP5751206B2 (ja) 2011-10-21 2015-07-22 株式会社豊田中央研究所 光偏向装置
WO2013076755A1 (ja) * 2011-11-22 2013-05-30 パイオニア株式会社 静電アクチュエーター、可変容量コンデンサーおよび電気スイッチ
CN102515089B (zh) * 2011-12-21 2014-10-15 北京大学 一种mems集成化方法
CN102616731B (zh) * 2012-03-27 2016-02-03 上海华虹宏力半导体制造有限公司 Mems器件的制造方法
KR101471190B1 (ko) * 2012-12-31 2014-12-11 한국과학기술원 멤즈 구조체의 제조 방법
CN104501983B (zh) * 2015-01-08 2017-03-22 上海新微技术研发中心有限公司 一种褶皱膜温度传感器及其制作方法
CN107408516A (zh) 2015-02-11 2017-11-28 应美盛股份有限公司 使用Al‑Ge共晶接合连接组件的3D集成
US10192850B1 (en) 2016-09-19 2019-01-29 Sitime Corporation Bonding process with inhibited oxide formation
CN108584864B (zh) * 2018-04-16 2019-08-09 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
US11314210B2 (en) * 2018-08-01 2022-04-26 Nutech Ventures Neuromorphic computing using electrostatic mems devices
CN110504435B (zh) * 2019-08-30 2021-06-04 石家庄尚太科技股份有限公司 一种低温等离子体制备硅碳复合负极材料的方法
CN110713169B (zh) * 2019-10-21 2023-02-14 中北大学 一种提高射频mems开关中聚酰亚胺牺牲层平整度的方法

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US5552994A (en) * 1992-09-23 1996-09-03 Onkor, Ltd. System for printing social expression cards in response to electronically transmitted orders
CA2154357C (en) * 1993-02-04 2004-03-02 Kevin A. Shaw Microstructures and single-mask, single-crystal process for fabrication thereof
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
WO1996016203A1 (de) 1994-11-22 1996-05-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur herstellung mikromechanischer bauelemente mit freistehenden mikrostrukturen oder membranen
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
US6210988B1 (en) * 1999-01-15 2001-04-03 The Regents Of The University Of California Polycrystalline silicon germanium films for forming micro-electromechanical systems
US6069540A (en) * 1999-04-23 2000-05-30 Trw Inc. Micro-electro system (MEMS) switch
ATE440378T1 (de) * 2000-04-05 2009-09-15 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
US6635506B2 (en) * 2001-11-07 2003-10-21 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US6701779B2 (en) * 2002-03-21 2004-03-09 International Business Machines Corporation Perpendicular torsion micro-electromechanical switch

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